Method for preparing polysilicon thin film
A polysilicon thin film and thin film technology, which is used in the manufacture of semiconductor/solid-state devices, electrical components, circuits, etc., can solve the problems of discrete distribution of electrical characteristics, uneven electrical characteristics, and uneven brightness.
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Embodiment 1
[0044] This embodiment provides a method of forming a polysilicon film with bridged grain (BG) lines, including:
[0045] 1) A layer of PR 1075 photoresist is spin-coated on the surface of the polysilicon film. After the PR photoresist is spin-coated, the sample is heated to 90 degrees for soft baking. The heating time is 1 minute. The purpose of the soft baking is to reduce the photoresist. The solvent is from -20% to 5%, and the stress that induces the spin-coated film is released at the same time. After soft baking, use the ASM PAS5000 stepper lithography machine to expose the photoresist under the wavelength of 365nm light, and roast at 110℃ After 1 minute, the sample is then immersed in FHD-530 seconds for development. The photoresist exposed to the light is dissolved in the dissolving solution, and the part that is not exposed to the light remains as it is, so that the BG line pattern is transferred to the light On the resist (e.g. image 3 As shown), a BG line pattern with...
Embodiment 2
[0052] The BG line pattern can also be realized by laser interference lithography (LIL), which is easy to realize on a large-area substrate without the need for a mask. Laser interference lithography (LIL) is the preferred method for producing periodic and quasi-periodic patterns on a larger area substrate.
[0053] Use based on Figure 5 Lloyd's interference device shown. The regular pattern is composed of an interference laser beam and a reflected laser beam. Since the second laser beam is formed by a mirror very close to the substrate, such an arrangement is less sensitive to vibration than a true two-beam interference arrangement. The period of the interference pattern and the grating recording of the resist layer on the substrate are determined by the formula P=λ / (2sinθ). Using 363.8nm light source, the period of 300nm to 1000nm can be easily adjusted.
[0054] This embodiment provides a method of forming a polysilicon film with bridged grain (BG) lines, including:
[0055] ...
Embodiment 3
[0063] Another way to achieve small-size BG line patterns is nanoimprint lithography (NIL) technology. NIL is a simple photolithography process with low cost, high mass production and high resolution. It is patterned through mechanical deformation of the imprint on the resist and subsequent processes. The imprint of a resist is usually formed by printing a monomer or polymer formulation in a thermal or ultraviolet curing process.
[0064] The principle of NIL is as Picture 9 As shown, a hard mold with a nano-scale undulating surface is pressed into the polymer material on the substrate to form a contrast of height and undulation on the polymer material. The thin residual layer of polymer material is intentionally left under the protruding part of the mold as a soft buffer layer to prevent the hard mold from directly affecting the substrate, while also effectively protecting the fine nano-scale undulating surface of the mold surface and the surface of the device . After NIL tr...
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Abstract
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