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A method for large-scale growth of zno nanoarrays on metal or metal alloy surfaces

A metal alloy, nanoarray technology, applied in nanotechnology, metal material coating process, solid-state chemical plating and other directions, can solve the problems affecting the application performance of materials, high energy consumption, high reaction temperature, and achieve good photocatalytic activity, The effect of improving hydrophilicity and avoiding oxidation of metals or metal alloys

Inactive Publication Date: 2015-07-29
SHAANXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In the preparation method of the above-mentioned ZnO nanocolumn / wire, there are high reaction temperature, high energy consumption, and when a general metal or metal alloy is used as the substrate, it is easy to cause oxidation of the substrate and affect the application performance of the material.
The Chinese patent application with the application number 200910203556.X discloses "a method for preparing a ZnO nanowire array", which proposes to form a seed layer of silver or copper on the substrate by vacuum evaporation or vacuum sputtering, or The seed layer of silver is formed on the substrate by chemical method. Although high temperature treatment is not required, there is a problem of crystal contamination due to the introduction of copper or silver.
And the Chinese patent application that application number is 201210016269.X discloses " the method for the ZnO nano-cone or the nano-rod array of preparation and control surface roughness ", and this method proposes to adopt the method for normal temperature sputtering to prepare ZnO seed layer on the substrate, Although it can effectively avoid crystal contamination, it is somewhat stretched when applied to large-scale preparation of ZnO nanoarrays
In addition, there are reports on the preparation of ZnO nanorod arrays directly on the surface of zinc foil by low-temperature hydrothermal process [Wang Y X, Li X Y, Lu G, et al. Highly Oriented 1-D ZnO Nanorod Arrays on Zinc Foil: Direct Growth from Substrate, Optical Properties and Photocatalytic Activities. J. Phys. Chem. C, 2008, 112(19), 7332-7336.], but this method is limited to the use of substrates with a high lattice ratio of ZnO

Method used

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  • A method for large-scale growth of zno nanoarrays on metal or metal alloy surfaces
  • A method for large-scale growth of zno nanoarrays on metal or metal alloy surfaces

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044] Step 1: Cleaning of the substrate:

[0045] Place 1×2cm aluminum alloy in acetone, absolute ethanol, and deionized water for 15 minutes to ultrasonically clean, dry, and set aside.

[0046] Step 2: Preparation of ZnO precursor sol:

[0047] 0.033g of zinc acetate dihydrate, 0.023g of stabilizer and 11g of absolute ethanol were weighed, mixed, and ultrasonically dispersed for 30 minutes to prepare a ZnO precursor sol.

[0048] The stabilizer is triethanolamine.

[0049] Step 3: Preparation of the seed layer:

[0050]By the method of dipping and pulling, a layer of ZnO precursor sol in step 2 is coated on the substrate cleaned in step 1, dried at 60°C, repeated 3 times in sequence, and placed under a 300W ultraviolet lamp for 40 minutes to obtain ZnO seed layer.

[0051] The amount of ZnO precursor sol used in the dipping and pulling method depends on the size of the substrate, just submerge the substrate. When the ZnO seed layer is prepared by irradiating with an ul...

Embodiment 2

[0056] Step 1: Cleaning of the substrate:

[0057] Place 1×2cm aluminum alloy in acetone, absolute ethanol, and deionized water for 15 minutes to ultrasonically clean, dry, and set aside.

[0058] Step 2: Preparation of ZnO precursor sol:

[0059] 0.055 g of zinc acetate dihydrate, 0.050 g of stabilizer and 11 g of absolute ethanol were weighed, mixed, and ultrasonically dispersed for 30 min to prepare a ZnO precursor sol.

[0060] The stabilizer is a compound mixture of triethanolamine and formamide, and the molar ratio of the two is 1:1.

[0061] Step 3: Preparation of the seed layer:

[0062] By the method of dipping and pulling, a layer of ZnO precursor sol in step 2 is coated on the substrate cleaned in step 1, dried at 60°C, repeated 3 times in sequence, and placed under a 300W ultraviolet lamp for 40 minutes to obtain ZnO seed layer.

[0063] The amount of ZnO precursor sol used in the dipping and pulling method depends on the size of the substrate, just submerge th...

Embodiment 3

[0068] Step 1: Cleaning of the substrate:

[0069] Place 1×2cm aluminum alloy in acetone, absolute ethanol, and deionized water for 15 minutes to ultrasonically clean, dry, and set aside.

[0070] Step 2: Preparation of ZnO precursor sol:

[0071] 0.077g of zinc acetate dihydrate, 0.033g of stabilizer and 11g of absolute ethanol were weighed, mixed, and ultrasonically dispersed for 30min to prepare a ZnO precursor sol.

[0072] The stabilizer is formamide.

[0073] Step 3: Preparation of the seed layer:

[0074] By the method of dipping and pulling, a layer of ZnO precursor sol in step 2 is coated on the substrate cleaned in step 1, dried at 60°C, repeated 3 times in sequence, and placed under a 300W ultraviolet lamp for 40 minutes to obtain ZnO seed layer.

[0075] The amount of ZnO precursor sol used in the dipping and pulling method depends on the size of the substrate, just submerge the substrate. When the ZnO seed layer is prepared by irradiating with an ultraviolet ...

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Abstract

The invention relates to a method for large-scale growth of ZnO nanometer arrays on the surface of metal or metal alloy. Most of the methods for preparing ZnO nanoarrays have defects such as expensive equipment, complicated operation, catalyst contamination, and low crystal quality. The invention ultrasonically cleans the metal or metal alloy substrate; mixes zinc acetate dihydrate, stabilizer and absolute ethanol to prepare ZnO precursor sol; then coats the ZnO precursor sol on the substrate, and after drying, irradiates with ultraviolet light to obtain ZnO The seed crystal layer; the substrate of the seed crystal layer faces down and is placed in a zinc salt solution to grow obliquely. The invention adopts the method of irradiating the ultraviolet lamp to process the seed layer, avoiding the oxidation of the substrate due to high temperature treatment; the ZnO nano-array grows under the hydrothermal condition of 90°C, without special treatment, and the operation process is simple; the prepared ZnO nano-array is treated with organic dyes The photocatalytic degradation of wastewater can avoid the secondary agglomeration of the catalyst, exhibit good photocatalytic activity, and can be used many times.

Description

technical field [0001] The invention relates to a method for growing ZnO nanometer arrays, in particular to a method for growing ZnO nanometer arrays on the surface of metal or metal alloy on a large scale. Background technique [0002] As a semiconductor with a wide band gap, ZnO has a large conduction band width, high electron excitation binding energy and optical gain coefficient at room temperature. One-dimensional ZnO nanoarrays have shown good potential in the fields of energy, sensing, field emission, optics, photocatalysis, etc. due to their large specific surface area, high surface activity, and unique electrical, optical, and chemical properties. Application prospects. The use of ZnO nanoarrays as photocatalysts to degrade organic dye wastewater can effectively avoid the secondary agglomeration of catalysts in suspension and can be used many times, so it has attracted much attention. [0003] At present, the methods for preparing ZnO nanoarrays mainly include ga...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C20/08B82Y40/00
Inventor 马建中张永辉鲍艳
Owner SHAANXI UNIV OF SCI & TECH