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Graphene and nano-silver composite material and preparation method thereof

A composite material, graphene technology, applied in nanotechnology, nanotechnology, chemical instruments and methods, etc., can solve the problems of low conductivity and uncontrollable distribution of conductive nanocomposite fillers, prevent irreversible agglomeration, and facilitate flexibility. The effect of chemical and large printing area

Active Publication Date: 2021-10-29
SHANXI INST OF COAL CHEM CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In view of the defects of low conductivity of conductive nanocomposite fillers in the prior art, uncontrollable and random distribution of nano-metals on graphene sheets, and even sea-island-like nano-metal distributions, which seriously affect its performance. , the invention provides a composite material of graphene and nano-silver and a preparation method thereof

Method used

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  • Graphene and nano-silver composite material and preparation method thereof
  • Graphene and nano-silver composite material and preparation method thereof
  • Graphene and nano-silver composite material and preparation method thereof

Examples

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Effect test

Embodiment 1

[0082] Step 1: Take 180ml of graphene oxide N,N-dimethylformamide (DMF) dispersion with a concentration of 10mg / ml and a sheet diameter of 45μm, then add 66ml of 25% hydrogen peroxide, and heat at 120°C , carry out secondary oxidation under reflux for 4h, and obtain carboxylated modified graphene oxide;

[0083] Step 2: Dissolve 0.6 g of S,S'-bis(α,α'-methyl-α"-acetic acid) trithiocarbonate (BDMAT) chain transfer agent in 10 ml of N,N-dimethylformaldehyde Amide (DMF) solution, then added to the first step reaction to generate hydroxylated modified graphene oxide solution, heated to 80 ° C and adjusted to a system pH of 3-4; then in an argon atmosphere, under the heating conditions reaction, to promote the esterification reaction between the carboxyl group on the BDMAT molecular chain and the hydroxyl group on the graphene sheet, grafting BDMAT on the surface of hydroxylated modified graphene oxide, realizing the grafting of BDMAT on the surface of graphene, and obtaining a gra...

Embodiment 2

[0090] Step 1: Take 200ml of graphene oxide aqueous solution with a concentration of 4mg / ml and a sheet diameter of 25μm, then add 100ml of a mixture of nitric acid and sulfuric acid with a volume ratio of 1:3, the mass fraction is 10%, and heat at 100°C , and reflux secondary oxidation for 6h to obtain carboxylated modified graphene oxide;

[0091] Step 2: Dissolve 8g of 4-cyanopentanoic acid dithiobenzoate chain transfer agent (CPADB) in 50ml of aqueous solution, then add the first step reaction to generate hydroxylated modified graphene oxide solution, heat to 80°C; then in an argon atmosphere, react under this heating condition to promote the esterification reaction between the carboxyl groups on CPADB and the hydroxyl groups on the graphene sheet, and graft CPADB on the surface of hydroxylated modified graphene oxide, thereby achieving 4 - Cyanovaleric acid dithiobenzoate shields the hydroxyl group on the surface of graphene oxide to obtain graphene oxide chain transfer a...

Embodiment 3

[0097] Step 1: Take 300ml of graphene oxide aqueous solution with a concentration of 6mg / ml and a sheet diameter of 10μm, then add 150ml of 54g of potassium ferrate solution with a mass fraction of 10%, and carry out reflux secondary oxidation for 6h under heating conditions at 100°C , to obtain carboxylated modified graphene oxide;

[0098] Step 2: Dissolve 0.8g of 4-cyano-4-(ethylsulfanylthiocarbonyl)sulfanylvaleric acid chain transfer agent in 50ml of aqueous solution, and then add the first step to generate carboxylation modification Graphene oxide solution, heated to 80 ° C; then in an argon atmosphere, react under this heating condition to promote the carboxyl group on the 4-cyano-4-(ethylsulfanylthiocarbonyl)sulfanylvaleric acid and The hydroxyl group on the graphene sheet undergoes an esterification reaction, and 4-cyano-4-(ethylsulfanylthiocarbonyl)sulfanylvaleric acid is grafted on the surface of the hydroxylated modified graphene oxide, thereby realizing the 4- The...

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Abstract

The invention discloses a graphene and nano-silver composite material and a preparation method, and belongs to the technical field of graphene and nano-silver composite materials. According to the invention, by regulating and controlling the types and the number of oxygen-containing functional groups of graphene oxide and combining a reversible addition-fragmentation chain transfer (RAFT) polymerization technology, oxygen-containing chain segments (nano-silver nucleation growth sites) are directionally and controllably grafted on the surface or the edge of graphene; by designing and regulating and controlling different oxygen-containing functional groups and grafting sites and the number of the different oxygen-containing functional groups, active position and quantity of nucleation and growth of nano-silver are controlled, the loading mode, the loading capacity and the loading morphology of the nano-silver are accurately regulated and controlled, and an ideal experimental carrier is provided for researching the relationship between a conductive ink filler structure and the conductivity; and a high-performance filler is provided for research and development of high-performance conductive ink.

Description

technical field [0001] The invention belongs to the technical field of composite materials of graphene and nano-silver, and in particular relates to a composite material of graphene and nano-silver and a preparation method thereof. Background technique [0002] Conductive ink is a functional conductive paste produced and developed with modern printed electronics technology. Compared with traditional silicon-based electronic products, printed electronic products based on conductive ink have the advantages of flexibility, mass production, light weight, large area, low cost and green environmental protection, and are widely used in information, energy, medical, national defense and other fields prospect. The benchmark for measuring the process of electronic devices is the width of the printed line. The thinner the width, the more precise the process and the smaller the device. Limited by the size of the components, the line width of the semiconductor chip has its physical lim...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09D11/52B22F1/00B22F9/24B82Y30/00B82Y40/00C01B32/194
CPCC09D11/52B22F9/24B82Y40/00B82Y30/00C01B32/194
Inventor 陈成猛李晓明谢莉婧刘卓郭晓倩
Owner SHANXI INST OF COAL CHEM CHINESE ACAD OF SCI
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