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Method for improving corrosion resistance of hole absorption layer of perovskite solar cell

A solar cell, corrosion-resistant technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of reduced battery life, corrosion of the conduction layer, and reduced carrier conductivity of the hole transport layer and the absorption layer, etc. The effect of improving quality, good stability, good stability and mobility

Active Publication Date: 2020-09-01
山西绿能光电科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] According to the above, the hole conduction layer used in perovskite solar cells in the existing schemes is mostly lithium and magnesium heavily doped nickel oxide, and the conduction layer will be corroded after absorbing water or being oxidized to produce HI, thereby reducing the The carrier conduction ability between the hole transport layer and the absorption layer is reduced, so that the life of the battery is reduced. The present invention proposes a method for improving the corrosion resistance of the hole absorption layer of the perovskite solar cell, which can effectively solve the above technical problems. question

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] (1) First use nano-diamond powder to ultrasonically grind the substrate to make the surface of the substrate have a large roughness, and prepare the processed substrate; the substrate is an ITO substrate; the ultrasonic frequency of ultrasonic grinding is 36kHz, and the time is 1.5h;

[0028] (2) Put the treated substrate obtained in step (1) into the reaction chamber first, and then use the hot wire chemical vapor deposition process to deposit boron-doped diamond film on the substrate, and then use inert gas to clean the chamber after the deposition is completed , to obtain a substrate for depositing a boron-doped diamond film; the parameters of the hot wire chemical vapor deposition process are: the distance from the hot wire to the substrate is 7mm, the temperature of the hot wire is 2300°C, the temperature of the substrate is 460°C, and the carbon source concentration is 1.4% , the reaction pressure is 0.4kPa; the boron doping method is solid boron source doping, the...

Embodiment 2

[0032] (1) First, use nano-diamond powder to ultrasonically grind the substrate to make the surface of the substrate have a large roughness, and prepare the processed substrate; the substrate is an FTO substrate; the ultrasonic frequency of ultrasonic grinding is 32kHz, and the time is 2h;

[0033] (2) Put the treated substrate obtained in step (1) into the reaction chamber first, and then use the hot wire chemical vapor deposition process to deposit boron-doped diamond film on the substrate, and then use inert gas to clean the chamber after the deposition is completed , to obtain a substrate for depositing a boron-doped diamond film; the parameters of the hot wire chemical vapor deposition process are: the distance from the hot wire to the substrate is 6mm, the temperature of the hot wire is 2300°C, the temperature of the substrate is 420°C, and the carbon source concentration is 1.8% , the reaction pressure is 0.3kPa; the boron doping method is liquid boron source doping, the...

Embodiment 3

[0037] (1) First use nano-diamond powder to ultrasonically grind the substrate to make the surface of the substrate have a large roughness, and prepare the processed substrate; the substrate is an ITO substrate; the ultrasonic frequency of ultrasonic grinding is 38kHz, and the time is 1h;

[0038] (2) Put the treated substrate obtained in step (1) into the reaction chamber first, and then use the hot wire chemical vapor deposition process to deposit boron-doped diamond film on the substrate, and then use inert gas to clean the chamber after the deposition is completed , to obtain a substrate for depositing a boron-doped diamond film; the parameters of the hot wire chemical vapor deposition process are: the distance from the hot wire to the substrate is 8mm, the temperature of the hot wire is 2400°C, the temperature of the substrate is 480°C, and the carbon source concentration is 1.2% , the reaction pressure is 0.5kPa; the boron doping method is gas boron source doping, the dop...

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Abstract

The invention relates to the field of perovskite solar cells, and discloses a method for improving the corrosion resistance of a hole absorption layer of a perovskite solar cell. The preparation method comprises the following preparation processes of (1) carrying out ultrasonic grinding treatment on a substrate by utilizing nano diamond powder to obtain a treated substrate; (2) depositing a boron-doped diamond film on the substrate by utilizing a hot filament method chemical vapor deposition process; and (3) mixing methylamine iodine and lead iodide in a DMF solvent to prepare a perovskite precursor, spin-coating the perovskite precursor on the surface of the substrate after being cooled, and carrying out annealing treatment to obtain a P-I layer, so that the improvement of the corrosion resistance of the perovskite solar cell hole absorption layer is realized. The boron-doped diamond film is deposited on the surface of the substrate to serve as the hole transport layer, so that the corrosion resistance is good, the carrier conduction capacity between the hole transport layer and the absorption layer is high, and the service life of the PSC is prolonged. The P-I layer is directly obtained by a one-step synthesis process, so that the production process is simplified, and the popularization and application are facilitated.

Description

technical field [0001] The invention relates to the field of perovskite solar cells, and discloses a method for improving the corrosion resistance of a hole absorption layer of the perovskite solar cell. Background technique [0002] With the increasing awareness of environmental protection and the crisis of energy depletion in the future, the recycling of renewable energy has become an increasingly important demand in today's society, and the use of solar energy is the first to bear the brunt. Since the photovoltaic industry entered the market at the beginning of the 21st century, the conversion efficiency of solar cells has increased to over 20%. Halide perovskite solar cells (PSCs) are favored. Compared with the second-generation thin-film solar cells, PSC has a wider absorption spectrum, higher carrier mobility, lower cost and simpler production methods. The highest photoelectric conversion efficiency reported so far has reached 23.3%. [0003] The working principle of...

Claims

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Application Information

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IPC IPC(8): H01L51/48H01L51/46H01L51/42C01B32/26
CPCC01B32/26H10K71/00H10K71/30H10K30/40H10K2102/00Y02E10/549Y02P70/50
Inventor 陈庆廖健淞杨洁陈涛白涛
Owner 山西绿能光电科技有限公司
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