Supported high-porosity porous metal oxide material, and preparation method and application thereof

A porous metal, high porosity technology, applied in the directions of tin oxide, zinc oxide/zinc hydroxide, cobalt oxide/cobalt hydroxide, etc., which can solve the problem of expensive raw material yield of chemical vapor deposition method, unsuitable for large-scale production, and reaction conditions Harsh and other problems, to achieve the effect of increasing the amount of electron transport, conducive to diffusion transport, and easy availability of raw materials

Pending Publication Date: 2019-08-20
上海复感科技有限公司
View PDF1 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among them, the hydrothermal or solvothermal method requires high temperature and high pressure reaction, the reaction conditions are harsh, the sol-gel method takes a long time to synthesize, up to several weeks, and the chemical vapor deposition method has expensive raw materials and low output. These three methods are not suitable for industrialization. mass production

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] Dissolve 2.0g methyl orthosilicate in a mixed solution of 5.0mL ethanol and 5.0mL methanol, stir for 6h to obtain solution A; dissolve 4.2g ZnCl 2 Dissolve in 15.0mL of water, add 0.08g of chloroauric acid, stir until completely dissolved to obtain solution B; mix solution A and solution B, stir for 1 hour, heat to 100°C to completely volatilize the solution to obtain a solid; place the obtained solid in Roast in a muffle furnace at a temperature of 450°C and a time of 1.5 hours. Disperse the obtained solid in a solution with pH=10, react at 50°C for 4h to etch SiO 2 ; The etched sample was centrifuged, washed 3 times with distilled water, and dried at 100°C to obtain Au-loaded porous ZnO material with a specific surface area of ​​85m 2 / g, the material has 2-500nm hierarchical micropores, mesopores and macropores.

Embodiment 2

[0028] Dissolve 1.15g (3-aminopropyl)triethoxysilanetrimethoxysilane in 8.0mL tetrahydrofuran and stir for 1h to obtain solution A; dissolve 6.6g Na 2 [Sn(OH) 6] was dissolved in 20mL of ethanol, added 0.1g of platinum particles, stirred until completely dissolved to obtain solution B; mixed solution A and solution B, stirred for 3.5 hours, and spread the solution on multiple petri dishes to make the solution completely volatilize, A solid was obtained; the obtained solid was roasted in a tube furnace under a nitrogen atmosphere at a roasting temperature of 500° C. for a roasting time of 3 h. Disperse the obtained solid in a solution with pH=10, react at 80°C for 2h to etch SiO 2 ; The etched sample was centrifuged, washed 3 times with distilled water, and dried at 100°C to obtain Pt-loaded porous SnO 2 Material, specific surface area 76m 2 / g, the material has 10-200nm hierarchical micropores, mesopores and macropores.

Embodiment 3

[0030] Dissolve 2.25g of sodium silicate in 9.0mL of water and stir for 2 hours to obtain solution A; dissolve 3.8g of cobalt acetylacetonate in 12.0mL of methanol and stir until completely dissolved to obtain solution B; mix solution A and solution B and stir for 5 hour, the above solution was applied to the quartz substrate by spin coating method, and the solution was completely volatilized to obtain a solid; the obtained solid was roasted in a muffle furnace at a roasting temperature of 300 °C for a roasting time of 2.5 hours; and then the obtained solid Disperse in a solution with pH = 13, react at room temperature for 12 hours to etch SiO 2 ; The etched sample was separated after natural sedimentation, washed 3 times with ethanol, and dried at 100°C to obtain porous Co 3 o 4 Material, specific surface area 185m 2 / g, the material has multi-level micropores and mesopores of 0.5-60nm.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
specific surface areaaaaaaaaaaa
sizeaaaaaaaaaa
surface areaaaaaaaaaaa
Login to view more

Abstract

The invention discloses a supported high-porosity porous metal oxide material, and a preparation method and application thereof, and belongs to the technical fields of advanced functional materials and nano materials. The method comprises the following steps: firstly, adding a pre-hydrolyzed silicon oxide oligomer solution into a mixed solution of a metal salt and a load, uniformly carrying out stirring, and then removing the solvent by evaporation to obtain a metal hydroxyl oxide solid uniformly doped with a silicon oxide oligomer; and further calcining the solid to crystallize the metal oxide, and then removing silicon oxide by etching through an alkaline solution to form pores, so that the high-porosity supported porous metal oxide material is obtained. The material has a crystallized metal oxide skeleton, high specific surface area and porosity and a three-dimensional communicated multi-stage pore channel, so that diffusion and mass transfer of gas and liquid in the material are facilitated, and then the material has excellent performance in the fields of gas sensing, heterogeneous catalysis and the like. The method disclosed by the invention is simple to operate, has easily available raw materials, and is suitable for large-scale industrial production.

Description

technical field [0001] The invention belongs to the field of advanced functional materials and nanotechnology, and specifically relates to a loaded porous metal oxide material with high porosity and its preparation method and application. Background technique [0002] Semiconductor metal oxides are an important class of functional materials, which have been widely used in gas sensing, catalysis, electrochemistry and other fields. Semiconductor gas sensors can detect low-concentration harmful gases in the environment, and have been widely used in industrial production process monitoring, air pollution detection, food safety detection, public medical detection and other occasions. The core of the semiconductor gas sensor lies in the metal oxide sensitive material, and the performance of the sensitive material determines the quality of the gas sensor. At present, commercially available semiconductor sensors usually use traditional powdered metal oxides as sensitive materials. ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C01G9/02C01G19/02C01G51/04B82Y40/00B82Y30/00
CPCB82Y30/00B82Y40/00C01G9/02C01G19/02C01G51/04C01P2006/12C01P2006/14
Inventor 不公告发明人
Owner 上海复感科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products