Preparation method of crescent nanometer metal structures

A metal nano, crescent-shaped technology, which is applied in the fields of nanostructure manufacturing, nanotechnology, nanotechnology, etc., can solve the difficulty in realizing the controllable preparation of repetitive crescent-shaped metal nanostructures, the size of limited lithography resolution, and the low efficiency. and other problems, to achieve the effect of controllable size and shape, low cost and high efficiency

Active Publication Date: 2012-07-04
NAT UNIV OF DEFENSE TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Most of these preparation processes have high cost and low efficiency, and are mostly limited by factors such as the size of lithography resolution, so it is difficult to achieve the controllable preparation of crescent-shaped metal nanostructures with good repeatability and large-area hotspots.

Method used

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  • Preparation method of crescent nanometer metal structures
  • Preparation method of crescent nanometer metal structures
  • Preparation method of crescent nanometer metal structures

Examples

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Effect test

Embodiment 1

[0047] A method for preparing a crescent-shaped metal nanodisk array of the present invention, comprising the following steps:

[0048] (1) Preparation of monolayer ordered polystyrene nanosphere dense arrangement:

[0049] a) Prepare the silicon wafer: select a (110) oriented silicon wafer with a size of 25mm×25mm×0.5mm as the substrate 1, and put the silicon wafer into acetone, ethanol, and deionized water for ultrasonic cleaning for 30 minutes, and then put hydrogen peroxide and 98 % concentrated sulfuric acid was heated to 80°C, and the ultrasonically cleaned silicon chips were soaked in it for 1 hour. Soak in the washing solution at ℃ for 1 hour, take it out and rinse it repeatedly to obtain a clean and hydrophilic surface of the silicon wafer, and place it in absolute ethanol for later use;

[0050] b) Preparation of polystyrene nanosphere suspension system: select polystyrene nanospheres with an average particle size of 300 nm and a monodispersity of less than 5%, and ...

Embodiment 2

[0059] A method for preparing a crescent-shaped gold nanodisk structure array supported by silicon pillars of the present invention, comprising the following steps:

[0060]Using the crescent-shaped gold nanodisk array prepared in Example 1 as a mask, in an inductively coupled plasma etching vacuum chamber, using sulfur hexafluoride and argon as gas sources, the The chip is etched, the volume flow rate of sulfur hexafluoride is 50 sccm, the volume flow rate of argon gas is 35 sccm, the vacuum degree of the vacuum chamber is controlled at 0.01±0.003Pa, the RF power during the etching process is 40W, and the etching time is 12min. After the etching is completed, the obtained Figure 14 A crescent-shaped array of gold nanoparticles supported by silicon pillars is shown (substrate 1 forming silicon pillars 8 and gold film forming gold nanoparticles 9).

Embodiment 3

[0062] A method for preparing discrete crescent-shaped gold-silver composite nanoparticles of the present invention, comprising the following steps:

[0063] (1) Prepare a single layer of ordered polystyrene nanospheres densely arranged: select polystyrene nanospheres with an average particle size of 200nm, and the volume ratio of the solvent to the solvent is 25%, the spin-coating speed is 2000rpm, and the spin-coating time is 12min. Other processes are with embodiment 1;

[0064] (2) Prepare a non-dense arrangement of single-layer ordered polystyrene nanospheres: same as Example 1, the difference is that the etching time is 5 min to 7 min;

[0065] (3) deposit chromium: with embodiment 1;

[0066] (4) Preparation of chromium nano-hole array: same as Example 1;

[0067] (5) Prepare a crescent-shaped mask hole array of composite material: select silica nanospheres with an average particle size of 130 nm (formulate a silica nanosphere suspension system with a volume ratio of ...

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Abstract

The invention discloses a preparation method of three crescent structural arrays including a crescent nanometer metal disc array, a crescent nanometer metal disc structural array supported by silicon columns and crescent scattered nanometer metal particles and the like. The preparation method of the crescent nanometer metal disc array includes technical steps of preparing a single ordered polystyrene nanometer ball dense array layer and a single ordered nanometer polystyrene ball non-dense array layer, depositing metal, preparing a metal nanometer round hole array, preparing a crescent mask hole array made of composite materials and the crescent nanometer metal disc array and the like; then etching the crescent nanometer metal disc array which is used as a mask to prepare the crescent nanometer metal disc structural array supported by the silicon columns and corroding the crescent nanometer metal disc array to prepare the scattered crescent nanometer metal particles. The preparation method is high in universality and adaptability, fine in compatibility, high in efficiency and low in cost and capable of bringing convenience for research of the crescent nanometer metal structures.

Description

technical field [0001] The invention relates to the field of metal nanostructures, in particular to a preparation method of a crescent-shaped nanostructure. Background technique [0002] In recent years, the surface plasmons generated by the collective excitation of free electrons on the surface of metals (especially noble metals such as gold, silver, and copper) have given metal arrays and particles unique optical and chemical properties. Surface-enhanced Raman scattering is related to factors such as particle size, shape, and particle environment. Experiments have proved that the nano-tips in the structure not only expand the enhancement range, but also increase the scattering intensity. Therefore, compared with the surface-enhanced Raman scattering substrate of spherical nanoparticles that depends on the internal coupling effect, each particle of the crescent-shaped metal particle substrate has an independent surface-enhanced Raman effect, making the local Raman intensity...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B82B3/00B82Y30/00B82Y40/00C23C14/04
Inventor 吴学忠董培涛陈剑王朝光王浩旭邸荻吕宇王俊峰
Owner NAT UNIV OF DEFENSE TECH
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