De-winding plating method for TOPCon battery and preparation method of TOPCon battery

A wrapping and battery technology, applied in the field of solar cells, can solve problems such as increasing costs, increasing equipment, increasing cleaning processes, etc., to improve open-circuit voltage and short-circuit current, ensure fluidity and uniformity, and increase water film protection. Effect

Active Publication Date: 2021-02-09
YINGLI ENERGY CHINA +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When using a phosphosilicate glass layer as a mask, use HF and HNO 3 Mixing acid solution for dewinding plating, the acid solution will directly overflow the boron-diffused silicon wafer, it is difficult to control the complete retention of the front borosilicate glass layer, the process window is narrow, and the silicon wafer is at risk of being damaged, affecting the final efficiency
When SiON or SiNx is used as a mask on the back of the silicon wafer, pickling and dewinding plating can be used for dewinding plating, but the process of plating mask and post-mask cleaning is added, which requires additional equipment and higher costs, and is more expensive than conventional N-type single The order of the crystal double-sided cell manufacturing process is relatively chaotic
When using spin coating as a mask, it can be removed with mixed acid solution, but it is easy to introduce new metal ions, and the removal of metal ions is not clean, resulting in low efficiency
In addition, when using inorganic alkali (KOH / NaOH) to remove the polysilicon coated on the front side of the silicon wafer, the reaction rate is too fast to control the removal effect, and the requirements for the coating process of the silicon wafer are relatively high, and the chemicals are easy to damage the P+ layer. The process window is very narrow, and the good rate of the product fluctuates greatly

Method used

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  • De-winding plating method for TOPCon battery and preparation method of TOPCon battery
  • De-winding plating method for TOPCon battery and preparation method of TOPCon battery
  • De-winding plating method for TOPCon battery and preparation method of TOPCon battery

Examples

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preparation example Construction

[0036] Adopt the above-mentioned dewinding plating method for TOPCon battery to prepare the preparation method of TOPCon battery and comprise the steps:

[0037] Front-side boron doping of single crystal N-type raw silicon wafers after texturing; using HF / HNO 3 Mix acid solution to etch and polish the back and edge of the silicon wafer; use alkaline solution for secondary polishing; deposit tunnel oxide layer and polysilicon layer (Poly-Si); do phosphorus doping (PSG) on the back; remove front winding coating; removal of glass layers (BSG and PSG); deposition of aluminum oxide (Al 2 o 3 ); silicon nitride double-sided coating (N x o y ), wherein the thickness of the silicon nitride film is 70-90nm on the front side and 50-70nm on the back side; printing and sintering test. The schematic diagram of the specific preparation process is as follows: figure 1 shown.

Embodiment 1

[0040] A kind of method for going around plating of TOPCon battery, comprises the steps:

[0041] S1, Texturing a single crystal N-type silicon wafer of 156.75mm×156.75mm, performing boron diffusion doping on the front side of the silicon wafer after texturing, and phosphorus doping after depositing a tunneling oxide layer and a polysilicon layer on the backside;

[0042] S2, using a shower nozzle with a water volume of 150mL / min, spraying a water film layer on the back of the phosphorus-doped silicon wafer, using a chain pickling equipment, and using a roller to transport the single side of the silicon wafer to immerse in hydrogen with a concentration of 49% In the hydrofluoric acid solution, soak the front side of the silicon wafer in the hydrofluoric acid solution for 2 minutes to remove the phosphorous around the front and side plating;

[0043] S3, put the silicon wafer obtained in step S2 into KOH solution or NaOH solution containing additives, soak at 60°C for 5 minutes...

Embodiment 2

[0048] A kind of method for going around plating of TOPCon battery, comprises the steps:

[0049] S1, Texturing a single crystal N-type silicon wafer of 156.75mm×156.75mm, performing boron diffusion doping on the front side of the silicon wafer after texturing, and phosphorus doping after depositing a tunneling oxide layer and a polysilicon layer on the backside;

[0050] S2, using a shower nozzle with a water volume of 50mL / min, spraying a water film layer on the back of the phosphorus-doped silicon wafer, using chain pickling equipment, and using a roller to transport the silicon wafer on one side and immersing it in hydrogen with a concentration of 40% In the hydrofluoric acid solution, soak the front side of the silicon wafer in the hydrofluoric acid solution for 3 minutes to remove the phosphorous around the front and side plating;

[0051] S3, put the silicon wafer obtained in step S2 into a KOH solution containing additives, soak at 55°C for 10 minutes, remove the polys...

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Abstract

The invention relates to the technical field of solar cells, and particularly discloses a winding and plating removing method for a TOPCon cell and a preparation method of the TOPCon cell. The methodcomprises the following steps: manufacturing a water film on the back surface of a phosphorus-doped silicon wafer, and removing phosphorus-doped layers wound and plated on the front surface and the side surface by using a hydrofluoric acid solution; soaking the obtained silicon wafer in a KOH solution or NaOH solution containing an additive, removing polycrystalline silicon on the front surface ofthe silicon wafer, taking out the silicon wafer, and washing with water; placing the obtained silicon wafer in a KOH or NaOH and H2O2 mixed solution to be soaked and then placing the silicon wafer ina hydrochloric acid solution to be soaked after washing, taking out the silicon wafer to be washed, completing the soaking treatment in a corresponding reaction tank, and arranging two sets of circulating bubbling systems in the reaction tank. According to the winding-plating-removing method provided by the invention, the winding plating phenomenon of the TOPCon battery can be effectively solved,the excellent rate of products is ensured, the appearance problem and EL disqualification problem caused by winding plating are solved, and the battery conversion efficiency is improved.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a dewinding plating method for TOPCon batteries and a preparation method for TOPCon batteries. Background technique [0002] TOPCon technology is to prepare an ultra-thin tunnel oxide layer and a thin layer of highly doped polysilicon on the back of the battery, which together form a passivation contact structure. In the manufacturing process of N-type single-crystal double-sided cells, two diffusions are required, and a mask process is used. If there is a mask, the coating must be wound. One of the biggest difficulties in the process is to remove the polysilicon layer and doped phosphorus layer on the front side. Improper cleaning will lead to over-polishing or unclean cleaning in the doped area, obvious color difference after coating, and poor passivation effect. , which is not conducive to the absorption of light and leads to a decrease in fill factor, which eventually le...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/308H01L21/306H01L31/18
CPCH01L31/1804H01L21/30604H01L21/3081H01L21/3085H01L21/3086Y02E10/547Y02P70/50
Inventor 汤欢郭宝军王静赵学玲王平马红娜郎芳史金超李锋张伟王子谦翟金叶潘明翠王红芳徐卓王丙宽张文辉
Owner YINGLI ENERGY CHINA
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