Perovskite solar cell capable of regulating and controlling growth of lead iodide passivation layer and preparation method
A solar cell and perovskite technology, applied in the field of solar cells, can solve the problems of poor quality of lead iodide film, imperfect passivation defects, poor quality of perovskite film, etc. The effect of stability and quality improvement
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[0030] The invention provides a method for preparing a perovskite solar cell capable of regulating and controlling the growth of a lead iodide passivation layer, comprising the following steps:
[0031] S1: Clean the surface of the transparent conductive substrate 1, and dry it with dry nitrogen after cleaning; preferably, the surface roughness of the transparent conductive substrate 1 is less than 1 nm, and the cleaning method is ultrasonic cleaning;
[0032] S2: Spin-coat the electron transport layer 2 on the surface of the transparent conductive substrate 1;
[0033] S3: Treat the transparent conductive substrate 1 with the electron transport layer 2 with ultraviolet and ozone for 5 minutes to 30 minutes;
[0034]S4: Prepare the lead iodide colloid in a nitrogen environment, then add ligands to the lead iodide colloid, and stir;
[0035] S5: Spin-coat the reagent prepared in S4 on the electron transport layer 2 in a nitrogen environment, and perform annealing and crystalli...
Embodiment 1
[0050] Choose ITO as transparent conductive substrate, SnO 2 As an electron transport layer, (FAPbI 3 ) 1-x (MAPbBr 3 ) x As a perovskite light-absorbing layer, Spiro-OMeTAD is used as a hole transport layer material, choline chloride is used as a ligand material, and metal Ag electrodes are prepared by thermal evaporation.
[0051] The preparation method is as follows:
[0052] S1: Cleaning of the conductive substrate: ultrasonically clean the cut ITO conductive glass substrate in acetone, isopropanol and ethanol for 30 minutes each, and then blow dry with nitrogen flow;
[0053] S2: Preparation of electron transport layer: UV ozone treatment was performed on the ITO conductive glass substrate for 15 minutes, and a layer of SnO was deposited on the cleaned ITO surface by spin coating 2 To make the electron transport layer, anneal at 150°C for 30 minutes. After the annealing is completed, treat the conductive substrate with the electron transport layer prepared by ultravi...
Embodiment 2
[0060] Such as figure 1 As shown, choose ITO as the transparent conductive substrate, SnO 2 As an electron transport layer, FAPbI 3 As a perovskite light-absorbing layer, Spiro-OMeTAD is used as a hole transport layer material, PEAI is used as a ligand material, and metal Ag electrodes are prepared by thermal evaporation.
[0061] The preparation method is as follows:
[0062] S1~S2 steps are similar to S1~S2 in embodiment 1;
[0063] S3: In a nitrogen atmosphere, add 0.6 g of lead iodide crystals mainly with (101) crystal planes to 1 mL of a mixed solution of dimethylformamide and dimethyl sulfoxide with a volume ratio of 9:1. Stir at high temperature for 240min to form lead iodide colloid, then add 0.001g of PEAI to the lead iodide colloid, and stir at 80°C for 240min;
[0064] S4: In a 99.9% nitrogen environment, the reagent prepared in S3 was spin-coated at 1500 rpm, and annealed and crystallized at 70° C. for 10 seconds to form a lead iodide film on the electron trans...
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