N-type copper-doped trimagnesium diantimonide alloy thermoelectric material and preparation method thereof

A thermoelectric material and copper doping technology, applied in the field of material science, can solve the problem of difficulty in individual regulation, and achieve the effect of improving thermoelectric performance, increasing electrical conductivity, and good thermoelectric performance

Inactive Publication Date: 2021-04-09
SHANGHAI UNIV
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  • Abstract
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  • Application Information

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Problems solved by technology

Its calculation formula is zT=S 2 σ / κ. It can be seen from the above formula that the thermoelectric figure of merit zT is mainly determined by three thermoelectric parameters: electrical conductivity σ, Seebeck coefficient S and total thermal conductivity κ. These three thermoelectric parameters are often coupled with each other and are difficult to control independently. , which has become a major problem restricting the development of thermoelectric materials

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  • N-type copper-doped trimagnesium diantimonide alloy thermoelectric material and preparation method thereof
  • N-type copper-doped trimagnesium diantimonide alloy thermoelectric material and preparation method thereof
  • N-type copper-doped trimagnesium diantimonide alloy thermoelectric material and preparation method thereof

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preparation example Construction

[0018] The invention provides an N-type copper-doped trismonide trimagnesium alloy thermoelectric material, and the general chemical formula of the thermoelectric material is: Mg 3.4 Sb 1.5 Bi 0.49 Te 0.01 +xCu, where x is the actual composition of the doping element Cu, and the range is 0.001≤x≤0.006. The present invention also provides a method for preparing an N-type copper-doped antimony trimagnesium alloy thermoelectric material, comprising the following steps:

[0019] a. In the inert atmosphere glove box, the Mg element, Sb element, Bi element, Te element element, and Cu element element will be weighed according to the stoichiometric ratio;

[0020] b. The reaction starter is put into a ball mill jar, and ball milled in a ball mill;

[0021] c. Taking out the product obtained in step b and performing plasma sintering to obtain an N-type copper-doped trimagnesium dismonide alloy thermoelectric material.

[0022] Wherein optionally, the ball milling speed in step b i...

Embodiment example 1

[0025] In this embodiment, an N-type antimony trimagnesium alloy thermoelectric material, its chemical formula is Mg 3.4 Sb 1.5 Bi 0.49 Te 0.01 .

[0026] The N-type diantimonide trimagnesium alloy thermoelectric material Mg used in this embodiment 3.4 Sb 1.5 Bi 0.49 Te 0.01 The preparation method comprises the following steps:

[0027] a. Preparation for ball milling of chemical elemental raw materials:

[0028] In a glove box filled with argon, weigh powdery elemental Mg (99.9%), powdery elemental Bi (99.99%), powdery elemental Sb (99.999%), and granular elemental Te (99.99%), according to 3.4: The molar ratio of 0.49:1.5:0.01 is put into the ball mill jar and sealed in the glove box;

[0029] b. Ball milling preparation process:

[0030] Put the ball mill jar into the ball mill and mill it at a speed of 550r / min for 72h, take out the reaction product in a glove box filled with argon, and grind it with a mortar;

[0031] c. Spark plasma sintering;

[0032] Place ...

Embodiment example 2

[0034] This experimental case is basically the same as the implementation case 1, and its special features are:

[0035] In this embodiment, the chemical formula of the N-type copper-doped trismonide trimagnesium alloy thermoelectric material is Mg 3.4 Sb 1.5 Bi 0.49 Te 0.01 +0.001Cu.

[0036] A kind of present embodiment N-type copper-doped antimonide trimagnesium alloy thermoelectric material Mg 3.4 Sb 1.5 Bi 0.49 Te 0.01 The preparation method of +0.001Cu comprises the following steps:

[0037] a. Preparation for ball milling of chemical elemental raw materials:

[0038] According to the chemical formula Mg of the prepared target thermoelectric material 3.4 Sb 1.5 Bi 0.49 Te 0.01 +0.001Cu, add and weigh powdery elemental Mg (99.9%), powdery elemental Bi (99.99%), powdery elemental Sb (99.999%), granular elemental Te (99.99%), according to 3.4:0.49:1.5: With a molar ratio of 0.01, the powdered elemental Cu (99.99%) with a mass percentage of 0.001 was weighed and...

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Abstract

The invention relates to the field of material science, and provides an N-type copper-doped trimagnesium diantimonide alloy thermoelectric material and a preparation method thereof. The chemical general formula of the N-type copper-doped trimagnesium diantimonide alloy thermoelectric material is Mg<3.4>Sb<1.5>Bi<0.49>Te<0.01>+xCu, x is an actual component of a doped element Cu, and x is greater than or equal to 0.001 and less than or equal to 0.006. According to the preparation method, an inert atmosphere ball milling method is adopted for preparing a powder sample, a discharge plasma sintering method is adopted for preparing a block sample, electrons are introduced through Cu doping, cooperative regulation and control over the electrical conductivity and the thermal conductivity are achieved, and the highest thermoelectric optimal zT of the prepared N-type copper-doped trimagnesium diantimonide alloy reaches 1.62. The method provided by the invention is simple to operate, can be suitable for other thermoelectric materials, and provides a new scheme for improving the thermoelectric figure of merit.

Description

technical field [0001] The present application relates to the field of material science, in particular to an N-type copper-doped antimony trimagnesium alloy thermoelectric material and a preparation method thereof. Background technique [0002] Thermoelectric materials are functional materials that can directly realize heat-electric conversion, and have the advantages of no pollution, small size, light weight, and no noise. Thermoelectric materials can recycle the waste heat generated by the combustion of fossil energy to generate electricity, thereby improving the utilization rate of fossil energy and playing an important role in solving the energy crisis. For example, Zintl-phase compounds have been widely studied by scientists due to their conformity to the concept of "phonon glass-electron crystal" (PGEC) [1] . Some Zintl phase compounds are known p-type semiconducting materials with high thermoelectric properties, Te-doped Mg was recently discovered 3 Sb 2 The base ...

Claims

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Application Information

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IPC IPC(8): C01B19/00H01L35/16H01L35/34
CPCC01B19/007C01P2002/72H10N10/852H10N10/01
Inventor 郭凯隋超杨昕昕李洋
Owner SHANGHAI UNIV
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