Ultra-light C/C-SiC space reflector and preparation method and application thereof
A mirror, ultra-light technology, applied in the field of chemical materials, can solve the problems of large surface roughness, no successful application, etc., to achieve good quality, improve anti-oxidation and thermal shock resistance, and reduce cracks.
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Embodiment 1
[0050]Such asfigure 1 As shown, this embodiment discloses an ultra-lightweight C / C-SiC space mirror, including a C / C composite material, a SiC gradient transition layer embedded on the surface of the C / C composite material, and a SiC gradient transition layer. The graphene-SiCNWs multi-dimensional hybrid enhanced CVD-SiC coating on the surface of the layer; the SiC gradient transition layer is abbreviated as PC-SiC, and the graphene-SiCNWs multi-dimensional hybrid enhanced CVD-SiC coating is abbreviated as G-SiCNWs- SiC, the graphene is abbreviated as G, and the SiCNWs are SiC nanowires.
[0051]This embodiment also discloses a method for preparing an ultra-lightweight C / C-SiC space mirror, which includes the following steps:
[0052](1) SiC gradient transition layer embedding method can be controlled
[0053]Take C powder and Si powder as main raw materials, add a small amount of Al2O3Permeation enhancer and ferrocene modifier, which are mixed powders, are embedded in the C / C composite mate...
Embodiment 2
[0070]An ultra-lightweight C / C-SiC space mirror, including C / C composite material, SiC gradient transition layer embedded on the surface of the C / C composite material, and graphene-SiCNWs multidimensional arranged on the surface of the SiC gradient transition layer Hybrid enhanced CVD-SiC coating; the SiC gradient transition layer is abbreviated as PC-SiC, the graphene-SiCNWs multi-dimensional hybrid enhanced CVD-SiC coating is abbreviated as G-SiCNWs-SiC, and the graphene is abbreviated as G, the SiCNWs are SiC nanowires.
[0071]The content of silicon in the SiC gradient transition layer gradually increases from the inside of the C / C composite material to the outer surface of the G-SiCNWs-SiC.
[0072]A preparation method of ultra-lightweight C / C-SiC space mirror includes the following steps:
[0073]S1, the embedding method can control the preparation of SiC gradient transition layer:
[0074]Embed the sample of C / C composite material in the mixed powder, the mixed powder includes C powder, ...
Embodiment 3
[0083]The difference between this embodiment and Embodiment 2 is only:
[0084]A preparation method of ultra-lightweight C / C-SiC space mirror includes the following steps:
[0085]S1, the embedding method can control the preparation of SiC gradient transition layer:
[0086]Embed the sample of C / C composite material in the mixed powder, the mixed powder includes C powder, Si powder, MgO penetration enhancer and ferrocene modifier; the mass ratio of C powder and Si powder is 3:1 , MgO penetration enhancer accounts for 8% by mass in the mixed powder, and ferrocene modifier accounts for 10% by mass in the mixed powder; after embedding, it is heated and reacted at a temperature of 2300°C for 3 hours to obtain a uniform structure SiC gradient transition layer, namely PC-SiC;
[0087]S2, G-SiCNWs can be prepared on the surface of PC-SiC:
[0088]Place the PC-SiC in the reaction zone of the CVD furnace, and then pass in H after vacuuming2And Ar, when the temperature of the reaction zone reaches the depos...
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