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Preparation method of doped tin oxide transparent conducting film

A technology of transparent conductive film and phosphorus-doped tin oxide, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of fluoride volatilization loss, lattice defects, increase in sheet resistance of conductive films, etc., and achieves good processing performance, The effect of low production cost

Inactive Publication Date: 2016-11-23
TIANJIN VOCATIONAL INST
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  • Description
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Problems solved by technology

[0005] The fluorine-doped tin oxide transparent conductive film has strict requirements on the amount of fluorine element. Only within a specific fluorine-doped concentration range can fluorine-doped tin oxide achieve high light transmittance and low resistance. When the fluorine-doped concentration is too low, the carrier concentration is low, and Supersaturated fluorine doping forms a large number of lattice defects, which also increases the sheet resistance of the conductive film
There is a big difference between the amount of fluorine doped in the production raw material formula and the actual amount of fluorine doped in the final conductive film. During production, there are problems of fluoride volatilization loss and diffusion into the glass substrate, and the existing technology cannot accurately control the fluorine-doped tin oxide film. The composition reaches the optimum fluorine content

Method used

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Examples

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Effect test

Embodiment 1

[0020] Coating of silica transition layer on the glass substrate: Rinse the ultra-clear glass substrate of 100 mm × 100 mm × 1 mm with clear water, clean and dry with absolute ethanol, and then coat the surface with a coating bar with a thickness of 100 nm. The nano-silica coating sol forms a uniform coating glass transition layer after drying in the air. The light transmittance in the visible light wavelength range of 400-760nm before and after coating is measured to be 91.5% and 93.5%, respectively.

[0021] Phosphorus-doped tin oxide nano sol preparation: 26.1g (0.1mol) of anhydrous tin tetrachloride is dissolved in 500ml deionized water, and the ammoniacal liquor of 2mol / L is added under stirring, until there is no precipitation anymore and solution pH is 8- 9. Filter the precipitate formed by hydrolysis, and wash with deionized water until there is no chloride ion. Suspend the precipitate in 200ml of deionized water, add 1.92g (0.02mol) of phosphoric acid as a doping phos...

Embodiment 2

[0027] Preparation of phosphorus-doped tin oxide gel film: coating phosphorus-doped tin oxide sol on the solar cell glass transition layer twice to make the thickness of the gel film 400-450nm, drying at 150°C to obtain phosphorus-doped tin oxide gel film , The measured gel particle size is 10-15nm, and the porosity of the gel film is 35%.

[0028] Fill the porous gel film with doped antimony fluoride: apply antimony trifluoride ethanol solution with a mass percent concentration of 5% on the phosphorus-doped tin oxide porous gel film twice to impregnate and fill the pores of the film. Then apply absolute ethanol to fill the antimony trifluoride film layer on the surface evenly and densely, control the molar ratio of doping raw materials as Sn:F:Sb =1:0.3:0.1, dry at 150°C, and measure the porosity of the film 25%.

[0029] High-temperature sintering of multi-element doped gel film: heat the multi-element doped glass substrate to 300°C in a high-temperature furnace, and reduce...

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PUM

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Abstract

The invention relates to a preparation method of a doped tin oxide transparent conducting film. Square resistance of a tin oxide transparent conducting film is reduced through a multi-element doping synergistic effect; a chemical composition of the doped tin oxide transparent conducting film formed by multi-element doping is as follows: Sn1-ySbyO2-xFxPz, wherein x is equal to 0.1 to 0.8, y is equal to 0.02 to 0.2 and z is equal to 0.02 to 0.2. A preparation process comprises six steps: coating a glass substrate with a silicon dioxide transition layer, preparing phosphorus-doped tin oxide nano sol, preparing a phosphorus-doped tin oxide gel film, filling a porous gel film with antimonic fluoride, sintering a multi-element-doped gel film at a high temperature and forming the dense transparent conducting film. The multi-element-doped tin oxide transparent conducting film provided by the invention has high light transmittance and low square resistance and can be used as a large-area film solar cell transparent electrode.

Description

technical field [0001] The invention relates to a method for preparing a transparent conductive film doped with tin oxide, in particular to a method for preparing a transparent conductive film of tin oxide doped with fluorine, antimony and phosphorus with high light transmittance and low sheet resistance, belonging to new energy materials and Energy saving and environmental protection field. technical background [0002] Transparent conductive oxide (TCO) is a photoelectric material that combines optical transparency and conductivity. It is currently widely used as transparent electrodes for thin-film solar cells, and is also used in liquid crystal displays, photocatalysis, and building energy conservation. Market demand huge. TCO glass is formed by uniformly coating a layer of TCO film on the glass surface by physical or chemical methods. Common TCO materials include indium oxide-based, tin oxide-based and zinc oxide-based three types. FTO conductive glass has a light tr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0224H01L31/18
CPCH01L31/022425H01L31/022466H01L31/1884Y02E10/50Y02P70/50
Inventor 李建生赵燕禹刘炳光王少杰韩秋坡刘晓敏滕得宝李雪王璐瑶
Owner TIANJIN VOCATIONAL INST
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