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Anode modification method of perovskite solar cell

A solar cell and anode modification technology, applied in the direction of circuits, photovoltaic power generation, electrical components, etc., can solve the problems of blocked lateral transport of carriers, reduced battery output power, and reduced short-circuit current, so as to improve photoelectric conversion efficiency and improve device performance. Stability, effect of increasing current and voltage

Pending Publication Date: 2020-08-14
ZHEJIANG ZHENENG TECHN RES INST
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the currently reported high-efficiency (>22%) perovskite solar cells all adopt a positive structure. For the positive structure, the work function of the anode electrode material needs to be higher than the Fermi level of the hole transport material, which is higher. The work function of the perovskite battery can better match the energy level of the hole transport layer, otherwise the Schottky barrier will be generated, which will reduce the fill factor and photoelectric conversion efficiency of the battery. important direction of performance
[0003] Specifically, gold has a high work function (5.1eV) but is expensive, while electrode materials such as carbon (5eV) and nickel (5.15eV) have optical parasitic absorption that reduces short-circuit current and poor conductivity, resulting in current-carrying Problems such as the sub-transverse transmission is hindered to reduce the fill factor
Silver (4.26eV) is widely used in commercial silicon solar cells. It has high reflectivity and conductivity, but its low work function will create a Schottky barrier with hole transport materials, which will greatly reduce the output of the cell. power, and the silver and the halogen elements in the perovskite form silver halide, which reduces the stability of the battery

Method used

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  • Anode modification method of perovskite solar cell
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  • Anode modification method of perovskite solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036]1) Prepare an electron transport layer (TiO 2 , SnO 2 , ZnO, PCBM, C 60 , Nb 2 o 5 , SrTiO 3 , ICBA, ICTA), thickness of 50 ~ 1500nm perovskite film (ABX 3 , where A is MA (methylamine), FA (formamidine), 5-AVA (5-ammonium isovalerate) or C S and combinations thereof, B is Cu, Ni, Fe, Co, Mn, Cr, Cd, Sn, Pb, Pd, Ge, Eu or Yb and combinations thereof, X is I, Br or Cl or combinations thereof), the thickness is 1~ 300nm hole transport layer (spiro-OMeTAD, NiO x , CuI, CuSCN, NiO x , PEDOT:PSS, CuCSN, Graphene oxide, Cu 2 O, CuO, CuCaO 2 , P3HT, VO x ).

[0037] 2) On the battery that has prepared the hole transport layer, use a vacuum thermal evaporation coating machine with multiple evaporation sources to prepare the halide modification layer and the metal silver electrode. The halide evaporation source is a single halide powder with a purity higher than 99% or blocks. Before starting evaporation, the chamber vacuum is lower than 6×10 -4 Pa, adjust the curre...

Embodiment 2

[0039] 1) Prepare an electron transport layer (TiO 2 , SnO 2 , ZnO, PCBM, C 60 , Nb 2 o 5 , SrTiO 3 , ICBA, ICTA), thickness of 50 ~ 1500nm perovskite film (ABX 3 , where A is MA (methylamine), FA (formamidine), 5-AVA (5-ammonium isovalerate) or C S and combinations thereof, B is Cu, Ni, Fe, Co, Mn, Cr, Cd, Sn, Pb, Pd, Ge, Eu or Yb and combinations thereof, X is I, Br or Cl or combinations thereof), the thickness is 1~ 300nm hole transport layer (spiro-OMeTAD, NiO x , CuI, CuSCN, NiO x , PEDOT:PSS, CuCSN, Graphene oxide, Cu 2 O, CuO, CuCaO 2 , P3HT, VO x ).

[0040] 2) Use a vacuum thermal evaporation coating machine with multiple evaporation sources to prepare a halide modification layer and a metal silver electrode on the battery that has prepared a hole transport layer. The halide evaporation source is two or more halides with a purity higher than 99%. Mixed powder or block. Before starting evaporation, the chamber vacuum is lower than 6×10 -4 Pa, adjust the c...

Embodiment 3

[0042] 1) Prepare an electron transport layer (TiO 2 , SnO 2 , ZnO, PCBM, C 60 , Nb 2 o 5 , SrTiO 3 , ICBA, ICTA), thickness of 50 ~ 1500nm perovskite film (ABX 3 , where A is MA (methylamine), FA (formamidine), 5-AVA (5-ammonium isovalerate) or C S and combinations thereof, B is Cu, Ni, Fe, Co, Mn, Cr, Cd, Sn, Pb, Pd, Ge, Eu or Yb and combinations thereof, X is I, Br or Cl or combinations thereof), the thickness is 1~ 300nm hole transport layer (spiro-OMeTAD, NiO x , CuI, CuSCN, NiO x , PEDOT:PSS, CuCSN, Graphene oxide, Cu 2 O, CuO, CuCaO 2 , P3HT, VO x ).

[0043] 2) Use a vacuum thermal evaporation coating machine with multiple evaporation sources to prepare a halide modification layer and a metal silver electrode on the battery that has prepared a hole transport layer. The halide evaporation source is two or more halides with a purity higher than 99%. The powder or block of the substance is placed in two or more heating boats respectively. Before starting evap...

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Abstract

The invention relates to an anode modification method of a perovskite solar cell. The anode modification method comprises the following steps: S1, cleaning transparent conductive glass; and S2, preparing an electron transport layer in the thickness of 1-300nm on the transparent conductive glass. The anode modification method has the advantages that the problems of mismatching of work functions andshort service life of back electrode materials such as silver and the like in the perovskite solar cell with a positive structure are solved, the current and the voltage of the cell under a working condition are improved, the photoelectric conversion efficiency is improved, and high efficiency of the perovskite cell adopting the back electrode materials such as the silver and the like is realized; and reaction between halogen of perovskite and the silver electrode is blocked, the stability of the device is improved, and the service life of the battery is prolonged. Process optimization is carried out aiming at the problems of material, thickness, preparation method and the like of the insertion layer; the method is compatible with an original cell preparation process, the efficiency of the perovskite solar cell is improved, the production cost is reduced, and the commercialization of the perovskite solar cell is promoted.

Description

technical field [0001] The invention relates to the field of anode modification of solar cells, and particularly includes a method for modifying the anode of a perovskite solar cell. Background technique [0002] Perovskite materials have unique photoelectric properties, and the certified efficiency of perovskite solar cells using organic-inorganic hybrid perovskite as the light absorbing layer has exceeded 25%. Interface modification is widely used to improve the performance and stability of batteries. For example, patents CN201611152609.6, CN201810414629.9, CN201810151334.7 and CN201810047126.2 introduced the modification methods for the cathode or anode of perovskite solar cells with inverted structure. However, the currently reported high-efficiency (>22%) perovskite solar cells all adopt a positive structure. For the positive structure, the work function of the anode electrode material needs to be higher than the Fermi level of the hole transport material, which is h...

Claims

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Application Information

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IPC IPC(8): H01L51/48H01L51/44
CPCH10K71/00H10K30/82Y02E10/549Y02P70/50
Inventor 寿春晖盛江杨伟创丁莞尔黄绵吉张永强闫宝杰叶继春
Owner ZHEJIANG ZHENENG TECHN RES INST
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