A growth method of a light-emitting composite layer and an LED epitaxial structure containing the structure

Abstract

The first purpose of the invention lies in disclosing a growing method for a light-emitting composite layer, and the method comprises the steps: periodically growing 8-9 wafers, wherein each wafer sequentially comprises a first InxGa(1-x)N layer and a first GaN layer from the bottom to the top, wherein x=0.15-0.25. The second purpose of the invention lies in providing an LED epitaxial structure comprising the light-emitting composite layer. The light-emitting composite layer (a high-temperature quantum well structure) can achieve the absorption of lattice mismatch and dislocation at the bottom of an epitaxial layer and the relief of an internal stress, thereby reducing the lattice defects of a low-temperature quantum well, protecting the low-temperature quantum well to great extent, improving the crystal quality of a light-emitting region, and improving the anti-static capability of the LED epitaxial structure. Meanwhile, the structure employs a mode of low-temperature growing, can greatly reduce the separate-out of In, achieves the improvement of the confinement of carriers, increases the number of light-emitting quantum dots, facilitates the improvement of radiative recombination efficiency, and improves the light-emitting intensity.

Description

technical field [0001] The invention relates to the technical field of LEDs, in particular to a method for growing a light-emitting composite layer and an LED epitaxial structure containing the structure. Background technique [0002] At present, LED is a kind of solid-state lighting, which has the advantages of small size, low power consumption, long service life, high brightness, environmental protection, durability, etc., and is deeply loved by consumers. With the gradual expansion of the scale of domestic production of LEDs, the demand for LED light effects in the market is increasing day by day. [0003] Gallium nitride-based materials (including InGaN, GaN and AlGaN alloys) are direct bandgap semiconductors, and their bandgap is continuously adjustable from 0.7-6.2eV. They have excellent properties such as wide direct bandgap, strong chemical bonds, high temperature resistance, and corrosion resistance. , is an ideal material for the production of short-wavelength hig...

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Problems solved by technology

[0017] In the existing LED epitaxial structure, the lattice mismatch and dislocations at the bottom can easily enter the low-temperature quantum well region, resulting in a decrease in the crystal quality of the light-emitting region and an increase in defects. The recombination layer cannot effectively prevent defects and dislocations from the bottom from entering the low-temperature quantum well region, which will lead to a serious decline in the crystal quality of the light-emitting region, and the antistatic ability is naturally not high; the polarization effect is more obvious, and electrons and holes undergo radiative recombination The efficiency is passively decreased, so the low brightness is also a natural thing

[0018] At present, the market has higher and higher requirements for the brightness and antistatic ability of LED chips, but the brightness and antistatic ability of the existing LED epitaxial structure still cannot meet the actual needs. Therefore, a new LED epitaxial structure is urgently needed in the industry To solve the deficiencies of the existing technology

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