External electric field induced orientation sedimentation method for preparing nano gap

Abstract

An outer electric field induced orientation deposition method for preparing nm gaps relates to a processing technology, including the following steps: preparing an original electrode with a micrometer or sub-micrometer gap by ordinary photo-etching, assembling double-function molecules 'X-R-Y' chemical plating initiator of chemisorption to make the electrode surface with catalytic activity, putting the original electrode in a chemical plating solution and applying an outer discrete alternate electric field along the electrode couple direction to synchronously induce metals to prior deposit and orient-grow on the top of the electro-couple to reduce the gap of electrodes.

Description

technical field

[0001] The invention relates to a nano-structure processing technology, in particular to a method for preparing a nano-gap combined with an external discrete electric field-induced orientation deposition, and belongs to the technical field of nano-device processing. Background technique

[0002] Nanoelectronic devices, whose characteristic size is within the nanoscale (1-100nm), no longer follow the basic operating laws of traditional microelectronics, and the volatility and quantum effects of electrons will play an important role in such devices. For example, the core component of a double-junction single-electron transistor composed of a double-tunnel junction and a Coulomb island is a nano-gap electrode. Since the electrode spacing is reduced to the nanometer level, the potential barrier formed by the tunnel junction between the source / drain and the island and the potential well (ie Coulomb island) between the barriers are very small, and the electrons mai...