Method for preparing Cu: ZnCdS/ZnS quantum dot luminescent material by one-pot method

A quantum dot luminescence and quantum dot technology, which is applied in the field of preparing Cu:ZnCdS/ZnS quantum dot luminescent materials, can solve problems such as affecting the fluorescence luminous efficiency, and achieve the effects of good repeatability, low cost and controllable quantum dot size.

Pending Publication Date: 2020-09-15
WUHAN UNIV OF TECH
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  • Application Information

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Problems solved by technology

However, the existing copper, manganese doped cadmium sulfide semiconductor quantum dots (Cu:CdS / Mn:CdS) and pure CdS / ZnS core-shell type quantum dots have defects on the surface and core-shell interface that are difficult to avoid, which greatly affects the Fluorescence Luminous Efficiency

Method used

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  • Method for preparing Cu: ZnCdS/ZnS quantum dot luminescent material by one-pot method
  • Method for preparing Cu: ZnCdS/ZnS quantum dot luminescent material by one-pot method
  • Method for preparing Cu: ZnCdS/ZnS quantum dot luminescent material by one-pot method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] (1) Preparation of Zn precursor solution

[0026] Weigh 0.4405g of zinc acetate dihydrate and add it to a three-necked flask, use a pipette to measure 1.6mL OAm (oleylamine) and 18.4mL ODE (octadecene) respectively and add them to the three-necked flask, heat and stir while first evacuating Then argon was circulated, and vacuum-passed argon three times to remove moisture and oxygen in the three-necked flask. Then the temperature was raised to 160°C until the solution turned into a light green transparent clear liquid, the argon gas valve was closed and the mixture was transferred to a glass sample bottle, and placed in a constant temperature drying oven at 50°C for later use.

[0027] (2) Preparation of Cd precursor solution

[0028] Weigh 0.5328g of cadmium acetate dihydrate and add it to a three-necked flask, and use a pipette gun to measure 4mL OA (oleic acid) and 16mL ODE respectively and add them to the three-necked flask. While heating, first vacuum and then argo...

Embodiment 2

[0039] This example is basically the same as Example 1, except that the amount of Cu precursor solution added in step (6) is 0.1 mL (0.001 mmol).

Embodiment 3

[0041] This example is basically the same as Example 1, except that the amount of Cu precursor solution added in step (6) is 0.4mL (0.004mmol).

[0042] The Cu:ZnCdS quantum dots prepared in Example 2-3 were similarly analyzed and tested, and compared with the results of Comparative Document 1, it was found that with the increase of the Cu / Zn molar ratio, the XRD diffraction peaks of the samples gradually shifted to the diffraction of ZnS peak, demonstrating that the interplanar spacing is about 0.32 nm at a Cu / Zn molar ratio of 1:100. It can be seen from the comprehensive TEM images that the interplanar spacing decreases and the crystal particle size decreases with the increase of doping concentration. Absorption and emission spectra demonstrate the integrity of the grain growth.

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Abstract

The invention relates to a method for preparing a Cu:ZnCdS / ZnS quantum dot luminescent material. The method comprises the following steps: preparing precursor solutions from a zinc source, a cadmium source, a copper source and a sulfur source and putting each precursor solution into the same reaction container, removing water and oxygen, heating to react to generate a quantum dot luminescent material with a cubic sphalerite structure, and finally mixing the quantum dot with the zinc precursor solutions to react, thereby obtaining the target quantum dot material with a core-shell structure. Bycontrolling the doping amount, the reaction time and the reaction temperature of copper, passivating the surfaces of the quantum dots and the like, controllable preparation of the quantum dots and adjustability of the light-emitting wavelength are realized. The method has the advantages of simple preparation process, low cost and the like, the preparation cost of the luminescent material is greatly reduced, and the prepared quantum dot is controllable in size and adjustable in luminescent wavelength, and has a relatively good application value in the fields of luminescent devices, solar cells,biomedicine and the like.

Description

technical field [0001] The invention relates to the technical field of semiconductor nanomaterials, in particular to a method for preparing Cu:ZnCdS / ZnS quantum dot luminescent materials by adopting a one-pot method. Background technique [0002] Typical semiconductor nanocrystals, that is, quantum dots, mainly include groups II-VI, III-VI and IV-VI. As a new generation of luminescent materials, quantum dots have high fluorescence quantum efficiency, stronger chemical stability and photooxidation resistance, and larger extinction coefficients. The luminescent range can be obtained by adjusting the size, so quantum dots are widely used in fields such as biomarkers, lighting and displays. [0003] The fluorescence of quantum dots is mainly produced by the radiative recombination of excitons, and the exciton recombination includes two processes: radiative recombination and non-radiative recombination (Auger recombination, phonon recombination). If the non-radiative recombinati...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/58C09K11/02B82Y20/00B82Y30/00
CPCC09K11/584C09K11/02B82Y20/00B82Y30/00
Inventor 夏冬林谭海桂
Owner WUHAN UNIV OF TECH
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