Chemico-mechanical polishing cleaning fluid for semiconductor silicon wafers

Abstract

The invention discloses chemico-mechanical polishing cleaning fluid for semiconductor silicon wafers. The chemico-mechanical polishing cleaning fluid is prepared from, by weight, 5-20 parts of organic acid, 0.2-1 part of surface active agent, 0.1-1 part of brightener, 1-10 parts of pH regulator, 0.01-0.1 part of oxidizing agent, 0.1-1 part of stabilizer, 0.1-1 part of inhibitor, 20-30 parts of deionized water and 2-8 parts of grinding agent. Organic acid is selected from one or more of citric acid and diammonium hydrogen citrate. The pH value of the cleaning fluid is 9.5-11.5. The surface active agent is a polyether surface active agent. The grinding agent is silicon dioxide. The surface tension of the cleaning fluid can be reduced, surface contaminants can be rapidly stripped, the surfaces of the silicon wafers can be effectively washed, and the surface roughness of the silicon wafers can be reduced. Contamination of metal impurities to silicon wafers is restrained, and precipitation of oxide can be reduced. The cleaning fluid is low in cost, free of pollution to the environment and capable of thoroughly removing contaminants. Expansion of movable metal ions is effectively eradicated, reliability of chips is improved, and yield of production is improved.

Description

technical field [0001] The invention relates to the field of semiconductor surface treatment, in particular to a semiconductor silicon chip chemical mechanical polishing cleaning solution. Background technique [0002] In the integrated circuit manufacturing process, the surface state and cleanliness of the chip are one of the most important factors affecting the quality and reliability of the device. Therefore, in the chip manufacturing process, chemical mechanical polishing must be performed on the silicon wafer. At present, the chemical mechanical polishing of silicon wafers is to place the silicon wafers on a polishing pad and polish the silicon wafers with a polishing liquid. Because the existing polishing liquid generally contains silicon dioxide, aluminum oxide, cerium oxide, metal ions and organic compounds, etc., after the silicon wafer is chemically mechanically polished, the above compounds, ions and particles generated during the polishing process will be adsorbe...

AI Technical Summary

Problems solved by technology

Because the existing polishing liquid generally contains silicon dioxide, aluminum oxide, cerium oxide, metal ions and organic compounds, etc., after the silicon wafer is chemically mechanically polished, the above compounds, ions and particles generated during the polishing process will be adsorbed. On the surface of the silicon wafer, the silicon wafer is polluted, so it is necessary to clean the silicon wafer after polishing to obtain a clean silicon wafer that meets the requirements

The existing cleaning solution oxidizes and corrodes the surface of silicon wafers, but it is prone to uneven corrosion, resulting in poor surface flatness of silicon wafers, and it is difficult to remove metal pollutants (iron, nickel, copper, Calcium, chromium, zinc, or their hydroxides or oxides), particles with a particle size below 0.1 μm, and metal ions, the cleaning effect is poor, the cost of the cleaning solution is high, and the environment is seriously polluted