Novel perovskite semiconductor type X-ray detector and preparation method thereof

Abstract

The invention provides a perovskite semiconductor type X-ray detector, which comprises a top electrode, a perovskite light absorption layer and a signal reading thin film transistor array, and furthercomprises a first interface layer and a second interface layer, wherein the first interface layer is located between the top electrode and the perovskite light absorption layer, and the second interface layer is located between the perovskite light absorption layer and the signal reading thin film transistor array. The invention also provides a preparation method of the perovskite semiconductor type X-ray detector. According to the perovskite semiconductor type X-ray detector, the first interface layer and the second interface layer are arranged, so that effective contact and adhesion improvement between the perovskite light absorption layer and the top electrode and between the perovskite light absorption layer and the signal reading thin film transistor array are facilitated, the signal-to-noise ratio of the detector is improved, the response speed of the detector is improved, and long-term stability of the performance of the perovskite detector is guaranteed.

Description

technical field [0001] The invention belongs to the technical field of X-ray detectors, and in particular relates to a novel perovskite semiconductor X-ray detector and a preparation method thereof. Background technique [0002] An X-ray detector is a device that receives X-ray radiation and converts the X-ray energy into electrical signals that can be recorded. X-ray detectors have the characteristics of high spatial resolution and no detection damage, and can accurately detect the internal microstructure of samples such as organisms, minerals, and metals, and are widely used in medical treatment, security inspection, scientific research, nuclear industry, and military industry. and other fields. According to the electrical signal conversion method of X-ray detectors, it is generally divided into semiconductor-type direct detectors (directly converting X-rays into electrical signals) and scintillator-type indirect detectors (converting X-rays into optical signals and then ...

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Problems solved by technology

However, many perovskite materials have low resistivity, which leads to a huge dark current and annihilation of the signal. Moreover, the perovskite material itself will produce a strong ion migration phenomenon under the electric field, so that the dark current cannot be kept stable for a long time. These factors lead to Low or unstable signal-to-noise ratio

Thirdly, the upper and lower surfaces of perovskite materials often have a large number of surface defects, which will cause serious ion migration under the condition of an external electric field, resulting in the inability of the dark current to remain stable for a long time and affecting the response speed of the detector.

Finally, the perovskite material is in direct contact with the signal readout thin film transistor array and the top electrode of the detector, and it is easy to chemically react with the metal material of the signal readout thin film transistor array and the top electrode, resulting in a decrease in the performance of the perovskite light-absorbing layer and affecting detection. The stability of the performance of the detector, and the perovskite material itself is also easily affected by external conditions such as water and oxygen, and chemical reactions occur. These factors will affect the stability of the detector.

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