Preparation method of tris(trimethylsilyl)phosphite
A technology of trimethylsilyl and phosphite, applied in chemical instruments and methods, compounds of Group 5/15 elements of the periodic table, organic chemistry, etc., can solve the problems of slow reaction speed, unsatisfactory, harsh applications, etc. , to achieve the effect of rapid reaction, high product quality and simple separation
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Examples
Embodiment 1
[0021] Example 1: Select tetrahydrofuran as the solvent, add potassium trimethylsiliconate and phosphorus trichloride to the above solvent at a molar ratio of 1:1, stir vigorously during the addition, and filter to remove the chloride Potassium, the above solution is distilled under reduced pressure at 90°C / 20mmHg to obtain the target product, and the purity of the target product can reach more than 99.8%.
Embodiment 2
[0022] Example 2: Select tetrahydrofuran as the solvent, add potassium trimethylsiliconate and phosphorus tribromide to the above solvent at a molar ratio of 1:1, stir vigorously during the addition, and filter to remove the bromide Potassium, the above solution is distilled under reduced pressure at 90°C / 20mmHg to obtain the target product, and the purity of the target product can reach more than 99.7%.
Embodiment 3
[0023] Example 3: Select tetrahydrofuran as the solvent, add sodium trimethylsiliconate and phosphorus trichloride to the above solvent at a molar ratio of 1:1, stir vigorously during the addition, and filter to remove the chloride Sodium, the above solution is distilled under reduced pressure at 90°C / 20mmHg to obtain the target product, and the purity of the target product can reach more than 99.7%.
PUM
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com