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Chemical method for manufacturing barium strontium titanate dielectric thin film on GaAs substrate

A technology based on gallium arsenide and barium strontium titanate, which is applied in the manufacturing of circuits, electrical components, semiconductor/solid-state devices, etc. and other problems, to achieve the effect of being conducive to commercial application, good crystallization quality, and low cost of raw materials

Active Publication Date: 2015-03-18
THE HONG KONG POLYTECHNIC UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The technical problem to be solved by the present invention is that there is an interface growth incompatibility between the above-mentioned ferroelectric material strontium barium titanate and the binary compound gallium arsenide in the prior art, which makes it impossible to grow high-quality functional oxides on gallium arsenide. Defects of barium strontium titanate dielectric film, providing a chemical method for preparing barium strontium titanate dielectric film on gallium arsenide substrate

Method used

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  • Chemical method for manufacturing barium strontium titanate dielectric thin film on GaAs substrate
  • Chemical method for manufacturing barium strontium titanate dielectric thin film on GaAs substrate
  • Chemical method for manufacturing barium strontium titanate dielectric thin film on GaAs substrate

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Embodiment 1

[0030] Embodiment one: The specific steps of the chemical method for preparing the barium strontium titanate dielectric film on the gallium arsenide substrate are as follows:

[0031] S1. Pretreatment of gallium arsenide (GaAs) substrate:

[0032] Surface treatment of the GaAs substrate, firstly use trichlorethylene solution, acetone solution and alcohol solution to ultrasonically clean the GaAs substrate, each time for 5 minutes; then use deionized water to clean the GaAs substrate for 5 minutes, and then With hydrofluoric acid (HF) solution (HF:H 2 O=l:50) Clean the GaAs substrate for 1 minute, remove the oxide layer on the surface of the GaAs substrate, and use nitrogen (N 2 ) to dry the GaAs substrate; then send the dried GaAs substrate into the vacuum chamber of the RIE reactive ion etching machine, and perform ion etching in a mixed gas with a volume ratio of nitrogen and argon of 4:1 for 10 minutes, The sputtering power of the RIE reactive ion etching machine is 50 ...

Embodiment 2

[0065] Embodiment two: The steps of preparing barium strontium titanate dielectric film on gallium arsenide substrate are as follows:

[0066] S1, pretreatment of GaAs substrate: same as step S1 in the first embodiment;

[0067] S2, preparation of barium strontium titanate sol: same as step S2 in the first embodiment;

[0068] S3, film formation by throwing glue:

[0069] Put the gallium arsenide substrate after the surface treatment in the above step S1 on a homogenizer, and then add the barium strontium titanate sol solution prepared in the above step S2 dropwise on the gallium arsenide substrate after the surface treatment in the above step S1 On the chip, start the glue homogenizer to drive the gallium arsenide substrate to rotate. At a speed of 2500 rpm, shake the glue for 30 seconds; The strontium barium titanate sol was wiped dry and left for 15 minutes to fully gel the strontium barium titanate sol on the gallium arsenide substrate.

[0070] S4, drying: same as st...

Embodiment 3

[0079] Embodiment three: The steps of preparing barium strontium titanate dielectric film on gallium arsenide substrate are as follows:

[0080] S1, pretreatment of GaAs substrate: same as step S1 in the first embodiment;

[0081] S2, preparation of barium strontium titanate sol: same as step S2 in the first embodiment;

[0082] S3, film formation by throwing glue:

[0083] Put the gallium arsenide substrate after the surface treatment in the above step S1 on a homogenizer, and then add the barium strontium titanate sol solution prepared in the above step S2 dropwise on the gallium arsenide substrate after the surface treatment in the above step S1 On the chip, start the glue homogenizer to drive the gallium arsenide substrate to rotate. At a speed of 3500 rpm, shake the glue for 30 seconds; The strontium barium titanate sol was wiped dry and left for 15 minutes to fully gel the strontium barium titanate sol on the gallium arsenide substrate.

[0084] S4, drying: same as ...

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Abstract

The invention discloses a chemical method for manufacturing a barium strontium titanate dielectric thin film on a GaAs substrate, which comprises the following steps: S1, surface treatment is carried out on the GaAs substrate so as to form As atoms with a flat atomic level as a cleaning surface of an end surface; S2, a barium strontium titanate sol is prepared; S3, the barium strontium titanate sol solution prepared in the second step is dripped on the GaAs substrate obtained in the first step, and spinning is carried out; S4, drying is carried out; S5, baking pre-treatment is carried out; S6, the GaAs substrate after baking pre-treatment in the fifth step is placed in a quartz tube and in a protection atmosphere of a certain proportion, annealing treatment is carried out at a specific temperature, and the barium strontium titanate dielectric thin film is manufactured. According to the barium strontium titanate dielectric thin film manufactured by adopting the chemical method of the invention, the crystallization quality is good, the surface is flat, the dielectric performance keeps stable along with the frequency, the dielectric constant is higher than 250 in 100KHz to 1MHz range, and the manufacturing demands for metal oxide semiconductor field effect transistors can be met in the structure.

Description

technical field [0001] The invention relates to the technical field of ferroelectric performance materials, in particular to a chemical method for preparing barium strontium titanate dielectric thin films on gallium arsenide substrates. Background technique [0002] Gallium arsenide (GaAs) has the characteristics of high electron mobility, wide band gap and high shock electric field, and has become an important material for the preparation of high-speed and high-power solid-state devices. In recent years, people have been hoping to integrate ferroelectric functional oxide dielectric thin film materials, such as barium strontium titanate (BST), with GaAs materials to form GaAs-based metal oxide semiconductor field effect transistors (MOSFETs). Using the polarization, electro-optic, piezoelectric, dielectric tunable properties of ferroelectric materials and GaAs high mobility, direct band gap and other properties, develop multifunctional, integrated, high-frequency semiconduct...

Claims

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Application Information

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IPC IPC(8): H01L21/02H01L21/336
CPCH01L21/02107H01L21/02225H01L21/02227H01L21/324H01L29/66477
Inventor 魏贤华黄文郝建华
Owner THE HONG KONG POLYTECHNIC UNIV
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