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Preparation method of low-resistance low-additive conductive thin film

A conductive film and additive technology, which is applied in the direction of cable/conductor manufacturing, circuits, electrical components, etc., can solve the problems of poor durability, high volume resistivity, large amount of conductive materials added to conductive films, etc., and achieve good conductivity and volume The effect of small resistivity and small amount of addition

Inactive Publication Date: 2015-04-29
XIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a method for preparing a conductive film with low resistance and low additives, which solves the problems of large amount of conductive material, poor durability and large volume resistivity of the conductive film obtained by the existing preparation method

Method used

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Examples

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Effect test

preparation example Construction

[0020] The preparation method of the low-resistance and low-additive conductive film of the present invention is specifically implemented according to the following steps:

[0021] Step 1, the AgNO 3 3~7 parts (mass parts), 5~9 parts of polyvinylpyrrolidone (mass parts) and concentration are 5×10 -3 mol / LFeCl 3 500-800 parts (mass parts) of ethylene glycol solution, stirred and dissolved at 70°C for 40-50 minutes, then reacted at 140-160°C for 80-100 minutes, cooled, washed with acetone, deionized water, centrifuged Obtain silver nanowires;

[0022] The obtained nano-silver has a diameter of 70-120 nm, a length of 20-40 μm, an aspect ratio of 170-570, and a very small amount of granular nano-silver.

[0023] Step 2, 20-30 parts (by mass) of silver nanowires, 10-20 parts (by mass) of cellulose nanocrystals, 50-70 parts (by mass) of polyalcohol / ether dimethacrylate and acrylic acid Butyl ester (the mass ratio of dimethacrylate polyalcohol / ether to butyl acrylate is 1:3~3:1) ...

Embodiment 1

[0026] (1) 0.5g AgNO 3 , 0.7g polyvinylpyrrolidone (PVP) and a concentration of 5×10 -3 mol / LFeCl 3 70ml of ethylene glycol solution, stirred and dissolved at 70°C for 40min, then heated to 160°C for 80min at a constant temperature, cooled to room temperature naturally, washed with acetone to remove PVP, then fully washed with deionized water, and centrifuged , to obtain silver nanowires;

[0027] The diameter is between 60-110nm, the length is between 20-40μm, the aspect ratio is 180-500, and the amount of granular nano-silver is quite small.

[0028] (2) 15 parts of nano-silver wires, 20 parts of cellulose nanocrystals, 63 parts of polyethylene glycol 200 dimethacrylic acid and butyl acrylate (mass ratio of polyethylene glycol 200 dimethacrylic acid and butyl acrylate is 1:3) Mix evenly, blow nitrogen to remove water and oxygen, seal in the mold, add 2 parts of azobisisobutyronitrile (AIBN) at 70°C for 40 minutes to catalytically cure to obtain a conductive film with a vo...

Embodiment 2

[0030] (1) 0.3g AgNO 3 , 0.4g polyvinylpyrrolidone (PVP) and a concentration of 5×10 -3 mol / LFeCl 3 60ml of ethylene glycol solution was stirred and dissolved at 70°C for 45min, then heated to 140°C for 90min at a constant temperature, cooled to room temperature naturally, the obtained product was first washed with acetone to remove PVP, then fully washed with deionized water, and centrifuged. Obtain silver nanowires;

[0031] The diameter is between 70-120nm, the length is between 20-30μm, the aspect ratio is 170-300, and the amount of granular nano-silver is quite small.

[0032] (2) 20 parts of nano-silver wires, 10 parts of cellulose nanocrystals, 68 parts of polyethylene glycol 500 dimethacrylic acid and butyl acrylate (mass ratio of polyethylene glycol 500 dimethacrylic acid and butyl acrylate is 1:2) Mix evenly, blow nitrogen to remove water and oxygen, seal in the mold, add 2 parts of azobisisobutyronitrile (AIBN) at 70°C for 60 minutes to catalyze curing to obtain ...

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Abstract

The invention discloses a preparation method of a low-resistance low-additive conductive thin film. A reaction is conducted after stirring and dissolving are carried out on an ethylene glycol solution of AgNO3, PVP and FeCl3. A nanometer silver wire is obtained after cooling, acetone washing, deionized water washing and centrifuging are carried out. Even mixing is carried out on the nanometer silver wire, cellulose nanocrystalline, dimethylacrylic acid polyol / polyether and butyl acrylate. Dehydration and the deoxygenization are carried out by injecting nitrogen, and the mixture is sealed in a mould. The low-resistance low-additive conductive thin film is obtained after catalytic curing is conducted through azodiisobutyronitrile. According to the preparation method of the conductive thin film, a compound of the cellulose nanocrystalline, the dimethylacrylic acid polyol / polyether and a butyl acrylate copolymer is used as a base material, the base material has the percolation network of hydrogen bonds and the entropy elasticity of highly cross-linked high molecules, and therefore the thin film has the breaking resistance and the high elasticity. The prepared conductive thin film has the advantages that the additive amount of conductive materials is low, the electric conducting capability is good, and the volume resistivity is low.

Description

technical field [0001] The invention relates to a method for preparing a conductive film, in particular to a method for preparing a conductive film with low resistance and low additives. Background technique [0002] Conductive film has good insulation and heat resistance, high mechanical strength, transparency and airtightness, especially flexural resistance and high elasticity. The traditional preparation methods mainly include magnetron sputtering, sol-gel, pulse Laser deposition, vacuum evaporation, chemical vapor deposition, etc., the preparation process is complex, the conditions are harsh, the environment is polluted, and the risk is high, which does not meet the requirements of modern industrial technology, and the conductive film obtained has a relatively large amount of conductive material and poor durability. , volume resistivity and so on. [0003] Nanoparticles are sensitive to external stimuli due to their large specific surface area and high activity. Change...

Claims

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Application Information

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IPC IPC(8): H01B13/00
Inventor 侯成敏
Owner XIAN UNIV OF TECH
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