A kind of preparation method of large-scale gallium nitride semiconductor chip for LED

Abstract

The invention proposes a fabrication method of a large-size GaN semiconductor sheet for an LED. The fabrication method comprises the steps of fabricating a large-area GaN substrate by taking silicon dioxide aerogel and aluminum oxide as raw materials; mixing the silicon dioxide aerogel and the aluminum oxide to obtain aluminum oxide-silicon dioxide aerogel composite sol, performing coating process, coating the aluminum oxide-silicon dioxide aerogel composite sol on a surface of ordinary glass, forming a composite substrate material by a sintering process, and performing deposition to grow the large-size GaN semiconductor. Due to the scalability, the high-temperature resistance and the strippability of the silicon dioxide aerogel, the obtained GaN is large in size and complete in lattices and has no defect; and moreover, the substrate fabricated according to the method can be repeatedly used, is low in cost and simple in process, and is suitable for industrial production on a large scale.

Description

technical field [0001] The invention relates to the field of preparation of luminescent materials, in particular to a method for preparing large-sized gallium nitride semiconductor chips for LEDs. Background technique [0002] A light-emitting diode is a type of semiconductor diode that can convert electrical energy into light energy; it is often abbreviated as LED. Like ordinary diodes, light-emitting diodes are composed of a PN junction and also have unidirectional conductivity. When a forward voltage is applied to the light-emitting diode, the holes injected from the P region to the N region and the electrons injected from the N region to the P region are respectively connected to the electrons in the N region and the vacancies in the P region within a few microns near the PN junction. Hole recombination, resulting in spontaneous emission of fluorescence. The energy states of electrons and holes are different in different semiconductor materials. The amount of energy r...

AI Technical Summary

Problems solved by technology

However, this process has a small size of hexagonal boron nitride, which is not conducive to the use of large-scale substrates

[0008] In summary, the existing GaN substrates mostly use sapphire, silicon carbide and silicon, but the degree of lattice mismatch leads to the formation of defects that limit light emission in the GaN film.

The use of nanomaterials to improve GaN substrate technology has appeared, but this technology still has defects with high defect density and small size.

Images