Etching solution and application thereof
An etching solution and etching technology, applied in the field of etching solution, can solve the problems of difficult seed layer, small etching coefficient, increase of copper circuit short circuit, etc., achieve the effects of saving time and energy consumption, simple preparation method, and accelerating etching rate
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
specific Embodiment approach
[0044] The present invention will be described in further detail below in conjunction with specific examples. The present invention can be embodied in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the understanding of the disclosure of the present invention more thorough and comprehensive.
[0045] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field of the invention. The terms used herein in the description of the present invention are for the purpose of describing specific embodiments only, and are not intended to limit the present invention. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.
[0046] Where "comprises," "has," and "comprises" are used herein, the intent is to cover a non-exclusive i...
Embodiment 1
[0095] This embodiment provides an etching solution and a preparation method thereof.
[0096] (1) In terms of the amount of substance, the composition of etching solution in the present embodiment is:
[0097]
[0098] (2) the preparation method of etching solution in the present embodiment is:
[0099] Add 1L of deionized water to the reaction vessel, slowly add sulfuric acid, after cooling to room temperature, add formic acid, sodium chloride and sodium persulfate in sequence, then stir until the solid is completely dissolved, then add deionized water to 2L, stand for later use .
Embodiment 2
[0101] This embodiment provides an etching solution and a preparation method thereof.
[0102] (1) In terms of the amount of substance, the composition of etching solution in the present embodiment is:
[0103]
[0104] (2) the preparation method of etching solution in the present embodiment is:
[0105] Add 1L deionized water into the reaction vessel, slowly add nitric acid, after cooling to room temperature, add citric acid, ammonium chloride, hydrogen peroxide and dodecyltrimethylammonium chloride in sequence, and then stir until the solid is completely dissolved, Add deionized water to 2L and let stand for later use.
PUM
Property | Measurement | Unit |
---|---|---|
Thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com