Method for carrying out spark plasma diffusion bonding on silicon carbide ceramics by adopting refractory high-entropy alloy interlayer

A technology of discharge plasma and silicon carbide ceramics, which is applied in the direction of welding equipment, electric heating devices, welding media, etc., can solve the problems of weakening the strength of joints and reducing the reliability of joints in service, and achieves the relief of residual stress, high engineering practical value, and improvement of joints. The effect of intensity

Active Publication Date: 2021-12-24
ZHEJIANG UNIV OF TECH
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0004]Aiming at the method of diffusion bonding SiC ceramics with a single refractory metal interlayer in the prior art, there are brittle silicides that are prone to form high thermal expansion coefficients, weaken joint strength and To solve the technical problem of reducing the service reliability of joints, the present invention provides a method of using refractory high-entropy alloy intermediate layer discharge plasma diffusion to connect silicon carbide ceramics. The method uses refractory high-entropy alloy as the intermediate layer material and uses discharge plasma sintering Technology Diffusion bonding of SiC ceramics can effectively inhibit the formation of brittle silicides with high thermal expansion coefficients in SiC joints, relieve joint residual stress, thereby improving joint strength and service reliability, and is conducive to the manufacture of SiC ceramic components for high-temperature environment applications

Method used

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  • Method for carrying out spark plasma diffusion bonding on silicon carbide ceramics by adopting refractory high-entropy alloy interlayer
  • Method for carrying out spark plasma diffusion bonding on silicon carbide ceramics by adopting refractory high-entropy alloy interlayer
  • Method for carrying out spark plasma diffusion bonding on silicon carbide ceramics by adopting refractory high-entropy alloy interlayer

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Experimental program
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Embodiment 1

[0036] In this embodiment, a method of using refractory high-entropy alloy interlayer discharge plasma diffusion to connect silicon carbide ceramics is as follows:

[0037] 1. Preparation of refractory high-entropy alloy

[0038] Preparation before smelting: Weigh the raw materials by molar ratio, 14.2 at.% of tantalum particles (Ta) with a purity of 99.95%, 28.6 at.% of crystalline hafnium particles (Hf) with a purity of ≥99.95%, and 28.6 at.% of crystalline zirconium particles with a purity of ≥99.95% ( Zr) 28.6at.% and titanium particles (Ti) 28.6at.% with a purity of 99.99%, a total of 30g;

[0039] Sample loading and atmosphere purification: Put the weighed metal raw materials into the water-cooled crucible of the vacuum melting furnace in order of melting point from low to high, close the furnace door, and vacuumize. When the vacuum degree reaches 3 to 5×10 -3 Pa filled with high-purity argon to 0.05MPa;

[0040] Alloy smelting: hang the arc gun at 1-3mm directly above...

Embodiment 2

[0052] In this embodiment, a method of using refractory high-entropy alloy interlayer discharge plasma diffusion to connect silicon carbide ceramics is as follows:

[0053] 1. Preparation of refractory high-entropy alloy

[0054] Preparation before smelting: Weigh the raw materials by molar ratio, 14.2 at.% of tantalum particles (Ta) with a purity of 99.95%, 28.6 at.% of crystalline hafnium particles (Hf) with a purity of ≥99.95%, and 28.6 at.% of crystalline zirconium particles with a purity of ≥99.95% ( Zr) 28.6at.% and titanium particles (Ti) 28.6at.% with a purity of 99.99%, a total of 30g;

[0055] Sample loading and atmosphere purification: Put the weighed metal raw materials into the water-cooled crucible of the vacuum melting furnace in order of melting point from low to high, close the furnace door, and vacuumize. When the vacuum degree reaches 3 to 5×10 -3 Pa filled with high-purity argon to 0.05MPa;

[0056] Alloy smelting: hang the arc gun at 1-3mm directly above...

Embodiment 3

[0067] In this embodiment, a method of using refractory high-entropy alloy interlayer discharge plasma diffusion to connect silicon carbide ceramics is as follows:

[0068] 1. Preparation of refractory high-entropy alloy

[0069] Preparation before smelting: Weigh the raw materials by molar ratio, 14.2 at.% of tantalum particles (Ta) with a purity of 99.95%, 28.6 at.% of crystalline hafnium particles (Hf) with a purity of ≥99.95%, and 28.6 at.% of crystalline zirconium particles with a purity of ≥99.95% ( Zr) 28.6at.% and titanium particles (Ti) 28.6at.% with a purity of 99.99%, a total of 30g;

[0070] Sample loading and atmosphere purification: Put the weighed metal raw materials into the water-cooled crucible of the vacuum melting furnace in order of melting point from low to high, close the furnace door, and vacuumize. When the vacuum degree reaches 3 to 5×10 -3 Pa filled with high-purity argon to 0.05MPa;

[0071] Alloy smelting: hang the arc gun at 1-3mm directly above...

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Abstract

The invention discloses a method for carrying out spark plasma diffusion bonding on silicon carbide ceramics by adopting a refractory high-entropy alloy interlayer. According to the method, a refractory high-entropy alloy TaxHfZrTi (wherein x is equal to 0.51, Ta (at.%) is equal to 14.225%, and three elements of Hf, Zr and Ti are equal in molar weight) is taken as an interlayer material, and solid-phase diffusion welding is carried out on two SiC ceramic base materials to be welded through an SPS technology, so as to obtain a SiC ceramic welding joint. According to the obtained SiC joint, a high-strength (Ta, Hf, Zr and Ti) C high-entropy ceramic phase is formed on an interface, and brittle silicide with a large thermal expansion coefficient is prevented from being generated by diffusion bonding of SiC ceramic through single refractory metal, so that thermal mismatch of the SiC joint is mitigated, the strength of the joint is improved, the maximum room-temperature shear strength of the joint is up to 326.2+/-9.9 MPa, the hardness of the interlayer is up to 2552.1+/-357.1 HV, and the engineering practical value in a high-temperature environment is high.

Description

technical field [0001] The invention belongs to the technical field of connection of ceramic materials, and in particular relates to a method for connecting silicon carbide ceramics by using discharge plasma diffusion in the middle layer of refractory high-entropy alloy. Background technique [0002] As an important engineering ceramic, silicon carbide (SiC) ceramics have outstanding advantages such as high strength, high melting point, oxidation resistance, radiation resistance, thermal shock resistance, and corrosion resistance. They can be used as structures in high-temperature environments such as aviation, aerospace, and nuclear energy. part. However, SiC ceramics with high hardness and non-conductivity are difficult to machine, and due to the constraints of processing technology and cost, it is very difficult to prepare SiC ceramic parts with large size or complex shape. Therefore, the development of reliable SiC connection technology for high-temperature environment ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B23K1/00B23K1/20B23K3/04B23K3/08B23K35/02B23K35/24B23K35/40
CPCB23K1/0008B23K1/20B23K3/04B23K3/087B23K3/08B23K35/40B23K35/24B23K35/0233
Inventor 李华鑫程钏王军健杨建国贺艳明郑文健闾川阳马英鹤石磊金霞
Owner ZHEJIANG UNIV OF TECH
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