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Preparation methods of lead selenide photosensitive film and integratable photoconductive sensor

A technology of photosensitive thin film and lead selenide, which is applied in semiconductor/solid-state device manufacturing, semiconductor device, sustainable manufacturing/processing, etc., can solve the problems of inability to obtain mid-infrared photoconductive performance of PbSe thin film, high cost, and narrow application range, etc. Achieve the effects of improving photoelectric sensitivity, prolonging service life, and simple and easy preparation method

Pending Publication Date: 2022-04-05
郑州炜盛电子科技有限公司
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

Lead selenide thin films are usually prepared by physical methods such as molecular beam epitaxy, vacuum evaporation, laser flash evaporation, and magnetron sputtering. These methods use expensive coating equipment and the cost is relatively high; Low, but the disadvantage is that a conductive substrate must be used, and the scope of application is narrow
Chinese patent CN200910054457.X mainly discloses the preparation process of depositing nano-scale lead telluride PbTe particles by using chemical solution, but the PbSe film with mid-infrared photoconductive properties cannot be obtained by using this similar chemical solution process

Method used

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  • Preparation methods of lead selenide photosensitive film and integratable photoconductive sensor
  • Preparation methods of lead selenide photosensitive film and integratable photoconductive sensor
  • Preparation methods of lead selenide photosensitive film and integratable photoconductive sensor

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preparation example Construction

[0044] The invention provides a preparation method of a lead selenide photosensitive thin film, which comprises the steps of preparing a lead salt thin film substrate, oxidation treatment, high temperature sensitization treatment and the like. Specifically, the preparation method includes:

[0045] Clean the substrate: soak the substrate in chromic acid washing solution for 5 h to completely remove organic and inorganic pollutants, take it out and rinse it with deionized water, and then put it into beakers filled with ethanol and deionized water for 20 hours respectively. min, blow dry with nitrogen to obtain a clean substrate, and put it in a dry box for later use;

[0046] Preparation of lead salt thin film substrate: using soluble lead salt, strong alkali, selenium source and soluble halogen salt as raw materials, using chemical bath method to deposit a halogen-doped lead selenide thin film on the clean substrate to obtain lead Salt film substrate;

[0047] Oxidation trea...

Embodiment 1

[0071] see figure 1 , this embodiment provides a preparation method of an integrated photoconductive sensor, including:

[0072] First, refer to the "experimental conditions" in the aforementioned "four. The influence of high temperature sensitization treatment on lead selenide thin films" to prepare a sensitized film substrate with a sensitization temperature of 350 °C;

[0073] The sensor can be integrated and prepared. The sensitized film substrate is sequentially subjected to passivation, pattern development, pattern formation, electrode preparation and packaging to obtain an integrated photoconductive sensor. The specific steps are as follows:

[0074] Preparing a passivation protective layer A silicon dioxide passivation protective layer with a thickness of 250nm is plated on the sensitized film substrate by magnetron sputtering to obtain a semi-finished product of the sensitive element;

[0075] To form an integrated sensor pattern, first use a photolithography machin...

Embodiment 2

[0078] This embodiment provides a preparation method for an integrated photoconductive sensor, which is basically the same as the preparation method provided in Example 1, the main differences are:

[0079] In the described step of preparing lead salt film substrate, the mol ratio of selenium powder and sodium sulfite is 1:4, and the volume ratio of described lead nitrate solution, sodium hydroxide solution, hydrogen bromide solution and selenium source solution is 1:3 :0.5:5;

[0080] In the oxidation treatment step, use 6×10 -3 K in mol / L 2 S 2 o 8 The reaction time of the solution was 45 min to chemically oxidize the film to obtain an oxide film substrate;

[0081] In the step of the high temperature sensitization treatment, the sensitization temperature is 250°C, and the halogen-containing gas is I 2 with N 2 The volume ratio is 2:1, and the sensitization time is 30 min;

[0082] In the step of preparing the sensor in an integrated manner, a passivation protective ...

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Abstract

The invention provides a preparation method of a lead selenide photosensitive film, which comprises the following steps: by taking soluble lead salt, strong alkali, a selenium source and soluble halide salt as raw materials, depositing on a substrate by adopting a chemical bath method to form a halogen-doped lead selenide film, and preparing a lead salt film substrate; the halogen-doped lead selenide film is subjected to chemical oxidation through an oxidizing agent solution, an oxidation film substrate is prepared, and the oxidizing agent solution is an H2O2 solution or a K2S2O8 solution; carrying out sensitization treatment on the oxide film substrate by adopting halogen mixed gas so as to form a lead selenide photosensitive film on the substrate; wherein the halogen mixed gas is mixed gas of halogen gas and N2 or O2. The lead selenide photosensitive film prepared by the method can improve the photoelectric sensitivity, is high in response speed and high in resolution ratio, and effectively prolongs the service life. In addition, the invention also provides a method for preparing an integratable photoconductive sensor by using the lead selenide photosensitive film.

Description

technical field [0001] The invention belongs to the technical field of photoelectric sensors, and in particular relates to a preparation method of a lead selenide photosensitive thin film and an integrated photoconductive sensor. Background technique [0002] A photoelectric sensor is a semiconductor device that converts optical information into electrical information. It has many advantages such as high precision, high resolution, good reliability, and fast response speed, and is widely used in the field of control and detection. Lead selenide (PbSe), as a traditional IV-VI semiconductor material, is a narrow-band semiconductor material with NaCl structure. Its forbidden band width is 0.27 eV at room temperature and can be reduced to 0.17 eV at absolute zero. Selenium Lead has a large excitonic Bohr radius (46 nm) and a high dielectric constant, which makes it have strong absorption and response in the 1-5 μm infrared spectral band. [0003] In the supply of photoelectric ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/368H01L21/38H01L31/032H01L31/18
CPCY02P70/50
Inventor 古瑞琴高胜国汪静郭海周杨志博
Owner 郑州炜盛电子科技有限公司
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