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A boron-doped zinc oxide lamellar ball/p-type pet-ito heterojunction and its preparation method and application

A technology of PET-ITO and zinc oxide, which is applied in the fields of chemical instruments and methods, chemical/physical processes, semiconductor/solid-state device manufacturing, etc., can solve problems such as electrical and photocatalytic properties of B-doped ZnO flake balls that are not mentioned , to achieve the effects of easy control, enhanced built-in electric field, and enhanced electrical performance

Inactive Publication Date: 2019-03-12
SHAANXI UNIV OF TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But none of them mentioned B-doped ZnO flake balls and their electrical and photocatalytic properties.

Method used

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  • A boron-doped zinc oxide lamellar ball/p-type pet-ito heterojunction and its preparation method and application
  • A boron-doped zinc oxide lamellar ball/p-type pet-ito heterojunction and its preparation method and application
  • A boron-doped zinc oxide lamellar ball/p-type pet-ito heterojunction and its preparation method and application

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preparation example Construction

[0028] The preparation method of the boron-doped ZnO flake ball / p-type PET-IEO heterojunction provided by the present invention comprises the following steps:

[0029] The first step of flexible substrate preparation: wash with absolute ethanol and deionized water, and air dry.

[0030] The second step is to plate the seed layer: use an ion sputtering device (the target is ZnO) to sputter a thin layer of ZnO seed layer on the surface of the flexible substrate PET-ITO, the process parameters are: sputtering time: 3 ~ 5min , Pressure: 8 ~ 10Pa, sputtering current 6 ~ 10mA.

[0031] Preparation of the third step precursor solution: preparation of zinc nitrate hexahydrate (Zn(NO 3 ) 2· 6H 2 0) and urotropine (C 6 h 12 N 4 ) mixed solution, then add H 3 BO 3 solution, and then using a magnetic stirrer to stir for 20 minutes to prepare a precursor solution. Zn(NO 3 ) 2 ·6H 2 O, C 6 h 12 N 4 and H 3 BO 3 The molar ratio of Zn(NO 3 ) 2 ·6H 2 The concentration of O ...

Embodiment 1

[0044] 1) Plating a ZnO seed layer on the surface of the PET-ITO substrate with an ion sputtering coater, the pressure is 10Pa, and the current is 6mA for 1min, and the current is 8mA for 4min;

[0045] 2) Prepare the precursor solution, Zn(NO 3 ) 2 ·6H 2 O, C 6 h 12 N 4 and H 3 BO 3 The molar ratio of Zn(NO 3 ) 2 ·6H 2 O and C 6 h 12 N 4 The molar concentration is 0.05mol / L, H 3 BO 3 The molar concentration is 0.03mol / L, and the magnetic stirrer stirs for 20min;

[0046] 3) Clamp the substrate with the seed layer on the surface with a sample holder and put it vertically into the precursor solution, seal it with a plastic wrap and put it in a drying oven, then raise the temperature to 90°C and keep it at a constant temperature for 5 hours. After cooling down to room temperature naturally, the samples were taken out, rinsed with deionized water, and dried at room temperature.

Embodiment 2

[0048] 1) Plating a ZnO seed layer on the surface of the PET-ITO substrate with an ion sputtering coater, the pressure is 8Pa, and the current is 7mA for 1min, and the current is 9mA for 3min;

[0049] 2) Prepare the precursor solution, Zn(NO 3 ) 2 ·6H 2 O, C 6 h 12 N 4 and H 3 BO 3 The molar ratio of Zn(NO 3 ) 2 ·6H 2 O, C 6 h 12 N 4 and H 3 BO 3 The molar concentration of each is 0.05mol / L, and the magnetic stirrer stirs for 20min;

[0050] 3) Clamp the substrate with the seed layer on the surface with a sample holder and put it vertically into the precursor solution, seal it with a plastic wrap and put it in a drying oven, then raise the temperature to 100°C and keep it at a constant temperature for 4 hours. After cooling down to room temperature naturally, the samples were taken out, rinsed with deionized water, and dried at room temperature.

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Abstract

The invention provides a boron-doped zinc oxide laminated sphere / p-type PET-ITO heterojunction and a preparation method and an application thereof. The preparation method comprises the steps of taking zinc nitrate hexahydrate, urotropine and boric acid as main reactants, and preparing a layer of quite thin ZnO seed crystal layer on the surface of a flexible substrate PET-ITO through ionic sputtering; then preparing boron-doped zinc oxide precursor solutions of different concentrations; and next, enabling a B-doped ZnO nano-structure to be grown on the vertically-put flexible substrate through a hydrothermal method to obtain the B-ZnO / PET-ITO heterojunction which can be used as a catalyst. The product obtained from the hydrothermal reaction has the special laminated spherical appearance, a typical rectifying characteristic, and a relatively high degradation effect on colored azo dye active yellow 15, so that the boron-doped zinc oxide laminated sphere / p-type PET-ITO heterojunction has wide research prospects in the fields of a heterojunction diode, environmental governance and the like, and is suitable for large-area production and application.

Description

technical field [0001] The invention belongs to the technical field of semiconductor optoelectronic devices and their preparation, and relates to a heterojunction diode with good rectification characteristics and a boron-doped zinc oxide flake ball / p-type PET-ITO heterojunction with improved photocatalytic performance Preparation. Background technique [0002] Zinc oxide (ZnO) is a direct bandgap semiconductor photocatalytic material of the Ⅱ-Ⅵ group, with a large band gap (3.37eV) at room temperature, high optical transmittance, wavelength in the near ultraviolet region, and exciton binding energy as high as 60meV. The thermal ionization energy is 26meV, which can realize highly efficient stimulated emission of excitons at room temperature or even high temperature, and produce ultraviolet radiation luminescence. It has broad application prospects in the field of short-wavelength optoelectronic devices (blue-violet light detectors, photoelectric sensors, etc.). Intrinsic Zn...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/22H01L29/24H01L29/861H01L21/34H01L21/02B01J31/26B82Y30/00
CPCB01J31/26B01J35/004B82Y30/00H01L21/02414H01L21/02554H01L21/02576H01L21/0259H01L21/02634H01L29/22H01L29/24H01L29/66969H01L29/861
Inventor 于琦王维艾桃桃袁新强姜立运李文虎蒋鹏
Owner SHAANXI UNIV OF TECH
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