Organic semiconductor thin film solar cell preparation method based on nickel oxide anode interface layer

Abstract

The invention discloses an organic semiconductor thin film solar cell preparation method based on a nickel oxide anode interface layer. The organic semiconductor thin film solar cell preparation method includes: placing nickel oxide block target materials and a transparent conductive substrate into a radio frequency magnetron sputtering device; sputtering in an argon atmosphere or an argon and oxygen mix atmosphere so as to obtain a transparent conductive substrate covered with nickel oxide film; then, mixing poly (3-hexylthiophene), [6,6]- phenyl-C61-methyl butyrate and chlorobenzene in an inert atmosphere, and stirring to obtain photosensitive coatings; coating the transparent conductive substrate covered with the nickel oxide film with the photosensitive coatings under the inert atmosphere; performing annealing treatment on the transparent conductive substrate so as to obtain a transparent conductive substrate covered with the nickel oxide film and photosensitive film in sequence; furthermore, using an electron beam evaporation method for lithium fluoride film and aluminum film evaporation on the surface of the transparent conductive substrate covered with the nickel oxide film and the photosensitive film in sequence; and finally, placing the transparent conductive substrate in the inert atmosphere to complete encapsulating and accordingly obtaining a target product. According to the organic semiconductor thin film solar cell preparation method based on the nickel oxide anode interface layer, production cost is low, and the nickel oxide film is large in area and good in quality.

Description

technical field [0001] The invention relates to a method for preparing a solar cell, in particular to a method for preparing an organic semiconductor thin film solar cell based on a nickel oxide anode interface layer. Background technique [0002] At present, the development and utilization of solar energy is one of the effective means to solve the energy crisis in the world. The main way is to directly convert solar energy into electrical energy through the photovoltaic effect. The silicon-based solar cells that realize this conversion process have entered the stage of industrial production and commercial application, but the further development of its application is limited due to the high production cost and high energy consumption of conversion devices, and the defects such as heavy metal pollution. For this reason, in order to solve this problem, people have made unremitting efforts, such as the Chinese invention patent application CN 101836307 A published on September ...

AI Technical Summary

Problems solved by technology

Although this solar cell preparation method avoids the defects of producing silicon-based solar cells to a certain extent, it still has the disadvantage that the high-power pulsed laser is expensive, which makes it difficult to reduce the production cost; and the p In the case of a large-area semiconductor layer, due to the uneven distribution of atoms on the surface of the target after vaporization, it is impossible to obtain a large-area uniform nickel oxide film.

At the same time, the surface atomic energy of the target after vaporization is less than 1eV, which also makes the quality of the formed nickel oxide film unsatisfactory.

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