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SnOx/BiVO4 electrode, preparation method thereof and application of SnOx/BiVO4 electrode to photoelectrocatalytic hydrogen peroxide synthesis

An electrode, stannous chloride technology, applied in electrodes, electrolysis components, electrolysis processes, etc., can solve the problems of low hydrogen peroxide yield and low Faradaic efficiency, and achieve the effects of increasing production, improving effective separation, and inhibiting recombination

Active Publication Date: 2020-11-24
NANJING UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Yet this method needs to carry out under the condition of ice bath, Faraday efficiency is low about 40%, the productive rate of hydrogen peroxide is also low (KojiroFuku and Kazuhiro Sayama.Efficientoxidative hydrogen peroxide production and accumulation inphotoelectrochemical watersplitting using a tungsten trioxide / bismuthvanadatephotoanode[J] .Chem.Commun.,2016,52,5406)

Method used

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  • SnOx/BiVO4 electrode, preparation method thereof and application of SnOx/BiVO4 electrode to photoelectrocatalytic hydrogen peroxide synthesis
  • SnOx/BiVO4 electrode, preparation method thereof and application of SnOx/BiVO4 electrode to photoelectrocatalytic hydrogen peroxide synthesis
  • SnOx/BiVO4 electrode, preparation method thereof and application of SnOx/BiVO4 electrode to photoelectrocatalytic hydrogen peroxide synthesis

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Experimental program
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Effect test

Embodiment 1

[0029] Weigh 0.1932g of stannous chloride and dissolve it in a mixed solution of 10ml ethylene glycol methyl ether and 0.2ml acetylacetone, and ultrasonicate for 30min after dissolving. The solution was left to stand for 12 h after sonication. Spin-coat the standing solution at a speed of 500r.p.m for 5s first, then spin-coat at a speed of 2000r.p.m for 35s, and then spin-coat the bismuth vanadate surface step by step. The prepared sample is placed in a tube furnace and annealed under an argon atmosphere. The annealing temperature is 250°C, and the annealing time is 30 minutes. After natural cooling, the SnO can be obtained by taking it out. x / BiVO 4 electrode. In the photoelectrochemical test, the CHI660E electrochemical workstation was used, the Ag / AgCl electrode was used as the reference electrode, and the Pt was used as the counter electrode to prepare the SnO x / BiVO 4 The electrode is the working electrode, in 1M NaHCO 3 The photoelectrocatalytic synthesis of hydro...

Embodiment 2

[0035] Weigh 0.1932g of stannous chloride and dissolve it in a mixed solution of 10ml ethylene glycol methyl ether and 0.2ml acetylacetone, and ultrasonicate for 30min after dissolving. The solution was left to stand for 12 h after sonication. Spin-coat the standing solution at a speed of 500r.p.m for 5s first, then spin-coat at a speed of 2000r.p.m for 35s, and then spin-coat the bismuth vanadate surface step by step. The prepared sample is placed in a tube furnace and annealed under an argon atmosphere. The annealing temperature is 450°C, and the annealing time is 30 minutes. After natural cooling, the SnO can be obtained by taking it out. x / BiVO 4 catalyst of light. In the photoelectrochemical test, the CHI660E electrochemical workstation was used, the Ag / AgCl electrode was used as the reference electrode, and the Pt was used as the counter electrode to prepare the SnO x / BiVO 4 The electrode is the working electrode, in 1M NaHCO 3 The photoelectrocatalytic synthesis ...

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Abstract

The invention discloses an SnOx / BiVO4 electrode, a preparation method thereof and an application of the SnOx / BiVO4 electrode to photoelectrocatalytic hydrogen peroxide synthesis. The method comprisesthe following steps of dissolving stannous chloride in a mixed solution of ethylene glycol monomethyl ether and acetylacetone, performing ultrasonic treatment and standing, performing spin-coating onto the surface of a bismuth vanadate photoelectrode, and performing annealing in an argon atmosphere to form a tin oxide passivation layer on the surface so as to prepare the SnOx / BiVO4 electrode. According to the SnOx / BiVO4 electrode disclosed by the invention, the tin oxide film passivation layer is loaded on the surface of the bismuth vanadate, so that the photocorrosion of the bismuth vanadateon the surface can be reduced, the stability of the bismuth vanadate is improved, the separation efficiency of electron holes is improved, and the Faraday efficiency of synthesizing hydrogen peroxidethrough photoelectrocatalysis is as high as 90%.

Description

technical field [0001] The invention belongs to the technical field of photocatalytic materials and relates to a SnOx / BiVO 4 Electrode and its preparation method and application in photoelectrocatalytic hydrogen peroxide synthesis. Background technique [0002] Hydrogen peroxide, commonly known as hydrogen peroxide, is a widely used strong oxidizing agent. Its oxidizing property is second only to fluorine, ozone and hydroxyl radicals. It is widely used in papermaking, textile, wastewater treatment and other fields. In recent years, the conversion of clean energy to clean energy by using solar light energy to split water into hydrogen has been widely used. The voltage at which the photoelectrode splits water is lower than the theoretical voltage (<1.23V) required for water electrolysis. [0003] Bismuth vanadate (BiVO 4 ) because of its more suitable band gap (2.4eV), good stability, low cost, abundant resources, and the conduction band position is close to H 2 The adv...

Claims

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Application Information

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IPC IPC(8): C25B1/30C25B11/06
CPCC25B1/30Y02E60/36
Inventor 刘家利张侃邹友生缪佳明李晓璐毛君妍
Owner NANJING UNIV OF SCI & TECH
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