Integrated halogen perovskite nuclear battery and preparation method thereof
A perovskite and nuclear battery technology, applied in the field of nuclear power generation, can solve the problems of low energy utilization rate, achieve the effect of improving energy utilization rate, less defects, and reducing pressure
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preparation example Construction
[0046] The corresponding preparation method includes the following key points:
[0047] (1) Preparation of integrated isotope-halogen perovskite layer:
[0048] The raw material of perovskite can be dissolved in polar solvent according to stoichiometric ratio, as DMF, DMSO, HBr aqueous solution etc., need according to different perovskite (namely, ABX 3 or A 2 CDX 6 ) specific selection. radioactive compounds such as 137 CsCl, prepare a solution of a certain concentration with the same polar solvent as the preparation of the perovskite solution (radioactive substances can be dispersed or dissolved in the polar solvent, and the concentration of the solution can be determined according to the preparation method and thickness of the perovskite layer. Changes and adjustments, as long as the activity range of the radioactive elements in the device is guaranteed to be 1*10 6 ~1*10 8 Bq is enough), take a certain amount of the above solution and mix it uniformly with the perovs...
Embodiment approach
[0050] For device structure A, the electron transport layer can be prepared by spin coating on the substrate containing TCO (transparent conductive film), and then the integrated perovskite can be prepared by blade coating or spin coating using the above prepared precursor solution. Mineral layer, its thickness requirement is 300nm~1μm. Then the hole transport layer is prepared by spin coating on the perovskite layer, and finally the ohmic contact electrode is prepared by evaporation / magnetron sputtering.
[0051] For the device structure B, the precursor solution prepared above can be used first, and the isotope-doped perovskite single crystal can be prepared by evaporating anti-solvent method, variable temperature crystallization method or evaporating solvent method. Next, the hole transport layer was spin-coated on one side of the single crystal, and then the electron transport layer was prepared on the other side by film transfer method, and finally the ohmic contact elect...
specific Embodiment
[0053] Device Structure A Embodiment 1
[0054] This embodiment comprises the following steps:
[0055] 1. Substrate preparation steps: Clean the FTO glass in detergent, acetone, isopropanol, ethanol, and deionized water in sequence, and use an ultrasonic machine to clean it, each step is 30 minutes, and the heating temperature is 20-50°C.
[0056] 2. Fabrication of the electron transport layer: Firstly, a 15nm-thick dense TiOx is prepared on the FTO substrate by atomic layer deposition. 4 and H2O, each time for 30s, the excess Ti source needs to be removed by vacuum after TiCl4 is introduced, and the above process is repeated 330 times, and finally the surface impurities are removed by ultraviolet ozone.
[0057] Then use Dyesol's TiO model 18NR-T 2 Slurry, prepare TiO with a mass ratio of 2:7 2 ethanol solution, ultrasonically stirred overnight to obtain uniformly dispersed TiO 2 Quantum dot paste. Take the above 1mL slurry and drop it into the dense layer, spin coat it...
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