Silicon nano-wire-polypyrrole composite material preparation method

A technology of silicon nanowires and composite materials, applied in nanotechnology, nanotechnology, analytical materials, etc., can solve the problems of inability to achieve modern production, low sensitivity of gas sensor components, poor response recovery performance, etc., and achieve efficient heterogeneous synergistic coupling performance, providing sensitivity, cost-effective results

Active Publication Date: 2018-08-28
TIANJIN UNIV
View PDF12 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the preparation process of traditional polypyrrole nanocomposites is complicated, and the prepared gas sensor has low sensitivity and poor response recovery performance, which cannot meet the needs of modern production. Therefore, it is time to prepare a simple and cheap high-performance gas sensor system.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Silicon nano-wire-polypyrrole composite material preparation method
  • Silicon nano-wire-polypyrrole composite material preparation method
  • Silicon nano-wire-polypyrrole composite material preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] (1) Cleaning of monocrystalline silicon wafers

[0036] Silicon wafers were ultrasonically cleaned in hydrogen peroxide (10wt% hydrogen peroxide aqueous solution) and concentrated sulfuric acid (98wt% by mass) at a volume ratio of 4:1 for 10 minutes, and then placed in acetone solvent, absolute ethanol, and deionized water successively. Ultrasonic cleaning was performed for 5-10 minutes to remove surface oil and organic impurities, and then dried thoroughly in an infrared oven.

[0037] (2) Configure chemical etching solution

[0038] Dissolving silver nitrate in hydrofluoric acid aqueous solution, the concentration of hydrofluoric acid in the obtained solution is 3M, and the concentration of silver nitrate is 0.02M.

[0039] (3) Metal-assisted chemical etching

[0040] Putting the silicon wafer into the solution prepared in step (2) for etching, the etching time is 120 min. After the etching is completed, the surface still has silver impurities remaining after chemi...

Embodiment 2

[0050] (1) Cleaning of monocrystalline silicon wafers

[0051] Silicon wafers were ultrasonically cleaned in hydrogen peroxide (10wt% hydrogen peroxide aqueous solution) and concentrated sulfuric acid (98wt% by mass) at a volume ratio of 4:1 for 10 minutes, and then placed in acetone solvent, absolute ethanol, and deionized water successively. Ultrasonic cleaning was performed for 5-10 minutes to remove surface oil and organic impurities, and then dried thoroughly in an infrared oven.

[0052] (2) Configure chemical etching solution

[0053] Dissolving silver nitrate in hydrofluoric acid aqueous solution, the concentration of hydrofluoric acid in the obtained solution is 4M, and the concentration of silver nitrate is 0.03M.

[0054] (3) Metal-assisted chemical etching

[0055] Putting the silicon wafer into the solution prepared in step (2) for etching, the etching time is 150 min. After the etching is completed, the surface still has silver impurities remaining after chemi...

Embodiment 3

[0065] (1) Cleaning of monocrystalline silicon wafers

[0066] Silicon wafers were ultrasonically cleaned in hydrogen peroxide (10wt% hydrogen peroxide aqueous solution) and concentrated sulfuric acid (98wt% by mass) at a volume ratio of 4:1 for 10 minutes, and then placed in acetone solvent, absolute ethanol, and deionized water successively. Ultrasonic cleaning was performed for 5-10 minutes to remove surface oil and organic impurities, and then dried thoroughly in an infrared oven.

[0067] (2) Configure chemical etching solution

[0068] Dissolving silver nitrate in hydrofluoric acid aqueous solution, the concentration of hydrofluoric acid in the obtained solution is 5M, and the concentration of silver nitrate is 0.01M.

[0069] (3) Metal-assisted chemical etching

[0070] Putting the silicon wafer into the solution prepared in step (2) for etching, the etching time is 60 min. After the etching is completed, the surface still has silver impurities remaining after chemic...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a silicon nano-wire-polypyrrole composite material preparation method, which comprises: carrying out metal assisted chemical etching on a single crystal silicon wafer by usingsilver nitrate and hydrofluoric acid to form silicon nano-wires positioned on the single crystal silicon wafer and perpendicular to the surface, coating the surface of the single crystal silicon waferwith the mixed solution of dodecyl benzenesulfonic acid and ammonium persulfate in a spin-coated manner, placing into a closed polymerization device, suspending the wafer above a pyrrole monomer solution, pumping to form a negative pressure, and polymerizing to obtain the silicon nano-wire-polypyrrole composite material. According to the present invention, the preparation method overcomes the disadvantages of the traditional liquid phase chemical polymerization method and the electrochemical preparation method, and has characteristics of simpleness, low cost and low power consumption; the synthesized polypyrrole film is dense and uniform; and the polypyrrole surface modified one-dimensional silicon-based gas sensitive material constructed by the method has high room temperature sensitivity and fast response recovery performance to specific gases.

Description

technical field [0001] The present invention belongs to the technical field of preparation of composite materials, more specifically, relates to the field of preparation of polypyrrole composite materials, especially to a preparation method of silicon nanowire / polypyrrole composite materials (SiNWs@ppy), and provides a A gas-phase pyrrole monomer is polymerized on a silicon nanowire at room temperature. At the same time, the silicon nanowire / polypyrrole composite structure is also of great research value in terms of low power consumption and ultra-fast response speed of sensitive devices. Background technique [0002] Single crystal silicon nanowires have a very high specific surface area and very good surface activity, and are very suitable for making various sensor devices, so they have received extensive attention in recent years. Traditional silicon nanowires (SiNWs) preparation methods include: hydrothermal method, solution method, chemical vapor deposition, metal-assi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/12B82Y30/00B82Y40/00C23C14/16C23C14/34C30B33/10
CPCB82Y30/00B82Y40/00C23C14/165C23C14/34C30B33/10G01N27/127
Inventor 秦玉香崔震刘雕王泽峰
Owner TIANJIN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap