Solar cell device and manufacturing method thereof

A technology of solar cells and devices, which is applied in the manufacture of electric solid devices, capacitor parts, semiconductor/solid devices, etc., can solve the problems of low photocurrent density and energy conversion efficiency, and achieve improved photocurrent density and energy conversion efficiency, Simple operation, and the effect of improving absorption and utilization efficiency

Inactive Publication Date: 2012-09-26
OCEANS KING LIGHTING SCI&TECH CO LTD +1
View PDF3 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the contact barrier between the acceptor material and the donor material in the active layer is high, making the photocurrent density and energy conversion efficiency low

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Solar cell device and manufacturing method thereof
  • Solar cell device and manufacturing method thereof
  • Solar cell device and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0030] Please also see figure 2 , the preparation method of the solar cell device of an embodiment, it comprises the following steps;

[0031] Step S110 , providing a conductive substrate 10 , and removing organic pollutants on the surface of the conductive substrate 10 . The conductive substrate 10 is indium tin oxide glass (ITO), fluorine doped tin oxide glass (FTO), aluminum doped zinc oxide glass (AZO) or indium doped zinc oxide (IZO) glass. In this embodiment, the conductive substrate 10 is first subjected to photolithography treatment, cut into the required size, and then ultrasonically cleaned with detergent, deionized water, acetone, ethanol, and isopropanone for 15 minutes (min) to remove the conductive substrate 10. Organic contamination of the substrate 10 surface.

[0032] Step S112 , performing oxygen plasma treatment or UV-ozone treatment on the conductive substrate 10 . The oxygen plasma treatment time is 5-15 minutes, and the power is 10-50W; the UV-ozone t...

Embodiment 1

[0041] First mix P3HT and PCBM at a mass ratio of 1:1 to prepare a chlorobenzene solution with a mass concentration of 24 mg / ml, stir well and then add silicon phthalocyanine, the mass concentration of silicon phthalocyanine is 0.5 mg / ml, and stir for 24 hours to form Doping with active solution; then photolithographically process the ITO glass, cut it into the required light-emitting area, and then use detergent, deionized water, acetone, ethanol, and isopropanol to perform ultrasonic cleaning for 15 minutes respectively to remove the surface of the glass. Organic pollutants; after cleaning, oxygen plasma treatment is performed on them, the oxygen plasma treatment time is 5-15min, and the power is 10-50W; after that, the commercially available buffer layer material PEDOT / The PSS solution is spin-coated on the treated substrate, the spin-coating speed is 500-3000rpm, the spin-coating time is 20-60s, the thickness of the buffer layer is 20-80nm, and then baked at 100-200°C for ...

Embodiment 2

[0045] First mix P3HT and PCBM at a mass ratio of 1:1 to prepare a chlorobenzene solution with a mass concentration of 20 mg / ml, stir well and then add silicon phthalocyanine with a mass concentration of silicon phthalocyanine of 0.7 mg / ml, and stir for 24 hours; Then the ITO glass is subjected to photolithography treatment, cut into the required luminous area, and then ultrasonically cleaned with detergent, deionized water, acetone, ethanol, and isopropanol for 15 minutes to remove organic pollutants on the glass surface; After cleaning, it is subjected to oxygen plasma treatment, the oxygen plasma treatment time is 5-15min, and the power is 10-50W; after that, the commercially available buffer layer material PEDOT / PSS solution with a weight ratio of 2:1-6:1 is spin-coated on the On the treated substrate, the spin-coating speed is 500-3000rpm, the spin-coating time is 20-60s, the thickness of the buffer layer is 20-80nm, and then baked at 100-200°C for 15-50min; then transfer ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
current densityaaaaaaaaaa
Login to view more

Abstract

The invention relates to a solar cell device which comprises a conductive substrate, a doping active layer, an electron injection layer formed on the doping active layer and a cathode formed on the electron injection layer. The doping active layer is formed between the conductive substrate and the electron injection layer, and is formed by at least one selected from the group consisting of P3HT/PCBM, P3AT/PCBM, MDMO-PPV/PCBM, and MEH-PPV/PCBM doped with phthalocyanines dye micromolecule, and the cathode is formed on the electron injection layer. The solar device has relatively high photocurrent density and light absorption efficiency. In addition, a manufacturing method of the solar cell device is also provided.

Description

【Technical field】 [0001] The invention relates to a solar battery device and a preparation method thereof. 【Background technique】 [0002] Solar cells have been widely used due to their cheapness, cleanness, and renewability. Existing solar cell devices use P3HT / PCBM, P3AT / PCBM, MDMO-PPV / PCBM or MEH-PPV / PCBM as the active layer to form excitons. The active layer includes donors and acceptors, and the excitons have a built-in electric field Under the action, it diffuses to the donor / acceptor interface and separates into freely moving electrons and holes, then the electrons are transferred in the acceptor phase and collected by the cathode, and the holes pass through the donor phase and are collected by the anode, thereby generating photocurrent . However, the contact barrier between the acceptor material and the donor material in the active layer is high, resulting in low photocurrent density and energy conversion efficiency. 【Content of invention】 [0003] Based on this...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01G9/004H01G9/042H01G9/20H01M14/00H01L51/46H01L51/48
CPCY02E10/549
Inventor 周明杰王平黄辉陈吉星
Owner OCEANS KING LIGHTING SCI&TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap