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Method for in-situ generation of BiVO4/Bi2O3 heterojunction and photocatalytic application of the BiVO4/Bi2O3 heterojunction

An in-situ generation and photocatalytic technology, applied in the field of photocatalytic materials, can solve the problems of small heterojunction interface area, large heterojunction interface area, and good photocatalytic performance, and achieve low cost, large interface area, photocatalytic The effect of high catalytic performance

Active Publication Date: 2020-06-12
QINGDAO UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The present invention aims at the BiVO prepared by the existing chemical deposition method and physical mixing method 4 / Bi 2 o 3 The problems of small heterojunction interface area and insufficient contact provide a novel in-situ generation of BiVO by light irradiation. 4 / Bi 2 o 3 The preparation technology of heterojunction, the BiVO prepared by this technology 4 / Bi 2 o 3 Large heterojunction interface area, good photocatalytic performance

Method used

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  • Method for in-situ generation of BiVO4/Bi2O3 heterojunction and photocatalytic application of the BiVO4/Bi2O3 heterojunction
  • Method for in-situ generation of BiVO4/Bi2O3 heterojunction and photocatalytic application of the BiVO4/Bi2O3 heterojunction

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0015] Step 1: Weigh 2.428 g of bismuth nitrate pentahydrate, dissolve it in 10 ml of 4.0 mol / L nitric acid aqueous solution, then add 0.255 g of sodium dodecyl benzene sulfonate, stir well; then weigh 0.589 g of vanadium Ammonium acid, dissolve it in 10 ml of 2.0 mol / L sodium hydroxide aqueous solution, mix the above two solutions and stir uniformly. Then, a 2.0 mol / liter sodium hydroxide aqueous solution was added dropwise to the mixed solution until the pH of the mixed solution was 7.0. Pour the mixed solution into a 100 ml autoclave, keep it at 200 degrees Celsius for 90 minutes, cool to room temperature, centrifuge to separate the yellow precipitate, and wash it with absolute ethanol and deionized water. Then dry in a vacuum drying oven at 60 degrees Celsius for 12 hours to obtain BiVO 4 Nanosheets.

[0016] Step 2: Weigh 25 mg BiVO 4 , Add 1 ml of absolute ethanol, ultrasonically disperse uniformly, then add 30 microliters of 5% naphthol solution, ultrasonically disperse t...

Embodiment 2

[0018] The steps are the same as step one in Example 1.

[0019] Step 2: Weigh 25 mg BiVO 4 , Add 1 ml of absolute ethanol, ultrasonically disperse uniformly, then add 30 microliters of 5% naphthol solution, ultrasonically disperse to form a uniform slurry, drip all the slurry on the surface of 20 by 20 square millimeter glassy carbon, after drying Place it in 1 mol / L potassium hydroxide aqueous solution, and irradiate the glassy carbon coated with catalyst with xenon lamp ultraviolet light for 40 minutes to obtain BiVO 4 / Bi 2 O 3 sample.

Embodiment 3

[0021] The steps are the same as step one in Example 1.

[0022] Step 2: Weigh 25 mg BiVO 4 , Add 1 ml of absolute ethanol, ultrasonically disperse uniformly, then add 30 microliters of 5% naphthol solution, ultrasonically disperse to form a uniform slurry, all the slurry is dripped on the surface of 20 times 20 square millimeter glassy carbon, and dried Then it was placed in 1 mol / L potassium hydroxide aqueous solution, and the glassy carbon coated with the catalyst was irradiated with xenon lamp ultraviolet light for 20 minutes to obtain BiVO 4 / Bi 2 O 3 sample.

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Abstract

The invention relates to a method for preparing a BiVO4 / Bi2O3 photocatalyst through ultraviolet irradiation and application of the BiVO4 / Bi2O3 photocatalyst in photocatalysis. The preparation method specifically comprises the following steps: coating a conductive substrate with BiVO4 powder, placing the conductive substrate in an alkaline electrolyte, and irradiating BiVO4 coated on the conductivesubstrate with ultraviolet light for a certain period of time to obtain the BiVO4 / Bi2O3 photocatalyst. The preparation method has the advantages that Bi2O3 can be generated on the surface of BiVO4 insitu under ultraviolet irradiation to obtain the BiVO4 / Bi2O3 heterojunction, and the BiVO4 / Bi2O3 heterojunction has the characteristics of large interface area, tight interface contact and the like;the BiVO4 / Bi2O3 heterojunction prepared by the method provided by the invention has good photocatalytic oxidation performance on organic pollutants as a photocatalyst. In addition, the light irradiation technology related to the invention is simple in preparation process, green and environment-friendly.

Description

Technical field [0001] The invention belongs to the field of photocatalytic materials, and specifically refers to a type of BiVO 4 / Bi 2 O 3 Preparation method of heterojunction and its application in photocatalytic degradation reaction of organic matter. Background technique [0002] In the field of photocatalysis, BiVO 4 Because of its narrow band gap (2.4~2.8eV) and deep valence band position (~2.78eV), it is often used as a photocatalyst. However, due to the low photo-generated charge separation efficiency, most photo-generated electron-holes recombine before reaching the catalyst surface, and only a few photo-generated charges can migrate to the catalyst surface to participate in the catalytic reaction. Therefore, the photocatalytic performance of a single semiconductor is still low, and a heterojunction is usually constructed to improve the photocatalytic charge separation efficiency. For heterojunction photocatalysts, band matching and good contact interface are critical ...

Claims

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Application Information

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IPC IPC(8): B01J23/22B01J37/34C02F1/30C02F101/30
CPCB01J23/22B01J23/002B01J37/345C02F1/30C02F2305/10C02F2101/308B01J35/39
Inventor 姜鲁华王功刘静
Owner QINGDAO UNIV OF SCI & TECH