Highly-doped ZnO:Co magnetic semiconductor film material and preparation method thereof

A technology for magnetic semiconductor and thin film materials, which is applied in the fields of information technology and spintronic materials, can solve the problems of low solid solubility of 3d transition metal doping, weak ferromagnetism, and reduced application value, etc., and achieves composition and preparation conditions. Precisely controllable, high vacuum, ensuring precise control and repeatable results

Inactive Publication Date: 2013-11-20
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Due to the low doping solid solubility of 3d transition metals, the ferromagnetism at room temperature is very weak, which reduces its practical application value.
Among the existing reported ZnO magnetic semiconductor materials, the solid solubility of general transition metal TM doped ZnO is less than 10%

Method used

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  • Highly-doped ZnO:Co magnetic semiconductor film material and preparation method thereof
  • Highly-doped ZnO:Co magnetic semiconductor film material and preparation method thereof
  • Highly-doped ZnO:Co magnetic semiconductor film material and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0052] Example 1: Zn 1-x co x Epitaxial preparation of O magnetic semiconductor film (x=0.20) and its room temperature ferromagnetism.

[0053] (1) Single crystal Al 2 o 3 (0001) Substrate pretreatment:

[0054] Select commercially purchased single crystal Al 2 o 3 (0001) substrates were ultrasonically cleaned in acetone, alcohol, and deionized water for 5 minutes, and dried with high-purity nitrogen. The substrate was first heated to 800°C for 30 minutes and annealed in a vacuum chamber, then cooled to room temperature; high-purity oxygen (purity 99.9995%) was passed through, the oxygen plasma source was ignited, and the substrate was heated to 800°C for 30 minutes for annealing. The background vacuum degree of molecular beam epitaxy vacuum chamber is 1~2×10 -9 mbar, the power of the oxygen plasma source is 350 watts, and the partial pressure of oxygen during operation is 3x10 -5 mbar.

[0055] (2) Preparation of low temperature ZnO buffer layer

[0056] The tempera...

Embodiment 2

[0059] Example 2: Zn 1-x co x Epitaxial preparation of O magnetic semiconductor film (x=0.25) and its room temperature ferromagnetism.

[0060] (1) Carry out single crystal Al by the method of embodiment 1 step (1) 2 o 3 (0001) Pretreatment of the substrate.

[0061] (2) Prepare the low-temperature ZnO buffer layer according to the method of step (2) of Example 1

[0062] (3) Continue to lower the substrate temperature to 400°C, and at the same time start the cold trap in the vacuum chamber of the growth chamber. By passing liquid nitrogen into the cold trap, the oxygen pressure during the growth was reduced to 16×10 -8 Ultra-low pressure of mbar, oxygen plasma source power up to 300 watts. The doping concentration of Co is determined by the relative molecular beam current of Co / Zn, which is measured by an in-situ quartz crystal oscillator. The temperature of the Zn evaporation source is maintained at 330°C, and the temperature of the Co evaporation source is maintained...

Embodiment 3

[0063] Example 3: Zn 1-x co x Epitaxial preparation of O magnetic semiconductor film (x=0.30) and its room temperature ferromagnetism.

[0064] (1) Carry out single crystal Al by the method of embodiment 1 step (1) 2 o 3 (0001) Pretreatment of the substrate.

[0065] (2) Prepare the low-temperature ZnO buffer layer according to the method of step (2) of Example 1

[0066] Continue to lower the substrate temperature to 400 °C, and at the same time start the cold trap in the vacuum chamber of the growth chamber. The oxygen pressure during growth was reduced to 10×10 by passing liquid nitrogen into the cold trap. -8 Ultra-low pressure of mbar, oxygen plasma source power up to 300 watts. The doping concentration of Co is determined by the relative molecular beam current of Co / Zn, which is measured by an in-situ quartz crystal oscillator. The temperature of the Zn evaporation source is maintained at 330°C, and the temperature of the Co evaporation source is maintained at 137...

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Abstract

The invention relates to a highly-doped ZnO:Co magnetic semiconductor film material and a preparation method thereof. The structural formula of the highly-doped ZnO:Co magnetic semiconductor film material is Zn1-xCoxO, wherein x=0.2-0.45. The Zn1-xCoxO magnetic semiconductor material with a monocrystal single-phase wurtzite lattice structure is prepared by an oxygen molecule beam epitaxy preparation method in a low-temperature ultralow-oxygen atmospheric pressure condition, and the maximum Co metal solid solubility reaches 45%. A Zn1-xCoxO magnetic semiconductor prepared by the method has ultrahigh room temperature ferromagnetism, maximum saturation magnetization of 530emu / cm<3>, maximum average atomic magnetic moment of 1.68muB / Co and a great room-temperature magneto-optic Kerr effect. The prepared Zn1-xCoxO magnetic semiconductor material can be used for spinning electronic devices.

Description

technical field [0001] The invention relates to a highly doped ZnO:Co magnetic semiconductor film material and a preparation method thereof, belonging to the fields of information technology and spintronics materials. Background technique [0002] ZnO, as a wide bandgap oxide semiconductor with a bandgap width of 3.7eV, has attracted much attention because of its broad application prospects in optoelectronic devices. Especially light-emitting diodes, laser diodes and ultraviolet light detectors in the range of ultraviolet to blue light have excellent application prospects and market value. ZnO-based magnetic semiconductors are multifunctional spintronics materials that integrate magnetic, semiconductor, and optoelectronic properties. Because of its additional magnetic properties and huge magneto-optical effect with ordinary semiconductors, it has potential important applications in spintronic devices such as spin photodiodes, spin transistors, and magnetic semiconductor tun...

Claims

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Application Information

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IPC IPC(8): H01F1/40H01F10/193H01F41/14H01L43/10H01L43/12C23C14/32C23C14/08
Inventor 刘国磊曹强颜世申梅良模陈延学
Owner SHANDONG UNIV
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