Ion stabilizer doped perovskite film as well as preparation method and application thereof

A technology of doping ions and stabilizers, which is applied in semiconductor/solid-state device manufacturing, photovoltaic power generation, electrical components, etc. It can solve problems such as battery hysteresis, device service life reduction, and device performance deterioration, so as to improve stability and prolong Device life, the effect of promoting industrial production

Active Publication Date: 2018-06-29
HANGZHOU MICROQUANTA SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

An important aspect that affects the service life of perovskite is that perovskite solar cells are prone to ion migration under light, especially the migration of halogen ions, which leads to the hysteresis effect of the battery and the deterioration of device performance.
The vacancies left by the ion migration will damage the semiconductor structure of the perovskite and cause an irreversible reduction in the service life of the device.

Method used

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  • Ion stabilizer doped perovskite film as well as preparation method and application thereof
  • Ion stabilizer doped perovskite film as well as preparation method and application thereof
  • Ion stabilizer doped perovskite film as well as preparation method and application thereof

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preparation example Construction

[0047] The present invention also discloses a method for preparing a perovskite film doped with an ion stabilizer as described above, comprising the following steps:

[0048] Step S11, preparing a perovskite solution;

[0049] Step S12, adding an ion stabilizer to the perovskite solution, heating and stirring at 70° C. for 2 hours to obtain a perovskite stabilizer mixed solution;

[0050] Step S13, coating the perovskite stabilizer mixture on the substrate deposited with the transport layer to form a layer containing perovskite A thin film layer of the stabilizer mixed solution, and the thin film layer is annealed to obtain a perovskite thin film layer doped with an ion stabilizer;

[0051] In step S11, the perovskite solution is mixed with at least one divalent metal halide precursor BX 2 A solution containing at least one reactant AX and an organic solvent, B is a divalent metal cation: lead, tin, tungsten, copper, zinc, gallium, germanium, arsenic, selenium, rhodium, pall...

example 1

[0074] Example 1, a preparation method of a perovskite solar cell - solution mixing method, please refer to the attached figure 2 The schematic diagram of the internal structure of the perovskite solar cell shown includes the following steps:

[0075] (1) Clean a 10×10cm FTO glass plate with detergent, deionized water, acetone, and isopropanol for 30 minutes, and then use N 2 After drying, it was treated with UV O-zone for 10 minutes;

[0076] (2) Preparation of CuSCN film as a hole transport layer;

[0077] (3) Preparation of perovskite solution: 461 mg of PbI 2 (1mmol), 159mg of MAI (1mmol) were dissolved in 1mL of DMF solution, 70.9uL of anhydrous DMSO was added, and 36.9mg of tetrabutylammonium iodide (0.1mmol) was added as an ion stabilizer, heated and stirred at 70°C for 2h , ready to use after mixing completely;

[0078] (4) Use the doped perovskite solution to prepare the perovskite film doped with stabilizer by slit coating, and anneal at 60~150°C for 10~120min, ...

example 2

[0081] Example 2, a preparation method of perovskite solar cells - vapor phase assisted deposition method, please refer to the attached figure 2 The schematic diagram of the internal structure of the perovskite solar cell shown includes the following steps:

[0082] (1) Clean a 5×5cm ITO glass plate with detergent, deionized water, acetone, and isopropanol for 30 minutes, and then use N 2 After drying, it was treated with UV O-zone for 10 minutes;

[0083] (2) Preparation of NiO x The thin film acts as a hole transport layer;

[0084] (3) Preparation of precursor stabilizer mixture: 461mg of PbI 2 (1mmol), dissolved in 1mL of DMF solution, add 70.9uL of anhydrous DMSO, and add 13.4μL of phenethanethiol (0.1mmol) as an ion stabilizer, heat and stir at 70°C for 2h, mix completely and set aside;

[0085] (4) Prepare stabilizer-doped PbI by slot coating using the prepared stabilizer mixture 2 film;

[0086] (5) The prepared PbI doped with stabilizer 2 The film substrate is...

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Abstract

The invention relates to an ion stabilizer doped perovskite film. An ion stabilizer is doped in the perovskite film. The chemical structural formula of the ion stabilizer is R1-R-R2, wherein R is alkyl; R1 is any one of alkyl, aryl, hydroxyl, carboxyl, alkoxyl, amino, substituted amino, ester group and acylamino; and R2 is at least one of halogen, an oxygen-containing group, a sulfur-containing group, a nitrogen-containing group, a phosphorus-containing group, an arsenic-containing group and a carbon-containing group. The invention also discloses a preparation method and an application of theion stabilizer doped perovskite film. By doping the ion stabilizer, the battery performance of a doped perovskite solar battery is improved, and the stability of the solar battery is improved.

Description

technical field [0001] The invention belongs to the technical field of perovskite solar cells, and in particular relates to a perovskite thin film doped with an ion stabilizer and a preparation method and application thereof. Background technique [0002] In recent years, a perovskite solar cell that uses organometallic halides as the light absorbing layer has received much attention. Perovskite as ABX 3 type of cubo-octahedral structure, such as figure 1 shown. The thin-film solar cells made of this material are simple in process, low in production cost, stable and high in conversion rate. Since 2009, the photoelectric conversion efficiency has increased from 3.8% to 22.7%, which is higher than that of commercial crystalline silicon solar cells and has a relatively high performance. Great cost advantage. [0003] In order to further improve the efficiency of perovskite batteries, some studies have proposed new battery structures, or modified material interfaces, and e...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/46H01L51/48
CPCH10K71/12H10K30/10H10K30/50Y02E10/549
Inventor 不公告发明人
Owner HANGZHOU MICROQUANTA SEMICON CO LTD
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