Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

PrPrearation method for graphene film

A graphene film and substrate technology, applied in the field of graphene film preparation, can solve the problems of accelerating the development of graphene technology and practical application, and achieve the effects of excellent optoelectronic properties and easy size

Active Publication Date: 2013-01-30
ZHEJIANG UNIV
View PDF3 Cites 28 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Like this, in the actual application of graphene film, the large-area graphene film synthesized on the metal substrate must be transferred to other target substrates such as insulating substrates before the graphene film can be used; Therefore, if there is a technical method to directly grow graphene film on a substrate suitable for the specific application technology of graphene film, such as an insulator or a semiconductor substrate, the transfer step will not be required, and the resulting Changes in the structural quality of graphene films; this will accelerate the development and practical application of graphene technology

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • PrPrearation method for graphene film
  • PrPrearation method for graphene film
  • PrPrearation method for graphene film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] Embodiment 1: utilize the monolayer graphene prepared by mechanical exfoliation method as the graphene platelet that induces graphene large-area growth, on SiO 2 Graphene films grown on substrates

[0022] Single-layer graphene was prepared from high-temperature cracked graphite by mechanical exfoliation using 3M's Scotch tape and transferred to SiO 2 Graphene thin film flakes on the substrate as induced graphene growth; SiO with graphene thin flakes 2 The substrate is placed in an ultra-high vacuum (6.0×10 -9 torr) heat treatment at 1000 oC for 5 minutes; subsequently, pass H at 800oC 2 with C 2 h 4 mixed gas, the SiO 2 Graphene flakes on the substrate induce graphene growth for 5 minutes; 2 A large area of ​​single-layer graphene was grown on the substrate ( figure 2 ).

[0023] Effect: SiO 2 It is an important dielectric material for contemporary silicon-based electronic devices and digital / logic circuits, directly on SiO 2 The growth of graphene films o...

Embodiment 2

[0024] Embodiment 2: Utilize the bilayer graphene prepared by chemical vapor deposition method as the graphene flakes that induce graphene large-area growth, prepare graphene film on polymer polyethylene terephthalate (PET) substrate

[0025] The polished and surface-treated 25um thick Cu sheet was placed in a high vacuum (1.0×10 -8 torr) was heat-treated at 1000 oC for 30 minutes; subsequently, through CH 4 Gas and H 2 Gas growth was performed for 2 minutes; the temperature was lowered to room temperature at a cooling rate of 15oC / min, thereby obtaining double-layer graphene on the Cu film. Transfer a small piece of graphene from Cu to polymer PET: Spin-coat a 500nm polymethylmethacrylate (PMMA) layer on the surface of the synthesized graphene, place the PMMA-coated graphene / Cu in a ferric nitrate solution to corrode the Cu film Drop, so as to obtain PMMA / graphene, then transfer PMMA / graphene to PET, and then dissolve PMMA with acetone, so that small pieces of double-laye...

Embodiment 3

[0028] Embodiment 3: The monolayer graphene prepared by mechanical exfoliation method is used as the graphene flake that induces graphene to grow in a large area, and grows graphene on a gold substrate

[0029] Using Scotch tape of 3M company to prepare single-layer graphene from high-temperature pyrolysis graphite by mechanical exfoliation method, and transfer it to Au substrate as graphene flakes that induce large-area growth of graphene on Au. The Au substrate loaded with graphene flakes is placed in the sputtering chamber, and carbon atoms are sputtered from the amorphous carbon target onto the Au substrate by sputtering method, so that the transferred graphene flakes induce Graphene was grown at a substrate temperature of 300 oC ( Figure 4 ).

[0030] Effect: The resources of precious metal materials such as gold are limited, while graphene has excellent mechanical strength and transparency. Directly coating a layer of graphene on the surface of gold can help protect p...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a preparation method for a graphene film. The method comprises the steps of putting small sheets of the in advance synthetic graphene film on a substrate, and growing the graphene film on the substrate by using the small sheets of the in advance synthetic graphene film as induced points for the growth of s large-area graphene film and adopting carbon atoms released by carbon atom-containing gas carbon source, solid carbon source, liquid carbon source or composite carbon source materials thereof. The graphene film can directly grow on the substrate of practical application graphene film, so that the graphene film needs not to be transferred when being used. The number of layers, the structure and the size of the prepared graphene film are easy to control; the temperature for growing the graphene film can be 0 DEG C-2000 DEG C; the prepared graphene film has excellent photoelectric characteristics and is suitable for large-scale manufacture of optoelectronic devices.

Description

technical field [0001] The invention relates to a graphene film, in particular to a preparation method of a graphene film. Background technique [0002] Graphene is a two-dimensional structure material composed of honeycomb single-layer carbon atoms, also known as single-layer graphite; in terms of physical properties, it is generally believed that the material with more than ten layers of graphene stacked is a three-dimensional structure of graphite, carbon nanotubes It is a one-dimensional nanomaterial made of graphene rolled into a barrel. Graphene has excellent two-dimensional electrical, optical, thermal, mechanical properties and chemical stability. Its unique two-dimensional structure and excellent crystallographic quality make it widely used in ultra-fast micro-nano optoelectronic devices, radio frequency devices, clean energy and various Sensors and other fields have important practical value. For example, electrons in graphene follow relativistic quantum mechanic...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C01B31/04C01B32/188
Inventor 徐明生陈红征施敏敏吴刚汪茫
Owner ZHEJIANG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com