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External electric field induced orientation sedimentation method for preparing nano gap

A deposition method and nano-gap technology, which is applied in nanotechnology, nanotechnology, nanostructure manufacturing, etc., can solve the problems of high requirements for prototype electrode pairs, increasing the surface thickness and lateral width of electrodes, and the gap between prototype electrode pairs should not be too large. , to achieve the effect of simple and easy control of the device, simple method and easy selection

Inactive Publication Date: 2005-08-03
SOUTHEAST UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

For example, electroplating and electroless plating both reduce the gap by the online deposition and growth of metal on the electrode pair, but at the same time increase the surface thickness and lateral width of the electrode, and the electroplating method is in the process of preparing the prototype electrode. Both ends need lead wires to apply voltage, which is only suitable for carrying out individual operations to specific devices; the electromigration method not only needs lead wires at both ends of the prototype electrode to be electrically connected, but also has higher requirements for the prototype electrode pair (the prior art is all Electron beam etching is used to prepare its prototype electrode structure), the gap between the prototype electrode pair should not be too large, usually in the quasi-nano or sub-micron scale

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] Embodiment 1: A pair of gold electrodes with a micron or submicron gap is processed on a silicon-based material by a common photolithography process, and this is used as a prototype electrode. After degreasing the surface of the gold prototype electrode with an organic solvent (acetone or ethanol), put it in a freshly prepared piranha solution (sulfuric acid: hydrogen peroxide = 3: 1, volume ratio) for 15 minutes, take it out and rinse it with water, and use nitrogen flow Blow dry; then put the above electrode into the ethanol solution of the bifunctional molecular mercapto compound HS-R-Y (such as mercaptoethylamine or 1,6-hexanedithiol) for molecular assembly; put the electrode assembled with the bifunctional molecule into Colloidal gold nanoparticles are chemically adsorbed in the colloidal gold solution for electrode surface activation treatment. Put the above-mentioned surface-activated electrode into the electroless gold plating solution, and apply an alternating ...

Embodiment 2

[0017] Embodiment 2: A pair of silver electrodes with a (sub)micron gap is processed on a silicon-based material by a common photolithography process, and this is used as a prototype electrode. After cleaning the surface of the silver prototype electrode with an organic solvent (acetone or ethanol), put it into an ethanol solution of a bifunctional molecular mercapto compound HS-R-Y (such as mercaptoethylamine or 1,6-hexanedithiol, etc.) for molecular assembly; The silver electrode assembled with bifunctional molecules is put into colloidal silver or silver ion solution for activation. The above-mentioned surface-activated silver electrodes are put into silver, gold, copper, nickel, cobalt or alloy electroless plating solutions respectively, and an alternating electric field (voltage peak value of the alternating electric field) is applied along the direction of the electrode pair outside the electroless plating reactor 10~1000V / cm, frequency 10~10 6 Hz), induce the metal to ...

Embodiment 3

[0018] Embodiment 3: A platinum electrode pair with a micron or submicron gap is processed on a silicon-based material by a common photolithography process, and this is used as a prototype electrode. After cleaning the surface of the platinum prototype electrode, put it into the ethanol solution of hydroxycarboxylic acid, hydroxyphosphinecarboxylic acid or aminophosphinecarboxylic acid for molecular assembly; put the platinum electrode assembled with functional molecules into colloidal platinum solution or platinum ion solution Electrode surface activation treatment is carried out. Put the above-mentioned surface-activated platinum electrode into the electroless platinum plating solution, and apply an alternating electric field along the direction of the electrode pair outside the electroless plating reactor (the voltage peak value of the alternating electric field is 10~1000V / cm, and the frequency is 10 ~10 6 Hz), the metal platinum is induced to preferentially deposit and g...

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Abstract

An outer electric field induced orientation deposition method for preparing nm gaps relates to a processing technology, including the following steps: preparing an original electrode with a micrometer or sub-micrometer gap by ordinary photo-etching, assembling double-function molecules 'X-R-Y' chemical plating initiator of chemisorption to make the electrode surface with catalytic activity, putting the original electrode in a chemical plating solution and applying an outer discrete alternate electric field along the electrode couple direction to synchronously induce metals to prior deposit and orient-grow on the top of the electro-couple to reduce the gap of electrodes.

Description

technical field [0001] The invention relates to a nano-structure processing technology, in particular to a method for preparing a nano-gap combined with an external discrete electric field-induced orientation deposition, and belongs to the technical field of nano-device processing. Background technique [0002] Nanoelectronic devices, whose characteristic size is within the nanoscale (1-100nm), no longer follow the basic operating laws of traditional microelectronics, and the volatility and quantum effects of electrons will play an important role in such devices. For example, the core component of a double-junction single-electron transistor composed of a double-tunnel junction and a Coulomb island is a nano-gap electrode. Since the electrode spacing is reduced to the nanometer level, the potential barrier formed by the tunnel junction between the source / drain and the island and the potential well (ie Coulomb island) between the barriers are very sma...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B82B3/00H01L21/28H01L21/44
Inventor 徐丽娜顾宁黄岚解胜利
Owner SOUTHEAST UNIV
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