Vertical Ga2O3 nanotube ordered array and preparation method thereof

Abstract

The invention discloses a preparation method of a vertical Ga2O3 nanotube ordered array. The basic principle is that a GaN core nanowire in a GaN / beta-Ga2O3 nanowire array obtained after thermal oxidation is removed through ICP (Inductively Coupled Plasma) etching by utilizing the etching difference between beta-Ga2O3 and a GaN material, so that a beta-Ga2O3 nanotube array which is vertically arranged and is controllable in size is prepared. The preparation method comprises the following steps of: firstly, evaporating a nickel film on the surface of a GaN film on a substrate, annealing to enable the nickel film to become a nano island-shaped structure to serve as an etching mask, and preparing a GaN nanowire ordered array by utilizing an ICP (Inductively Coupled Plasma) etching technology; carrying out thermal oxidation on the obtained GaN nanowire ordered array at a certain temperature and in an oxygen atmosphere to obtain a GaN / beta-Ga2O3 nanowire array; and removing the GaN nanowire serving as a core by adopting a process condition beneficial to GaN etching, so as to obtain the vertical Ga2O3 nanotube ordered array. The method is a brand-new, low-cost and relatively simple method for preparing the beta-Ga2O3 nanotube, and has a potential application prospect in the fields of novel micro-nano electronics and optoelectronics.

Description

technical field [0001] The present invention relates to a vertical Ga 2 o 3 Ordered array of nanotubes and method for preparing same. Background technique [0002] Gallium oxide single crystal is a direct bandgap oxide semiconductor with a forbidden band width of 4.8-4.9eV, equivalent to more than 4 times that of silicon, even higher than silicon carbide (3.3eV) and gallium nitride (3.4eV). Known as the fourth generation of ultra-wide bandgap semiconductors. Gallium oxide single crystal has many crystal forms, among which β-Ga 2 o 3 most stable. Gallium oxide has unique ultraviolet transmission characteristics (absorption edge can reach 250nm); the breakdown electric field strength is as high as 8MV / cm, which is nearly 27 times that of the first-generation semiconductor silicon (Si), the third-generation semiconductor silicon carbide (SiC) and More than 2 times that of gallium nitride (GaN); the Baliga figure of merit (Baliga figure of merit index), which is an indicat...

AI Technical Summary

Problems solved by technology

However, these synthetic methods are difficult to achieve for β-Ga 2 o 3 Control of direction, length, size and wall thickness of nanotubes

Although these methods have been studied and achieved certain results, they all have some shortcomings, such as β-Ga with controllability, good repeatability, simple preparation process and low cost. 2 o 3 Preparation of nanotubes remains a challenge

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