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Preparation process of zinc oxide bar shape single crystal nano-probe

A single crystal nano, zinc oxide technology, applied in chemical instruments and methods, single crystal growth, single crystal growth and other directions, can solve the problems of limited specific surface area, expensive and complicated equipment, unfavorable low-cost mass production and processing, etc. The effect of large surface area and improved specific surface area

Inactive Publication Date: 2005-01-05
UNIV OF SCI & TECH OF CHINA
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Problems solved by technology

Zinc oxide nanorods prepared by the gas-liquid-solid method in the past either have a large metal catalyst particle at the front end, or have a platform-like flat crystal structure at the front end, and the radius cannot be small enough, so the specific surface area is limited; 2003 In Korea, W.I.Park et al. used high-vacuum metal-organic chemical vapor deposition equipment to prepare thinner zinc oxide nanorods with an average diameter of 25 nanometers (Appl.Phys.Lett.V80, p4234, 2002), with a conical front end. , but the equipment required by this method is expensive and complicated, and the preparation cycle is long, which is not conducive to low-cost mass production and processing

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  • Preparation process of zinc oxide bar shape single crystal nano-probe
  • Preparation process of zinc oxide bar shape single crystal nano-probe
  • Preparation process of zinc oxide bar shape single crystal nano-probe

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preparation example Construction

[0016] The preparation method of the nanoprobe in the present invention is mainly based on the gas-liquid-solid synthesis of semiconductor quasi-one-dimensional nanostructures. The method is to use clean (0001) or (1120) direction sapphire (Sapphire, also known as white gem, the molecular formula is Al 2 o 3 ) polished epitaxial substrate or a silicon single crystal substrate in (111) direction as a substrate; the subsequent preparation process is:

[0017] Depositing a metal (such as gold or nickel) particle film with a nominal thickness of 1 to 10 nanometers on the above substrate by using sputtering equipment;

[0018] Keep the side coated with the particle film facing down, and fix the substrate horizontally on a small porcelain boat filled with metal zinc powder (chemically pure or higher), and keep the distance between the substrate and the zinc powder at 2 to 10 mm;

[0019] Place the ceramic boat prepared in the above steps in the center of the heating tube of the ho...

Embodiment 1

[0022] 1. Prepare a 10×5×0.5 cubic millimeter sapphire single crystal polished epitaxial substrate with (0001) crystal orientation, clean it ultrasonically with acetone for 1 hour, and deposit a layer of nominal thickness on the substrate by sputtering equipment after drying. 2nm gold film, the substrate temperature during sputtering is room temperature, and the vacuum degree is not higher than 2×10 -2 Torr;

[0023] 2. Wash the heating tube (corundum tube) of the horizontal tubular heating electric furnace with distilled water, and then rinse twice with acetone; ultrasonically clean the 9 cm long porcelain boat with acetone for half an hour; weigh 5 grams of zinc powder (100 mesh , 99.9%, Alpha Alfa Aesar), tiled into the cleaned porcelain boat;

[0024] 3. Place the prepared sapphire substrate coated with gold film horizontally on the porcelain boat filled with zinc powder in step 2, keep the side coated with gold film vertically downward, facing the zinc powder reaction so...

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Abstract

The invention is a method of preparing zinc oxide rodlike monocrystalline nano-probe, a method of preparing zinc oxide rodlike monocrystalline nano-probe wiht tip-end curvature radius less than 5 nm, a. selecting the clean polished and extended basal slice of (0001) or (112-0)-directional sapphire as a substrate; b. using a splashing device to deposit a layer of metal particle film at a nominal thickness of 1-10 nm on the substrate; c. keeping the surface with the metal particle film facing upward, horizontally fixing the substrate on a ceramic ship holding metal zinc powder, and keeping the distance between the zinc powder and the substrate at 2-10 mm; d. placing the ceramic ship in a horizontal tube electric heating furnace, charging in argon gas from one end of the heating tube to act as protective gas and carrier gas, and discharging gas to the atmosphere from the other end; e. rapidly heating the heating tube to 450-600 deg.C, making physical gas-phase deposition reaction at this temperature for 20-120 minutes, then stopping heating, and making the heating tube naturally cool to room temperature.

Description

technical field [0001] The invention relates to a method for preparing a zinc oxide rod-shaped single-crystal nanoprobe whose tip curvature radius is less than 5 nanometers, and particularly relates to the technical fields of nano-preparation and nano-processing. Background technique [0002] Zinc oxide is a wide bandgap semiconductor material, which is recognized as an optoelectronic material with excellent performance, and can be used in ultraviolet light-emitting tubes, lasers, ultraviolet light detectors, etc. At the same time, zinc oxide is an excellent gas-sensitive material, which is sensitive to some reducing flammable or toxic gases (such as hydrogen, ammonia, carbon monoxide, nitrogen monoxide and nitrogen dioxide) and some flammable organic gases (such as Ethanol vapor, liquefied petroleum gas) has strong chemical adsorption properties, which will significantly change the transport characteristics of zinc oxide. With the development of na...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B25/00C30B29/16G12B21/02
Inventor 潘楠白雪莲崔雪峰王晓平侯建国
Owner UNIV OF SCI & TECH OF CHINA
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