Controllable asymmetric doping potential barrier nano silicon based luminous device and method for producing the same

A light-emitting device, nano-silicon technology, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as unbalanced carrier injection

Inactive Publication Date: 2009-10-28
NANJING UNIV
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The above methods all improve the injection efficiency of carriers from the electrode to the light-emitting active layer, but, as far as the applicant knows, there is no effective solution to the current-carrying problem caused by the difference in the energy band shift of the conduction band and the valence band. Method for sub-injecting unbalanced problems

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Controllable asymmetric doping potential barrier nano silicon based luminous device and method for producing the same
  • Controllable asymmetric doping potential barrier nano silicon based luminous device and method for producing the same
  • Controllable asymmetric doping potential barrier nano silicon based luminous device and method for producing the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0053] The controllable asymmetric doped barrier nano-silicon light-emitting device in this embodiment uses Al / P-doped a-SiO 2 / nc-Si / B-doped a-SiCx / p-type Si device structure, the preparation process is as follows:

[0054] The first step is to prepare a multi-layer film with a quantum well structure by using plasma-enhanced chemical vapor deposition (PECVD) technology

[0055] 1-1. Preparation of boron-doped hydrogenated amorphous silicon carbide (B-doped a-SiCx:H) film as a barrier layer: using a flat capacitive RF plasma-enhanced chemical vapor deposition (PECVD) system, the substrate is placed in the reaction On the metal anode plate grounded in the chamber, silane (SiH 4 ), methane (CH 4 ) and borane (B 2 h 6 ) (borane diluted with hydrogen, with a concentration of 1%) as a reactive gas source, to deposit a boron-doped a-SiCx:H film with a thickness of no more than 10 nm (for example, 0.2-10 nm). During deposition, the gas flow ratio is preferably SiH 4 :CH 4 :B ...

Embodiment 2

[0070] The controllable asymmetric doped barrier nano-silicon-based light-emitting device and its preparation method in this embodiment use ITO (indium tin oxide) / B-doped a-SiCx / nc-Si / P-dopeda-SiO 2 / n-type Si device structure, the implementation process is as follows:

[0071] The first step, using plasma enhanced chemical vapor deposition (PECVD) technology to prepare multilayer films with quantum well structure

[0072] 1-1. Preparation of phosphorous hydrogenated amorphous silicon (P-doped a-Si:H) thin film: using a flat capacitive radio frequency plasma enhanced chemical vapor deposition (PECVD) system, the n-type substrate is placed in a grounded reaction chamber On the metal anode plate, silane (SiH 4 ) and phosphine (PH 3 ) (phosphine diluted with hydrogen, the concentration is 1%) as a reaction gas source, continue to deposit a 0.1-5nm thick phosphorus-doped hydrogenated amorphous silicon film on the hydrogenated amorphous silicon (a-Si:H) film . During deposition...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention relates to a nano-silicon-based light-emitting device based on a controllable asymmetric doping barrier quantum well structure and a preparation method thereof, belonging to the technical field of nano-electronics and nano-optoelectronic device materials. In the light-emitting device, a boron-doped amorphous silicon carbide film is deposited on the semiconductor substrate as a hole barrier layer; a nano-silicon film formed after annealing of the amorphous silicon film is deposited on the hole barrier layer as a light emitting device. Active layer; a phosphorus-doped amorphous silicon dioxide film is deposited on the light-emitting active layer as an electron barrier layer; a conductive film with an optical window is deposited on the electron barrier layer as the cathode of a light-emitting device; semiconductor A conductive thin film is deposited on the back of the substrate as an anode. The technological process is to prepare a multi-layer thin film with a quantum well structure, and then post-process annealing crystallization and prepare device electrodes. The invention has the advantages of high-efficiency and balanced carrier injection structure and Si / SiO2 light-emitting system, and provides the possibility for the realization of high-efficiency silicon-based light-emitting devices.

Description

technical field [0001] The invention relates to a silicon-based light-emitting device, especially a nano-silicon-based light-emitting device based on a controllable asymmetric doping barrier quantum well structure, and also relates to a preparation method thereof, belonging to the technical field of nano-electronics and nano-optoelectronic device materials . Background technique [0002] Silicon-based microelectronics technology has become the basis of modern electronic technology, created today's rapidly developing information age, and caused great changes in social life. However, with the continuous improvement of the integration of microelectronic devices, the existing devices will reach their physical limits and face many new challenges such as physical mechanisms, time delays, and processes. In the above background, people's attention has turned from electrons to photons, trying to use photons as information carriers. However, in the field of optoelectronic integratio...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00
Inventor 韦德远徐骏王涛陈德媛韩培高孙红程刘宇陈谷然陈坤基马忠元李伟徐岭
Owner NANJING UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap