Method capable of improving conversion efficiency of crystalline silicon solar cell

Abstract

The invention discloses a method capable of improving conversion efficiency of a crystalline silicon solar cell. The method comprises steps that: (1), texturing on a silicon wafer is carried out, a PN junction is prepared through expansion, etching and cleaning are carried out, PECVD plating on an anti-reflective film is carried out; (2), rare earth ion implantation into the anti-reflective film is carried out; (3), after rare earth ion implantation, the silicon wafer is annealed in a high temperature furnace in a nitrogen atmosphere and is taken out to cool to a room temperature; and (4), screen printing of the silicon wafer is carried out to form an electrode, and a finished product of the crystalline silicon solar cell having light wave conversion characteristics is formed through sintering. According to the method, rare earth ions are doped on the anti-reflective film by utilizing the ion implantation technology, so the anti-reflective film has the light conversion characteristics, a photon utilization rate of the crystalline silicon solar cell in a high-energy ultraviolet area is improved, and thereby conversion efficiency of the cell is improved; the technology utilized in the method is simple and easy and can be linked with a manufacturing process of a cell in the prior art, reconstruction for equipment in the prior art is not needed, cost is saved, batch production is easily realized through the ion implantation technology, and the method has good feasibility.

Description

technical field

[0001] The invention relates to the technical field of production of crystalline silicon solar cells, in particular to a method capable of improving the conversion efficiency of crystalline silicon solar cells. Background technique

[0002] When the air quality is AM 1.5, the solar power received by the ground is 1000 W / m 2 Under the conditions of , the spectral distribution of sunlight on the earth's land surface extends from 0.3 μm in the ultraviolet to 2.5 μm in the infrared. Since the band gap of silicon is 1.1 eV (λ=1100 nm), generally speaking, the wavelength of light that responds well to silicon solar cells should be around 1.1 eV. Most of the ultraviolet photons above the forbidden band width are converted into lattice vibrations of silicon and emitted in the form of heat energy, while photons below the forbidden band width cannot be absorbed by semiconductor silicon to generate electron-hole pairs, so it is currently possible to The spectral range...

Images