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Texturing method for pretreating surface of monocrystalline silicon wafer by adopting electrochemical method

A single crystal silicon wafer, pretreatment technology, applied in chemical instruments and methods, after treatment, single crystal growth, etc., can solve the problems of increased battery production costs, high transportation and storage requirements, and large hydrogen peroxide consumption. Achieve the effect of simple structure, high transportation and storage costs, and avoid secondary pollution

Active Publication Date: 2021-06-04
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, hydrogen peroxide is a dangerous corrosive drug, chemically unstable and easily decomposed, and can react with combustibles to release a large amount of heat and oxygen, causing fire and explosion
In the actual solar cell manufacturing process, the consumption of hydrogen peroxide used for texturing is relatively large. The concentration of hydrogen peroxide on the market is mostly 30%-35% high-concentration products, which are highly corrosive and have a high risk factor. If not leaked or handled improperly It will cause great harm to the environment, which also leads to high requirements for its transportation and storage, resulting in a significant increase in the cost of battery preparation, so it is very necessary to replace hydrogen peroxide

Method used

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  • Texturing method for pretreating surface of monocrystalline silicon wafer by adopting electrochemical method
  • Texturing method for pretreating surface of monocrystalline silicon wafer by adopting electrochemical method
  • Texturing method for pretreating surface of monocrystalline silicon wafer by adopting electrochemical method

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Embodiment 1

[0033] The method for making texturing on the surface of a monocrystalline silicon wafer by the electrochemical method of the present embodiment specifically comprises the following steps:

[0034] (1) Immerse the solar monocrystalline silicon wafer in absolute ethanol, and ultrasonically clean it at 45-50°C for 5 minutes to remove impurities and organic pollution on the surface of the silicon wafer. Then take out the silicon chip, wash it with deionized water and dry it, then immerse it in the NaOH aqueous solution with a mass fraction of 10%, and soak it for 10 minutes at 85°C to remove the damaged layer on the surface of the silicon chip, then take out the silicon chip and wash it with deionized water And tumble dry.

[0035] (2) Carry out electrochemical surface pretreatment to the monocrystalline silicon wafer after the above-mentioned step (1): immerse the silicon wafer in K of normal temperature 0.5mol / L 2 SO 4 In the solution, the silicon chip is used as the anode, a...

Embodiment 2

[0038] In this embodiment, the silicon wafer is immersed in a 0.5mol / L NaOH aqueous solution at normal temperature, and a DC constant voltage of 2.5V is applied between the anode silicon wafer and the cathode. The other steps are the same as in Example 1 to obtain a single crystal silicon wafer with a pyramid texture , see figure 2 .

Embodiment 3

[0040] In this embodiment, the silicon wafer is immersed in a 0.5mol / L hydrochloric acid solution at normal temperature, and a DC constant voltage of 2.5V is applied between the anode silicon wafer and the cathode. The other steps are the same as in Example 1 to obtain a single crystal silicon wafer with a pyramid texture , see image 3 .

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Abstract

The invention relates to a texturing method for pretreating the surface of a monocrystalline silicon wafer by adopting an electrochemical method, which comprises the following steps of: immersing the monocrystalline silicon wafer with a damaged layer removed in an electrolyte solution, taking the monocrystalline silicon wafer as an anode, taking graphite or stainless steel as a cathode, applying direct current voltage between the anode silicon wafer and the cathode, taking the anode silicon wafer as a voltage anode, taking a cathode of a counter electrode as a voltage cathode, and performing electrochemical pretreatment on the surface of the silicon wafer, and then putting the monocrystalline silicon wafer into a texturing solution for texturing to obtain a textured surface with a pyramid structure. According to the method, the growth time of the silicon wafer textured pyramid can be shortened, and the pyramid size distribution is more uniform, so that the uniform and fine high-quality textured surface is obtained. The low-voltage electrolysis method is adopted, the process investment is low, the energy consumption is small, and the high-efficiency and low-cost requirements of photovoltaic power generation at the present stage are met. The low-voltage electrolysis method is adopted, reaction conditions are mild, reaction can be carried out at normal temperature, no harm is caused to human bodies and the environment, the structure is simple, operation is convenient, and control is easy.

Description

technical field [0001] The invention belongs to the technical field of solar cell surface treatment, and in particular relates to a texturing method for pretreating the surface of a single crystal silicon wafer by an electrochemical method. Background technique [0002] The process of texturing the surface of solar cells to form an effective anti-reflection effect is called texturing, which is one of the important means to increase the efficiency of solar cells. At present, the corrosion method using cheap alkaline solution system has been widely used in industry. Single crystal silicon wafers can form a pyramid-like texture structure on the surface through anisotropic corrosion in alkaline solution, and the incident light passes through the silicon wafer surface. Multiple reflections increase the absorption of light by solar cells, thereby reducing the reflectivity of the silicon wafer surface. However, the size of the pyramid structure obtained by this process is not unif...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B33/00C30B33/10C30B29/06C25D11/32H01L31/18
CPCC30B33/005C30B33/10C30B29/06C25D11/32H01L31/1804Y02P70/50
Inventor 张宏李凤王世栋
Owner XI AN JIAOTONG UNIV
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