Method and system for growing ultra-wide bandgap semiconductor material by ultraviolet-assisted MOCVD (Metal Organic Chemical Vapor Deposition)

Abstract

The invention discloses a method and a system for growing an ultra-wide bandgap semiconductor material through ultraviolet-assisted MOCVD (Metal Organic Chemical Vapor Deposition). The method comprises the steps that when the ultra-wide bandgap semiconductor material grows through the MOCVD technology, pulse ultraviolet light evenly irradiates the surface of a substrate or the ultra-wide bandgap semiconductor material growing on the surface of the substrate, the energy of the ultraviolet light is larger than the bandgap width of the ultra-wide bandgap semiconductor material, and the illumination intensity of the ultraviolet light is gt; and 0.2 W / cm < 2 >. By utilizing the technical scheme of the invention, the epitaxial growth process difficulty and energy consumption of the ultra-wide bandgap semiconductor material can be reduced, and the crystal quality, the stress level, the optical transmission performance and the electrical breakdown characteristic of the ultra-wide bandgap semiconductor material can be remarkably improved.

Description

technical field [0001] The present application relates to a method for growing semiconductor materials, in particular to a method and system for growing ultra-wide bandgap semiconductor materials by UV-assisted MOCVD. Background technique [0002] Ultra-wide bandgap semiconductor materials include AlN, high-aluminum components AlGaN, Ga 2 o 3 , BN and other materials. They have the advantages of large band gap, high breakdown electric field, high thermal conductivity, excellent power characteristics at high frequencies, and low energy loss. It has a wide range of applications in the fields of power electronics, microwave radio frequency and ultraviolet optoelectronics. At present, the most important mass production method of wide bandgap semiconductor materials is based on metal organic vapor phase epitaxy deposition equipment (MOCVD). The reaction principle is to perform high-temperature epitaxial growth on substrates such as sapphire, silicon, and silicon carbide, rely...

AI Technical Summary

Problems solved by technology

However, the shortcomings of traditional MOCVD epitaxial growth of AlN, BN and other ultra-wide bandgap semiconductor materials are: 1) Al, B and other atomic mobility is insufficient, three-dimensional nucleation growth is dominant, threading dislocation density is high, crystal quality and shape At the same time, due to the existence of point defects, the optical absorption of the material is enhanced; 2) With the increase of the bandgap width, the defect state energy level of the ultra-wide bandgap film gradually transitions to the deep energy level, and the crystal point defect concentration is steep Increase, excessive stress will cause cracking problems, and the doping self-compensation effect will be intensified, and the doping efficiency will be low

Traditional tungsten heating wire and SiC coating will decompose or oxidize at high temperature for a long time, thus reducing the service life

2) High temperature epitaxy is also accompanied by fatal defects such as severe gas phase pre-reaction and low utilization efficiency of reactants

[0005] Although there have been some reports that the use of light-assisted CVD to grow semiconductor materials can increase the reaction rate and optimize product quality to a certain extent, due to the inherent characteristics of ultra-wide bandgap semiconductor materials such as high growth temperatures, existing light-assisted CVD solutions None of them are suitable for the growth system of ultra-wide bandgap semiconductor materials

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