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Preparation method of indium antimonide nanocrystal

A nanocrystal, indium antimonide technology, applied in the field of III-V group nanocrystal material preparation, can solve the problems of uncontrollable material structure and morphology process, high reaction temperature, highly toxic antimony source or harsh treatment conditions, etc. The effect of stable properties, high yield and short reaction time

Inactive Publication Date: 2012-11-07
SHANGHAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

For example, all three of them require higher reaction temperatures (organometallic vapor phase epitaxy: 400-700°C; laser-assisted catalytic growth: ~800°C; liquid-phase method: 240-360°C); Harsh conditions (SbH 3 , Sb[Si(CH 3 )] 3 or Sb[N(CH 3 ) 2 ] 3 ); most require the use of nanocatalyst particles, which often remain in the product or at the ends of InSb nanocrystals; the process is uncontrollable in terms of material structure and morphology

Method used

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  • Preparation method of indium antimonide nanocrystal
  • Preparation method of indium antimonide nanocrystal
  • Preparation method of indium antimonide nanocrystal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] a. Add 110mg Sb 2 o 3 , 290mg In(NO 3 ) 3 9 / 2 H 2 0. 50mg PEG200 and 25mL ethylene glycol were mixed in a 250mL three-necked flask as a growth solution;

[0017] b. Add 200mg NaBH 4 Dissolved in 5mL ethylenediamine as a stock solution;

[0018] c. Put the growth solution in an oil bath to 140°C under nitrogen protection atmosphere, and keep magnetic stirring for 30 minutes. Then adjust the oil temperature to the reaction temperature of 120°C; quickly inject the stock solution into the growth solution with a syringe (~2S), keep the oil bath temperature and magnetic stirring;

[0019] d. Sampling the reaction solution from the reaction to 10 minutes, adding an appropriate amount of ethanol to the extracted reaction solution, and centrifuging at 15000 rpm for 20 minutes to separate the product antimonide (InSb).

Embodiment 2

[0021] a. Add 110mg Sb 2 o 3 , 290mg In(NO 3 ) 3 9 / 2 H 2 0. 50mg PEG200 and 25mL ethylene glycol were mixed in a 250mL three-necked flask as a growth solution;

[0022] b. Add 200mg NaBH 4 Dissolved in 5mL ethylenediamine as a stock solution;

[0023] c. Under a nitrogen protective atmosphere, bring the oil bath of the growth solution to 140°C and keep it under magnetic stirring for 30 minutes; then adjust the temperature of the oil margin to the reaction temperature of 140°C. Use a syringe to quickly inject the stock solution into the growth solution (~2S), keep the oil bath temperature and magnetic stirring;

[0024] d. Sampling the reaction solution from the reaction to 10 minutes; add an appropriate amount of ethanol to the extracted reaction solution, and centrifuge at 15000 rpm for 20 minutes to separate the product indium antimonide (InSb).

Embodiment 3

[0026] a. Add 110mg Sb 2 o 3 , 290mg In(NO 3 ) 3 9 / 2 H 2 0. 50mg PEG200 and 25mL ethylene glycol were mixed in a 250mL three-necked flask as a growth solution;

[0027] b. Add 200mg NaBH 4 Dissolved in 5mL ethylenediamine as a stock solution;

[0028] c. Under a nitrogen protective atmosphere, bring the oil bath of the growth solution to 140°C and keep magnetic stirring for 30 minutes; then adjust the temperature of the oil margin to the reaction temperature of 160°C. Use a syringe to quickly inject the stock solution into the growth solution (~2S), keep the oil bath temperature and magnetic stirring;

[0029] d. Sampling the reaction solution from the reaction to 10 minutes; add an appropriate amount of ethanol to the extracted reaction solution, and centrifuge at 15000 rpm for 20 minutes to separate the product indium antimonide (InSb).

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Abstract

The invention relates to a preparation method of an indium antimonide nanocrystal, belonging to the technical field of a composite nanocrystal material. The product of the preparation method is the indium antimonide nanocrystal. The preparation method of the indium antimonide nanocrystal comprises steps of: mixing Sb2O3, In(NO3)3.9 / 2H2O, PEG200 (polyethylene glycol) with ethanediol in a 250ml three-necked flask, wherein the mixture is taken as growth solution; dissolving NaBH4 into ethidene diamine to be taken as storage solution; performing the oil bath on the growth solution until the temperature of the solution is 140 DEG C under the protective atmosphere of the nitrogen, and keeping the magnetic stirring for 30 minutes; adjusting the oil bath temperature at reaction temperature (120 DEG C-180 DEG C); fast injecting the storage solution into the growth solution (-2S) by a needle cylinder, and keeping the oil bath temperature and the magnetic stirring; sampling reaction solution within the reaction time from 5 minutes to 5 hours; and adding the alcohol with proper amount into the sampled reaction solution, and centrifuging for 20 minutes at the rotation speed of 15000rpm to separate the product (InSb). The preparation method is a liquid phase preparation method for preparing the InSb nanocrystal at a lower temperature (120-180 DEG C), wherein the method is high-efficiency, low-priced, free of catalytic agent and relatively safe; the prepared product is stable in property, and even in particle; and the preparation method can be used for providing the indium antimonide nanocrystal which is suitable for a high-speed electronic component, a magnetic component, and a far infrared-waveband photoelectric component.

Description

technical field [0001] The invention relates to a method for preparing indium antimonide nanocrystals, belonging to the technical field of preparation of III-V group nanocrystal materials. Background technique [0002] InSb is the semiconductor material with the narrowest band gap and the highest carrier mobility among III-V semiconductors. It has been well applied in infrared detection. However, due to its nanoscale quantum dots, wells and low-dimensional semiconductor quantum systems It exhibits many special physical properties such as light, electricity and magnetism, and has great application prospects in the fields of ultra-high-density magnetic heads, medical imaging, and short-distance communication. In today's semiconductor industry, reducing product power consumption is an important part of development, and using new materials to replace old materials is an important breakthrough - and InSb can supplement the shortage of silicon elements, while reducing chip power ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/40C30B7/14
Inventor 李冬梅傅腾飞姚亚玲徐天胜施昕
Owner SHANGHAI UNIV