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Organic-inorganic composite self-driven photodetector and preparation method thereof

A photodetector, inorganic composite technology, applied in the fields of photovoltaic power generation, electric solid state devices, semiconductor/solid state device manufacturing, etc. The effect of sufficient raw materials

Active Publication Date: 2021-03-02
SUZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

After all, the narrower the response wavelength range of photodetectors, the harsher the use conditions will be, and the application value will be limited to a greater extent

Method used

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  • Organic-inorganic composite self-driven photodetector and preparation method thereof
  • Organic-inorganic composite self-driven photodetector and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044] (1) The silicon wafer substrate was ultrasonically cleaned in acetone, alcohol and deionized water for 20 minutes respectively. After vacuum drying, the silicon flakes were placed in a vessel filled with a mixed solution of 4.6M hydrofluoric acid and 0.01M silver nitrate for etching, and silver particles were deposited on the silicon flakes at the same time. After rinsing with deionized water, stand still in a mixed solution containing 4.6M hydrofluoric acid and 0.4M hydrogen peroxide, and heat at 50°C for 15 minutes. Rinse it with deionized water, soak it in concentrated nitric acid for 15 minutes, then rinse it with deionized water, and dry it in a vacuum dryer for use. Using the above steps, a silicon nanowire array is formed on the silicon wafer, and the silicon nanowires formed by etching are perpendicular to the surface of the silicon wafer.

[0045] (2) Put the etched silicon wafer into the atomic layer deposition chamber, use titanium isopropoxide or titanium t...

Embodiment 2

[0050] A silicon wafer with a titanium oxide film was prepared according to the method in steps (1) and (2) of Example 1, except for step (3).

[0051] (3) Dissolve 10 mg of P3HT powder in 1 mL of chlorobenzene and stir overnight, and then use a homogenizer to spin coat the surface of the titanium oxide film step by step: first spin coating at 1000r / min for 20 seconds, then spin coating at 2000r / min for 20 seconds , the desired organic-inorganic composite self-driven photodetector was obtained after the chlorobenzene volatilized.

[0052] The photodetector prepared by this method can realize the photoresponse in the range of 300-1100nm, and the responsivity can reach 9.7A / W under 0V bias, and the detection rate can reach 7.6×10 14 Jones.

[0053] figure 2 It is the responsivity curve of the photodetector measured by the present invention, and the curve in the figure is the responsivity curve of the photodetector with a titanium oxide thickness of 5nm and a P3HT concentratio...

Embodiment 3

[0055] A silicon wafer with a titanium oxide film was prepared according to the method in steps (1) and (2) of Example 1, except for step (3).

[0056] (3) Dissolve 5 mg of P3HT powder in 1 mL of chlorobenzene and stir overnight, and then use a homogenizer to spin coat the surface of the titanium oxide film step by step: first spin coating at 1000r / min for 20 seconds, then spin coating at 2000r / min for 20 seconds , the desired organic-inorganic composite self-driven photodetector was obtained after the chlorobenzene volatilized.

[0057] The photodetector prepared by this method can achieve high response to 300-1100nm monochromatic light, and the responsivity under 0V bias can reach 5.5A / W, and the detection rate can reach 1.4×10 14 Jones.

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Abstract

The invention relates to an organic-inorganic composite self-driven photodetector, which comprises a silicon wafer, a titanium oxide film located above the silicon wafer, and an organic film located above the titanium oxide film. The material of the organic film is P3HT. The silicon wafer includes a bottom surface and a Several silicon nanowires on the bottom surface. The present invention also provides its preparation method, comprising the following steps: etching the silicon wafer in an aqueous solution containing hydrofluoric acid and a silver salt catalyst, and then using an oxidizing agent to remove the remaining silver salt catalyst to form a number of silicon nanometers on the silicon wafer. line; using the atomic deposition method, the treated silicon wafer is reacted in a titanium source and an oxygen source at 80‑100 ° C to form a titanium dioxide layer on the silicon wafer; the silicon wafer with the titanium dioxide layer is placed in an inert gas for 400 Calcination at ‑500°C for 1‑2h to form a titanium oxide film on the silicon wafer; modify the organic solution of poly(3‑hexylthiophene‑2,5‑diyl) on the surface of the titanium oxide film, and obtain an organic-inorganic Composite self-driven photodetectors.

Description

technical field [0001] The invention relates to the technical field of photodetector preparation, in particular to an organic-inorganic composite self-driven photodetector and a preparation method thereof. Background technique [0002] As an important class of photoelectric sensing devices, photodetectors are widely used in national defense, industry, medicine, space science and daily life, such as national defense military early warning, communication, environmental monitoring, etc. And in today's society where artificial intelligence is developing rapidly and tending to be universal, detectors are indispensable. As a detector with a wide range of applications, photodetectors must have a very large market, demand and prospects. The principle of photodetection is mainly based on the photoconductive process, including the absorption of optical radiation, the generation and transport of photogenerated carriers. The structural parameters and surface states of materials, as wel...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/42H01L27/30
CPCH10K39/30H10K30/10Y02E10/549
Inventor 田维李亮陈亮
Owner SUZHOU UNIV