Poly-n-butyl methacrylate/polyvinylidene fluoride vinyl compound dielectric film and preparation method thereof

A technology of poly-n-butyl methacrylate and composite dielectric film, which is applied in the field of composite dielectric film, can solve the problems of increased dielectric loss, complicated preparation process, poor polymer compatibility, etc., and achieves increased dielectric constant, The effect of simple preparation process and stable dielectric properties

Active Publication Date: 2015-09-02
BEIJING UNIV OF CHEM TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

A single dielectric material has been difficult to meet the needs of industrialization, so the preparation of polymer-based composite materials with high dielectric properties is of great significance. At present, polymer-based dielectric materials are mainly divided into the following three types: (1). Inorganic Ceramic materials: such as barium titanate (BaTiO 3 ), the capacitance is large, the dielectric constant is as high as 6300, but the material has high sintering temperature, complicated preparation process, brittleness, high processing requirements, poor compatibility with polymers, difficult film formation, and poor mechanical properties
(2). Conductive material: Graphene is added to PVDF as a filler to form a composite material. At 1000Hz, the dielectric constant of the composite material is more than three times that of the PVDF matrix, but the composite material will be affected by the percolation threshold, which is close to the percolation threshold. At the same time, the dielectric loss will be greatly improved, and the dielectric material will suddenly change into a conductive material, which will seriously affect its production and application.
(3). Organic composite materials: such as polystyrene (PS), prepared PSAN film by solution coating method, the dielectric constant of the film is 4, the dielectric loss is 0.027, and the energy storage density reaches 6.8J / cm 3 , good flexibility, low dielectric loss, but the dielectric constant is too small

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] a. After mixing 0.0100g of organic PBMA, 0.1000g of polyvinylidene fluoride-trifluoroethylene copolymer [P(VDF-TrFE)] and 1.0005g of solvent DMF, ultrasonically stir and disperse evenly to form a stable sol. For: organic PBMA 10%, polymer 90%;

[0025] b. The sol prepared in step a was cast on a mold at 80°C to form a film, dried for 18 hours; then cooled naturally and annealed at 120°C for 8 hours to prepare a PBMA / P(VDF-TrFE) composite dielectric film. At 1000Hz, the dielectric constant can reach 16, the dielectric loss is 0.21, and the breakdown field strength is 322MV / m.

Embodiment 2

[0027] a. After mixing 0.0200g of organic PBMA, 0.1000g of polyvinylidene fluoride-trifluoroethylene copolymer [P(VDF-TrFE)] and 1.0005g of solvent DMF, ultrasonically stir and disperse evenly to form a stable sol. For: organic PBMA is 20%, polymer is 80%;

[0028] b. The sol prepared in step a was cast on a mold at 80°C to form a film, dried for 18 hours; then cooled naturally and annealed at 120°C for 8 hours to prepare a PBMA / P(VDF-TrFE) composite dielectric film. At 1000Hz, the dielectric constant can reach 23, the dielectric loss is 0.29, and the breakdown field strength is 243 MV / m.

Embodiment 3

[0030] a. After mixing 0.0300g of organic PBMA, 0.1000g of polyvinylidene fluoride-trifluoroethylene copolymer [P(VDF-TrFE)] and 1.0005g of solvent DMF, ultrasonically stir and disperse evenly to form a stable sol. For: organic PBMA is 30%, polymer is 70%;

[0031] b. The sol prepared in step a was cast on a mold at 80°C to form a film, dried for 18 hours; then cooled naturally and annealed at 120°C for 8 hours to prepare a PBMA / P(VDF-TrFE) composite dielectric film. At 1000Hz, the dielectric constant can reach 21, the dielectric loss is 0.30, and the breakdown field strength is 259MV / m.

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Abstract

The invention discloses a poly-n-butyl methacrylate (PBMA) / polyvinylidene fluoride vinyl compound dielectric film. The film is formed by performing mixing and tape casting on florin-containing polymer and organic PBMA. The compound dielectric film is composed of, by mass percent, the components of 10%-30% of the organic PBMA and 70%-90% of the florin-containing polymer. The compound dielectric film is novel dielectric materials which are high in dielectric constant and low in dielectric loss. The compound dielectric film with the needed dielectric constant can be prepared by controlling the filler appending proportion. The compound dielectric film is simple in preparation technology, low in compound temperature and friendly to environment, and has a wide application prospect.

Description

technical field [0001] The invention belongs to the field of composite dielectric films, in particular to a polyn-butyl methacrylate (PBMA) / polyvinylidene fluoride-based composite dielectric film. Background technique [0002] Polymer-based dielectric materials with high dielectric constant and low dielectric loss are widely used because of their great potential in storing electrical energy, such as communication equipment, charge storage capacitor systems, artificial muscles, brakes, and aerospace military. . Traditional dielectric materials include inorganic ceramic materials and organic polymer materials. Common inorganic ceramic materials, such as barium titanate (BaTiO3), copper calcium titanate (CCTO), lead zirconate titanate (PZT), etc., have very high dielectric constants, but their preparation process is complex, brittle and dielectric The loss is large. Common organic polymer materials include polyethylene, polypropylene, polytrifluoroethylene, epoxy resin, etc....

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08L27/16C08L33/10C08J5/18
CPCC08J5/18C08J2327/16C08J2433/10C08L27/16C08L2203/16C08L33/10
Inventor 王芳辉孔艳朱红
Owner BEIJING UNIV OF CHEM TECH
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