Perovskite solar cell based on undoped organic hole transport layer and preparation method
A technology of hole transport layer and solar cell, which is applied in the direction of circuits, photovoltaic power generation, electrical components, etc., can solve the problems of lack of device structure and preparation technology, reduce the probability of charge recombination at the interface, etc., achieve large-area thin film preparation, avoid The effect of reducing the probability of occurrence of device life problems
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
preparation example Construction
[0048] see figure 2 and image 3 , a method for preparing a perovskite solar cell based on an undoped organic hole transport layer, comprising the following steps:
[0049] Step 1, cleaning the glass substrate with the fluorine-doped tin oxide FTO cathode and drying it with a nitrogen gun;
[0050] Step 2, Diisopropyl diacetylacetonate titanate TiAc solution with a mass fraction of 75% was diluted with 1-butanol, and the diluted solution was sonicated for 10-20 minutes to obtain 0.15mol / L and 0.3mol / L c-TiO 2 Precursor solution;
[0051] Step 3, c-TiO 2 The precursor solution is spin-coated on the fluorine-doped tin oxide FTO cathode glass substrate, including the first spin-coating of c-TiO with a concentration of 0.15mol / L on the cleaned substrate. 2 Precursor solution, the spin coating speed is 5000r / min, the spin coating time is 55s, and annealed on a hot stage at a temperature of 100-500°C for 5-20min;
[0052] Step 4, and then spin-coated c-TiO with a concentratio...
Embodiment 1
[0062] Fabricate a solar cell with a 2TPATPE hole transport layer thickness of 100nm.
[0063] Step 1, cleaning the substrate substrate;
[0064] Place the 1.9mm glass substrate with fluorine-doped tin oxide FTO in deionized water, acetone, absolute ethanol and deionized water for 10 minutes, and then blow it dry with a nitrogen gun;
[0065] Step 2, depositing c-TiO on the cleaned substrate 2 Electron transport layer;
[0066] 2a) Preparation of precursor solution:
[0067] First take 1.464mL of 75% mass fraction of diisopropyl diacetylacetonate titanate TiAc solution, add 18.536mL of 1-butanol to the solution for dilution, and sonicate the diluted solution for 15min to obtain 0.15mol / L c-TiO 2 Precursor solution;
[0068] Then take 2.928 mL of 75% mass fraction of diisopropyl diacetylacetonate titanate TiAc solution, add 18.536 mL of 1-butanol to the solution for dilution, and ultrasonicate the diluted solution for 15 minutes to obtain 0.3 mol / Lc-TiO 2 Precursor solu...
Embodiment 2
[0089] Fabricate solar cells with a 2TPATPE hole transport layer thickness of 200nm.
[0090] Step 1, place the 1.9mm quartz substrate containing fluorine-doped tin oxide FTO in deionized water, acetone, absolute ethanol and deionized water for 15 minutes for ultrasonic cleaning, and dry it with a nitrogen gun after cleaning;
[0091] Step 2, depositing c-TiO on the cleaned substrate 2 Electron transport layer;
[0092] 2.1) Preparation of precursor solution:
[0093] The concrete realization of this step is identical with step 2a) of embodiment 1;
[0094] 2.2) Spin coating c-TiO 2 Precursor solution:
[0095] First, spin-coat c-TiO with a concentration of 0.15mol / L on the cleaned substrate for the first time. 2 Precursor solution, spin-coating speed is 5000r / min, spin-coating time is 55s, and annealed on a hot stage at a temperature of 150°C for 5min;
[0096] Then, c-TiO with a concentration of 0.15mol / L was spin-coated 2 The second spin coating concentration of 0.3m...
PUM
Property | Measurement | Unit |
---|---|---|
Thickness | aaaaa | aaaaa |
Thickness | aaaaa | aaaaa |
Thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com