High-selectivity bulk acoustic wave resonance hydrogen sensor and preparation method thereof
A bulk acoustic wave resonator, high selectivity technology, applied in the use of sound waves/ultrasonic waves/infrasonic waves to analyze fluids, use sound waves/ultrasonic waves/infrasonic waves for material analysis, instruments, etc. It can solve the problems of poor hydrogen selectivity, high temperature requirements, slow response, etc. problems, to achieve the effect of easy access, improved accuracy, and fast response
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[0040] see figure 2 , image 3 , Figure 4 , Figure 5 , Figure 6 , Figure 7 , Figure 8 , Figure 9 and Figure 10 , the present invention also provides a method for preparing a highly selective bulk acoustic resonance hydrogen sensor, the preparation method mainly comprising the following steps:
[0041] Step 1, preparing a bulk acoustic wave resonator, specifically includes the following sub-steps:
[0042] (11) A substrate is provided, and a cavity structure is prepared on the substrate.
[0043] (12) Prepare the lower electrode bottom layer on the substrate.
[0044] (13) Prepare a piezoelectric layer on the sample obtained in step (12).
[0045] (14) Prepare the lead post of the lower electrode layer and the top layer of the lower electrode on the piezoelectric layer, thereby obtaining the lower electrode layer.
[0046] (15) An upper electrode layer is prepared on the piezoelectric layer, thereby obtaining a bulk acoustic wave resonator.
[0047] Step 2, ...
Embodiment 1
[0052] The preparation method of the selective acoustic wave resonance hydrogen sensor provided in Embodiment 1 of the present invention mainly includes the following steps:
[0053] (1) Choose a suitable size, single-side polished, 300nm thick silicon wafer as the substrate, clean the surface of the substrate according to the RCA cleaning process, spin-coat NR7 photoresist on the surface of the substrate, and apply it on the substrate by photolithography Obtain the cavity structure pattern, wash away the photoresist inside the pattern, to form cavity structure pattern grooves on the surface photoresist;
[0054] (2) Etching the surface of the above-mentioned sample by reactive ion etching, forming a groove with a cavity pattern structure on the substrate, the depth of which is 400nm;
[0055] (3) Place the above sample in acetone and soak for 15min to remove the surface photoresist;
[0056] (4) Coating a layer of SiO on the surface of the above sample by electron beam evapo...
Embodiment 2
[0076] The preparation method of the high-selectivity bulk acoustic resonance hydrogen sensor provided in Example 2 of the present invention is basically the same as the preparation method of the high-selectivity bulk acoustic resonance hydrogen sensor provided in Example 1 of the present invention, so in the preparation steps of Example 2, only The processes, methods and parameters, etc. that are different from those in the preparation steps of Example 1 are mentioned, and those that are not given are the same as those in Example 1 by default. The different processes are specifically:
[0077] Step (7) Depositing a layer of Al thin film on the surface of the sample by electron beam evaporation coating process, the thickness of the Al thin film is 100nm;
[0078] Step (10) using a magnetron sputtering coating process using a high-purity aluminum nitride target and introducing high-purity Ar 2 Carry out sputtering, laminate a layer of AlN thin film on the sample surface, the t...
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Abstract
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