Preparation method of pyrite-type ferrous disulfide nanoscale single-crystal semiconductor material

A technology of ferrous disulfide and pyrite type, which is applied in the direction of ferric sulfide, polycrystalline material growth, chemical instruments and methods, etc., to achieve the effects of wide selection range, simple preparation process and reduced production cost

Inactive Publication Date: 2015-07-08
LANZHOU UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Marcasite-type ferrous disulfide is an unstable variant of pyrite-type ferrous disulfide, and its direct band gap is 0.51 eV, which is too narrow to be used as a solar cell material.
At present, there is no report on the preparation method of pyrite-type ferrous disulfide single crystals with monodisperse, single phase and particle size of about 50 nm using sulfide as a sulfur source.

Method used

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  • Preparation method of pyrite-type ferrous disulfide nanoscale single-crystal semiconductor material
  • Preparation method of pyrite-type ferrous disulfide nanoscale single-crystal semiconductor material
  • Preparation method of pyrite-type ferrous disulfide nanoscale single-crystal semiconductor material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] Example 1 A preparation method of pyrite type ferrous disulfide nano single crystal semiconductor material, comprising the following steps:

[0044] ⑴Mix the iron source—ferrous chloride with a concentration of 0.05 mol / L and trioctylphosphine oxide (TOPO) at a molar ratio of 1:2, and dissolve in oleylamine, stir and pass the purity to 98.5% After removing oxygen from the above argon or nitrogen gas, an iron source precursor is obtained.

[0045] Among them: the mass volume ratio (g / ml) of iron source to oleylamine is 1:100.

[0046] (2) Heating the iron source precursor to 120° C. in an oil bath and stirring for 1.5 hours to obtain an iron source solution.

[0047] (3) Dissolve the sulfur source—sulfur powder in oleylamine, and after stirring and passing argon or nitrogen with a purity of more than 98.5% to remove oxygen, obtain a sulfur source solution.

[0048] Among them: the mass volume ratio (g / ml) of sulfur source to oleylamine is 1:50.

[0049] (4) Heati...

Embodiment 2

[0053] Example 2 A preparation method of pyrite type ferrous disulfide nano single crystal semiconductor material, comprising the following steps:

[0054] ⑴Mix the iron source—ferrous chloride with a concentration of 0.5 mol / L and trioctylphosphine oxide (TOPO) at a molar ratio of 1:6, and dissolve in oleylamine, stir and pass the purity to 98.5% After removing oxygen from the above argon or nitrogen gas, an iron source precursor is obtained.

[0055] Among them: the mass volume ratio (g / ml) of iron source to oleylamine is 1:300.

[0056] (2) Heating the iron source precursor to 170° C. in an oil bath and stirring for 0.5 hours to obtain an iron source solution.

[0057] (3) Dissolve the sulfur source—thioacetamide in oleylamine, and after stirring and passing argon or nitrogen with a purity of more than 98.5% to remove oxygen, obtain a sulfur source solution.

[0058] Among them: the mass volume ratio (g / ml) of sulfur source to oleylamine is 1:100.

[0059] (4) Heating...

Embodiment 3

[0063] Example 3 A preparation method of pyrite type ferrous disulfide nano single crystal semiconductor material, comprising the following steps:

[0064] ⑴Mix the iron source—ferrous chloride with a concentration of 0.25 mol / L and trioctylphosphine oxide (TOPO) at a molar ratio of 1:4, and dissolve in oleylamine, stir and pass the purity to 98.5% After removing oxygen from the above argon or nitrogen gas, an iron source precursor is obtained.

[0065] Among them: the mass volume ratio (g / ml) of iron source and oleylamine is 1:200.

[0066] (2) Heating the iron source precursor to 140° C. in an oil bath and stirring for 1 hour to obtain an iron source solution.

[0067] (3) Dissolve the sulfur source—L-cysteine ​​monohydrate hydrochloride in oleylamine, and after stirring and passing argon or nitrogen with a purity of more than 98.5% to remove oxygen, obtain a sulfur source solution.

[0068] Among them: the mass volume ratio (g / ml) of sulfur source to oleylamine is 1:...

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Abstract

The invention relates to a preparation method of a pyrite-type ferrous disulfide nanoscale single-crystal semiconductor material. The preparation method comprises the following steps that 1, an iron source and trioctylphosphine oxide are mixed; and the mixture is dissolved in oleylamine, then is stirred and is filled with argon or nitrogen so that oxygen is removed and an iron source precursor is obtained; 2, the iron source precursor is heated in an oil bath with stirring so that an iron source solution is obtained; 3, a sulfur source is dissolved in oleylamine, then is stirred and is filled with argon or nitrogen so that oxygen is removed and a sulfur source solution is obtained; 4, the sulfur source solution is heated, then is extracted by a needle tubing and then is fast injected into the iron source solution; the oil bath for heating the iron source solution is heated; and the mixed solution undergoes a reaction to produce pyrite-type ferrous disulfide colloid; and 5, the pyrite-type ferrous disulfide colloid is cooled to a room temperature and then is added with a trichloromethane-ethanol mixed solution; the mixture is subjected to washing and centrifugation until an upper centrifugate is colorless; and the washed sample is sealed in a chloroform solution. The pyrite-type ferrous disulfide nanoscale single-crystal semiconductor material obtained by the preparation method has uniform particle sizes and morphology, and stable quality. The preparation method has good repeatability.

Description

technical field [0001] The invention relates to a method for preparing a pyrite-type ferrous disulfide single crystal, in particular to a method for preparing a pyrite-type ferrous disulfide nanometer single crystal semiconductor material. Background technique [0002] Ferrous disulfide in nature exists in two forms of pyrite and marcasite. Pyrite-type ferrous disulfide is an excellent semiconductor material with a direct band gap of 0.95 eV, which is close to the requirement of 1.1 eV for ideal solar cell materials (A. Ennaoui, S. Fiechter, C. Pettenkofer, N. Alonso-Vante, K. Buker, M. Bronold, C. Hopfner and H. Sol. Tributsch, Iron disulphide for solar energy conversion [J]. Energy. Mater. Sol. Cells.1993, 29, 289-370.). Marcasite-type ferrous disulfide is an unstable variant of pyrite-type ferrous disulfide, and its direct band gap is 0.51 eV, which is too narrow to be used as a solar cell material. The light absorption coefficient of pyrite-type ferrous sulfide is as h...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B7/14C30B29/46C01G49/12B82Y30/00
Inventor 拜永孝包琰魏成蓉邓爱英胡新军
Owner LANZHOU UNIVERSITY
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