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A kind of silicon-based solar cell and single crystal silicon chip passivation method thereof

A single-crystal silicon wafer and single-crystal silicon technology, applied in circuits, photovoltaic power generation, electrical components and other directions, can solve the problems of poor passivation stability of iodine, poor passivation effect, and high growth temperature, and achieve a high level of technology. More flexibility, cheaper raw material cost, simple operation effect

Active Publication Date: 2017-10-20
SHAANXI NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, these methods all have deficiencies in varying degrees. The stability of iodine passivation is not good; the silicon dioxide grown by thermal oxidation passivation needs high temperature and long growth cycle, which requires high equipment; plasma-enhanced chemical vapor deposition deposition The growth temperature required for silicon nitride film is also high and the passivation effect is not very good

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  • A kind of silicon-based solar cell and single crystal silicon chip passivation method thereof

Examples

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example 1

[0031] A silicon-based solar cell and its monocrystalline silicon wafer, comprising the steps of:

[0032] 1) Cleaning of monocrystalline silicon wafers: monocrystalline silicon wafers can undergo dry cleaning and wet cleaning, and can also be supplemented by ultrasonic cleaning. This preferred implementation of the improved wet cleaning method is an example. The silicon wafer used is purchased from the manufacturer without any treatment, and the size is 125mm×125mm: ①The silicon wafer is pre-cleaned first, and the volume ratio is ammonia water: hydrogen peroxide: ultrapure water = 1:1.5:10 pre-cleaning solution , soaked at 75°C for 10 minutes; ② soaked in 70°C ultrapure water for 10 minutes; ③ soaked in 75°C with a volume ratio of 20% potassium hydroxide for 1 minute; ④ soaked in 70°C ultrapure water for 10 minutes; ⑤ soaked in 80°C , single crystal texturing for 30 minutes; ⑥Soak in ultrapure water at 70°C for 10 minutes; ⑦Use a volume ratio of ammonia water:hydrogen peroxi...

example 2

[0037] A silicon-based solar cell and its monocrystalline silicon wafer, comprising the steps of:

[0038]1) Cleaning of monocrystalline silicon wafers: monocrystalline silicon wafers can undergo dry cleaning and wet cleaning, and can also be supplemented by ultrasonic cleaning. This optimal implementation of dry cleaning method is an example ① silicon wafers first pass through the cleaning solution with a volume ratio of hydrochloric acid: hydrofluoric acid: ultrapure water = 1:1.5:10, soak at 75 °C for 10 minutes; ② soak in ultrapure water at 70 °C ③Take out the monocrystalline silicon wafer and dry it with nitrogen gas; ④Leave it in a sealed UV light box for 30 minutes.

[0039] 2) Preparation of hydrogenated amorphous silicon germanium passivation layer: put the clean single crystal silicon wafer into the vacuum chamber of the plasma-enhanced chemical vapor deposition system to preheat for 40min, the chamber temperature is 300°C, and the silicon wafer substrate temperature...

example 3

[0042] A silicon-based solar cell and its monocrystalline silicon wafer, comprising the steps of:

[0043] 1) Cleaning of monocrystalline silicon wafers: monocrystalline silicon wafers can undergo dry cleaning and wet cleaning, and can also be supplemented by ultrasonic cleaning. The preferred implementation of the improved wet cleaning method is supplemented by ultrasound as an example. The silicon wafers used were purchased from the manufacturer without any treatment, and the size was 125mm×125mm: ① monocrystalline silicon wafers were soaked in ultra-pure water at 70 °C for 10 min; ② soaked in 20% potassium hydroxide at 75 °C for 1 min; ③ Ultrasonic immersion in 70°C ultrapure water for 10 minutes; ④ At 80°C, single crystal texturing for 30 minutes; ⑤ Ultrasonic immersion in 70°C ultrapure water for 10 minutes; ⑥ Use the volume ratio of ammonia water: hydrogen peroxide: ultrapure water = 1:1.5:10 washing solution, soak at 75°C for 10 minutes; ⑦Use ultrasonic immersion in 70...

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Abstract

The invention provides a silicon-based solar cell and a monocrystalline silicon piece passivation method thereof. The method comprises the following steps of 1) cleaning of a monocrystalline silicon piece in which the monocrystalline silicon piece is cleaned to remove a oxide layer, metal ions and organic matters at the surface of the monocrystalline silicon piece; 2) dehydration of the monocrystalline silicon piece in which the cleaned monocrystalline silicon piece is dried and dehydrated; and 3) deposition of hydrogenated amorphous silicon germanium in which the dried monocrystalline silicon piece is placed in a plasma enhanced chemical vapor deposition system and preheated at the deposition temperature of 180 to 220 DEG C and the plasma excitation power of 10 to 20W, hydrogenated amorphous silicon germanium is deposited at the two sides of the monocrystalline silicon piece in the atmosphere of silane, germane and hydrogen, and passivation of the monocrystalline silicon piece is completed. According to the passivation method of the invention, the whole passivation process can be realized in the environment of 180 to 220 DEG C, and thermal damage is reduced; and the plasma excitation power in the whole passivation process ranges from 10 to 20W, plasma damage is reduced, the minority carrier life is high, and the passivation effect is good.

Description

technical field [0001] The invention relates to the field of silicon-based solar cell preparation, in particular to a silicon-based solar cell and a passivation method for a single crystal silicon wafer. Background technique [0002] In recent years, with the development of research and production technology, solar cells will play a major role in the field of traditional energy. The current market mainly includes silicon-based solar cells, multi-component compound thin-film solar cells, and organic dye-sensitized solar cells. Among them, silicon-based solar cells have become the leading product of solar cells due to their advantages in raw material reserves, maintaining a market share of more than 80%. Compared with other types of solar cells, its scientific research and production are relatively mature and stable, and its photoelectric conversion efficiency is relatively high. In the next few years, the huge demand for photovoltaic power generation in various countries aro...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L31/0216
CPCH01L31/02167H01L31/1868Y02E10/50Y02P70/50
Inventor 刘生忠刘斌
Owner SHAANXI NORMAL UNIV
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