Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Photomask blank, method for producing photomask, and photomask

A photomask and light-shielding film technology, applied in the field of photomasks, can solve the problems of insufficient etching and reduction, and achieve the effect of achieving resolution limit, high adhesion, and good resolution limit

Pending Publication Date: 2021-12-31
SHIN ETSU CHEM CO LTD
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, for a film containing chromium, in the case where a photoresist pattern is used to perform chlorine-based dry etching to form a pattern of a film containing chromium, even if the CD linearity of the resist pattern is as designed, the In the case where a fine gap pattern is formed in the film, the probability of plasma entering the surface layer of the film containing chromium is lower than that of a large gap pattern, so etching becomes insufficient

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Photomask blank, method for producing photomask, and photomask
  • Photomask blank, method for producing photomask, and photomask
  • Photomask blank, method for producing photomask, and photomask

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0119] Manufactured a phase shift film (halftone phase shift film) which is a film made of a material containing silicon and a hard mask which is a film made of a material containing chromium on a transparent substrate made of quartz with a size of 152 mm square and a thickness of about 6 mm. Mold-film-laminated, photomask blanks (halftone phase-shift blanks).

[0120] First, on a transparent substrate, a molybdenum target and a silicon target are used as targets, the power applied to the targets is adjusted, and argon gas and nitrogen gas are used as sputtering gases, and sputtering is performed in these gas atmospheres to form a single-layer film. A MoSi-based phase shift film (thickness: 70 nm) made of MoSiN, having a phase difference of 177 degrees with respect to light having a wavelength of 193 nm, and a transmittance of 6% (optical density: 1.2) was prepared.

[0121] Next, on the phase shift film, a chromium target was used as a target, the power applied to the target ...

Embodiment 2

[0126] In order to evaluate the resolution limit of the fine pattern equivalent to the auxiliary pattern of the line pattern, using the photomask blank including the resist film obtained in Example 1, according to Figure 7 The process shown in produces figure 2 The photomask (halftone phase-shift mask) shown in .

[0127] First, a photomask blank including a resist film ( Figure 7 (A)). Secondly, using the electron beam drawing device, with a dose of 35 μC / cm 2 A test pattern corresponding to the auxiliary pattern of the line pattern was created, and a total of 200,000 isolated patterns with different short-side dimensions were drawn with a long-side size of 140 nm and a short-side size changed from 20 nm to 100 nm every 2 nm. Then, heat treatment was performed at 110° C. for 14 minutes using a heat treatment apparatus (PEB: Post Exposure Bake). Secondly, adopt immersion developing to carry out 100 second developing process, have formed resist pattern ( Figure 7 (B))....

Embodiment 3

[0144] In order to evaluate the influence accompanying the peeling of the resist film formed on the film made of a material containing chromium using the resolution limit of the fine pattern equivalent to the auxiliary pattern of the line pattern, the resist film obtained in Example 1 was used. agent film photomask blank, according to Figure 8 and Figure 7 The process shown in produces figure 2 The photomask (halftone phase-shift mask) shown in .

[0145] First, a photomask blank including a resist film ( Figure 8 (A)). Next, the resist film was peeled off by washing with sulfuric acid hydrogen peroxide water for 12 minutes. Then, in order to neutralize the sulfate ions remaining on the surface of the hard mask film (first layer), it was rinsed with ammonia-added water (ammonia hydrogen peroxide water, APM) for 15 minutes. (Layer 1) The surface was reduced by adding water to the ammonia, and carried out a 15-minute dry spin-coating rinse ( Figure 8(B)). Next, a neg...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The present invention provides a photomask blank which exhibits high adhesion of a resist film to a film containing chromium, and which is capable of achieving good resolution limit and good CD linearity during the formation of an assist pattern of a line pattern, said assist pattern supplementing the resolution of the main pattern of a photomask. A photomask blank (511) according to the present invention is provided, on a substrate, with: a film (21) to be processed; and, sequentially from the far side from the substrate, a first layer (311) which contains oxygen and nitrogen, while having a chromium content of 40% by atom or less, an oxygen content of 50% by atom or more, a nitrogen content of 10% by atom or less and a thickness of 6 nm or less, a second layer (312) which contains oxygen, nitrogen and carbon, while having a chromium content of 40% by atom or less, an oxygen content of 30% by atom or more, a nitrogen content of 17% by atom or more, a carbon content of 13% by atom or less and a thickness of 46 nm or more, and a third layer (313) which contains oxygen and nitrogen, while having a chromium content of 50% by atom or more, an oxygen content of 20% by atom or less and a nitrogen content of 30% by atom or more.

Description

technical field [0001] This invention relates to the manufacturing method of the photomask blank used for manufacture of a semiconductor device etc., a photomask using the same, and a photomask. Background technique [0002] In recent years, with the miniaturization of semiconductor devices, especially the high integration of large-scale integrated circuits, high pattern resolution is required for projection exposure. Therefore, among photomasks, a phase shift mask has been developed as a means of improving the resolution of a transfer pattern. The principle of the phase shift method is to adjust the phase of the transmitted light passing through the opening of the photomask to reverse the phase of the transmitted light passing through the part adjacent to the opening by about 180 degrees, thereby weakening the mutual interference of the transmitted light. The light intensity at the boundary portion improves the resolution and depth of focus of the transfer pattern as a res...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/32G03F1/58G03F1/82
CPCG03F1/32G03F1/58G03F1/24G03F1/26G03F1/80
Inventor 松桥直树笹本纮平
Owner SHIN ETSU CHEM CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com