Chemical passivation method for measuring minority carrier lifetime of crystalline silicon

Abstract

The invention discloses a chemical passivation method for measuring the service life of a minority carrier of crystalline silicon, wherein, a silicon chip after finishing damage-layer removing process is washed by a high-concentration hydrogen fluoride solution of 39 percent or 49 percent concentration diluted by de-ionized water in a normal temperature to remove the natural oxide on the surface of the silicon chip; then the silicon chip is put in a transparent, hydrogen fluoride (HF) resistant plastic bag free of electrical signal interference, and drops of hydrogen fluoride (HF) solution of 39 percent concentration are dropped on the front and the rear surfaces of the crystalline silicon, and then the hydrogen fluoride solution on the silicon chip is needed to be flatted outside the plastic bag to make the thickness of the hydrogen fluoride solution less than 1mm; finally the air bubbles rudimental on the silicon chip are removed. After sealed by a plastic sealing machine, the plastic bag is put on a sample table of a measuring device for measuring. The invention can achieve the even passivation effect of the surface of the silicon chip, and reduces the composition speed of the surface under 100cm / s, and the invention is of low cost, easy operation, time-saving measurement, and is particularly suitable for measuring and analyzing raw silicon chip materials in solar battery production and research department.

Description

technical field [0001] The invention relates to a method for passivating the surface of crystalline silicon with a chemical solution for testing the minority carrier lifetime of crystalline silicon. Background technique [0002] Minority carrier lifetime (referred to as bulk minority carrier lifetime) is an important parameter of semiconductor crystalline silicon materials, which has an important impact on the performance of semiconductor devices and the photoelectric conversion efficiency of crystalline silicon solar cells. In solar cells, the lifetime value determines the stable number of electrons and holes when carriers are continuously generated. These numbers determine the voltage generated by the device and therefore require that the minority carrier lifetime of the crystalline silicon body of the silicon material used should be as high as possible. It is precisely because the bulk minority carrier lifetime of the crystalline silicon used is directly related to the e...

AI Technical Summary

Problems solved by technology

[0010] The purpose of the present invention is to overcome the following shortcomings in the prior art: complex chemical cleaning process in the early stage, high-temperature oxidation process and plasma deposition film process of high energy consumption and likely to reduce the bulk performance of crystalline silicon, and other chemical passivation processes. In order to avoid the operational complexity of the crystalline silicon method and the pollution caused by the test crystalline silicon, a method for chemical passivation of the crystalline silicon is provided.

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